Listed by the USPTO as BAUMAN, SCOTT E
Tech Center 2800 • Art Units: 2815
This examiner grants 47% of resolved cases
Scott E Bauman works in tech center 2800 and art unit 2815. His record includes 189 resolved cases, an allowance rate of 47.1%, and a median of 1306 days to allowance. The interview lift of 27.1% indicates that interviews are associated with improved allowance outcomes, despite the lower allowance rate in the available record.
The leading companies are Samsung Electronics Co., Ltd., SK hynix Inc., and Taiwan Semiconductor Manufacturing Company, Ltd. The leading firms are IP & T GROUP LLP, Muir Patent Law, PLLC, and BIRCH STEWART KOLASCH & BIRCH, LLP. Practitioners may need a deliberate approach to claim amendments and examiner discussions. The case history is useful but smaller than a high-volume record, and the median timing supports early management of prosecution risk.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18133964 | SEMICONDUCTOR DEVICE | Final Rejection | Samsung Electronics Co., Ltd. |
| 17936552 | SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 17931880 | SEMICONDUCTOR DEVICES | Final Rejection | Samsung Electronics Co., Ltd. |
| 17861479 | SEMICONDUCTOR MEMORY DEVICE INCLUDING A BIT-CONTACT AND A CONTACT OHMIC LAYER THEREUNDER | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 17964900 | OLED PANEL FOR LIGHTING DEVICE WITH MOISTURE INTRUSION DELAY EFFECT | Final Rejection | LG Display Co., Ltd. |
| 18230565 | DISPLAY APPARATUS | Final Rejection | SAMSUNG DISPLAY CO., LTD. |
| 15913621 | ELECTRONIC CIRCUIT WITH GUARD FEATURES FOR RELIABILITY IN HUMID ENVIRONMENTS | Final Rejection | Texas Instruments Incorporated |
| 18350747 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | SK hynix Inc. |
| 18194654 | SEMICONDUCTOR DEVICE HAVING STORAGE NODE CONTACT PLUGS AND METHOD FOR FABRICATING THE SAME | Final Rejection | SK hynix Inc. |
| 17891026 | METHOD OF FORMING A SELECTOR PATTERN BY ION IMPLANTATION INTO AN OXIDIZED SILICON-CONTAINING LAYER | Final Rejection | SK hynix Inc. |
| 17854456 | CO-DOPING TO CONTROL WET ETCH RATE OF FCVD OXIDE LAYERS | Non-Final OA | Applied Materials, Inc. |
| 18583209 | SEMICONDUCTOR DEVICE AND METHODS OF FORMATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17584716 | MEMORY DEVICE WITH DUAL CHANNEL TRANSISTOR | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18232719 | METHOD OF FORMING BIOLOGICAL FIELD EFFECT TRANSISTORS INTEGRATED WITH HEATERS | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18364614 | METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARIZATION | Final Rejection | Taiwan Semiconductor Manufacturing Co., Ltd. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy47.1% of resolved applications examined by Scott E Bauman were allowed (189 resolved cases), compared with 61.3% across Art Unit 2815 over the last five years.
This examiner's interview lift is +27.1 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Scott E Bauman took 1,306 days on average from filing to allowance.
Scott E Bauman examines applications in Art Unit 2815 in Tech Center 2800 (Semiconductors, Circuits & Optics).
