Listed by the USPTO as CARTER, JONATHAN LANGDON
Tech Center 3700 • Art Units: 1712 1713 1716 1794 2828 2896 3799
This examiner grants 100% of resolved cases
CARTER, JONATHAN LANGDON is a USPTO patent examiner in tech center 3700 and art unit 1712. The record contains 5 resolved cases, with an allowance rate of 100.0% and a median of 894 days to allowance. The interview lift is 0.0%, so the available cases do not show an additional allowance association for interviews.
Company matters include Tokyo Electron Limited, Mitsubishi Chemical Corporation, and Fujimi Incorporated. The listed firms are OBLON, MCCLELLAND, MAIER & NEUSTADT, L.L.P., KATTEN MUCHIN ROSENMAN LLP, and OLIFF PLC. Because the resolved-case record is limited, practitioners should avoid broad predictions and focus on the specific application and art presented.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18770345 | CHEMICAL LIFT OFF DEVICE AND METHOD THEREOF | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18739193 | DEPOSITION MASK AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18632562 | PROCESS FOR MANUFACTURING A THREE-DIMENSIONAL STRUCTURE IN BENDING | Non-Final OA | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 18725503 | HIGH SELECTIVITY AND UNIFORM DIELECTRIC ETCH | Non-Final OA | Lam Research Corporation |
| 18949622 | METHOD AND SYSTEM FOR FORMING A HARD MASK FILM WITH A TUNABLE FILM STRESS | Non-Final OA | TOKYO ELECTRON LIMITED |
| 18788530 | COPPER-LAYER ETCHING METHOD AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18734683 | METHOD FOR ETCHING A METAL HARD MASK | Non-Final OA | Tokyo Electron Limited |
| 18949532 | Patterning Process | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18676429 | SENSORS AND SYSTEM FOR IN-SITU EDGE RING EROSION MONITOR | Non-Final OA | Applied Materials, Inc. |
| 18671417 | CRYOGENIC ETCHING OF SILICON-CONTAINING MATERIALS | Non-Final OA | Applied Materials, Inc. |
| 18593014 | SELECTIVE ETCHING OF ALTERNATING LAYERS OF SILICON OXIDE AND SILICON NITRIDE FOR HIGH ASPECT RATIO CONTACTS | Non-Final OA | Applied Materials, Inc. |
| 18160700 | Surface Treatment Of Quantum Dots | Non-Final OA | The Trustees of Columbia University in the city of New York |
| 18696798 | POLISHING COMPOSITION | Final Rejection | FUJIMI INCORPORATED |
| 18618047 | POLISHING COMPOSITION, METHOD FOR PRODUCING SAME, AND POLISHING METHOD | Non-Final OA | FUJIMI INCORPORATED |
| 18693607 | ADDITIVE FOR CHEMICAL MECHANICAL POLISHING, METHOD FOR PRODUCING THE SAME, AND POLISHING LIQUID COMPOSITION | Final Rejection | TOAGOSEI CO., LTD. |
| 18538919 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT SYSTEM | Non-Final OA | SEMES CO., LTD. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy100.0% of resolved applications examined by Jonathan Langdon Carter were allowed (5 resolved cases), compared with 43.3% across Art Unit 1712 over the last five years.
This examiner's interview lift is +0.0 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Jonathan Langdon Carter took 894 days on average from filing to allowance.
Jonathan Langdon Carter examines applications in Art Unit 1712 in Tech Center 3700 (Medical Devices & Mechanical Engineering).
