Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1737 2818
This examiner grants 52% of resolved cases
Jayson D. Cosgrove has resolved 129 cases in Art Unit 1737 of Tech Center 2800. The examiner has an allowance rate of 51.9 percent and a median days to allowance of 1393. These figures suggest the prosecution process for applications in this unit. The 129 resolved cases provide the current data for this examiner.
The interview lift is 34.6 percent, indicating that direct communication is a tool for this examiner. For the 129 resolved cases, the 51.9 percent allowance rate can be changed by engaging in an interview. Practitioners should consider the 1393 median days to allowance when setting expectations for the total time to grant. The 34.6 percent lift and the 51.9 percent allowance rate are the key metrics for Art Unit 1737. These data points offer a view of the examination process for this examiner.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18403030 | TOP MODULE AND EXPOSING APPARATUS INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18543114 | PHOTORESIST COMPOSITION | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 17144259 | CHEMICAL LIQUID, KIT, PATTERN FORMING METHOD, CHEMICAL LIQUID MANUFACTURING METHOD, AND CHEMICAL LIQUID STORAGE BODY | Non-Final OA | FUJIFILM Corporation |
| 18348313 | METHOD OF MANUFACTURING PATTERNED BASE MEMBER, PROCESSING METHOD, AND METHOD OF MANUFACTURING LASER ELEMENT | Final Rejection | NICHIA CORPORATION |
| 18145038 | PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOTORESIST | Final Rejection | Intel Corporation |
| 18624406 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | Non-Final OA | SAMSUNG SDI CO., LTD. |
| 18588606 | HARDMASK COMPOSITION, HARDMASK LAYER, AND METHOD OF FORMING PATTERNS | Non-Final OA | SAMSUNG SDI CO., LTD. |
| 18110838 | METHOD OF MANUFACTURING PHOTO MASKS | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18277648 | SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | HOYA CORPORATION |
| 18266057 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | HOYA CORPORATION |
| 18039192 | MULTILAYER REFLECTIVE FILM-EQUIPPED SUBSTRATE, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | Final Rejection | HOYA CORPORATION |
| 18025461 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | HOYA CORPORATION |
| 18022476 | APPARATUS AND METHOD FOR PROCESSING A RETICLE AND PELLICLE ASSEMBLY | Final Rejection | ASML NETHERLANDS B.V. |
| 18426723 | SULFONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 18544335 | Polymer For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18038574 | PHOTOSENSITIVE POLYIMIDE RESIN COMPOSITION, RESIN FILM, AND ELECTRONIC DEVICE | Non-Final OA | MITSUBISHI GAS CHEMICAL COMPANY, INC. |
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