Listed by the USPTO as CROWELL, ANNA M
Tech Center 3700 • Art Units: 1712 1713 1716 1792 3722
This examiner grants 44% of resolved cases
Anna M. Crowell, an examiner in Tech Center 3700 and Art Unit 1712, has 440 resolved cases. Her allowance rate is 44.5%, and the median days to allowance is 1403. These metrics suggest a challenging environment with a pendency of nearly four years.
The interview lift is high at 30.6%, indicating that direct communication is a very effective tool for improving the 44.5% allowance rate. This is a valuable tactic for major applicants like Tokyo Electron Limited, Samsung Electronics Co., Ltd., and ASM IP Holding B.V.
Firms such as HARNESS, DICKEY & PIERCE, P.L.C., Muir Patent Law, PLLC, and Studebaker Brackett PLLC are frequent representatives. The 44.5% allowance rate across 440 resolved cases is the baseline for success. The 1403-day median pendency and 30.6% interview lift provide additional strategic depth for practitioners.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18587026 | ION BEAM ETCHING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD FOR TREATING SUBSTRATE USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18453679 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18235603 | SUBSTRATE SUPPORTING APPARATUS | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18133277 | PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18792992 | APPARATUS FOR PLASMA PROCESSING AND METHOD OF ETCHING | Non-Final OA | Tokyo Electron Limited |
| 18789854 | HYDROPHOBIZATION TREATMENT APPARATUS, HYDROPHOBIZATION TREATMENT METHOD, AND COMPUTER STORAGE MEDIUM | Final Rejection | Tokyo Electron Limited |
| 18240010 | PLASMA PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18360384 | SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18101676 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | Final Rejection | Tokyo Electron Limited |
| 18088870 | PLASMA PROCESSING APPARATUS AND ELECTROSTATIC CHUCK MANUFACTURING METHOD | Final Rejection | Tokyo Electron Limited |
| 17894296 | ELECTROSTATIC CHUCK, SUBSTRATE SUPPORT, PLASMA PROCESSING APPARATUS, AND METHOD OF MANUFACTURING ELECTROSTATIC CHUCK | Final Rejection | Tokyo Electron Limited |
| 16134200 | SYSTEMS AND PROCESSES FOR PLASMA TUNING | Final Rejection | Applied Materials, Inc. |
| 18785878 | CANTILEVER WITH ETCH CHAMBER FLOW DESIGN | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy44.5% of resolved applications examined by Anna M Crowell were allowed (440 resolved cases), compared with 43.3% across Art Unit 1712 over the last five years.
This examiner's interview lift is +30.6 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Anna M Crowell took 1,403 days on average from filing to allowance.
Anna M Crowell examines applications in Art Unit 1712 in Tech Center 3700 (Medical Devices & Mechanical Engineering).
