Listed by the USPTO as KENDALL, BENJAMIN R
Tech Center 2800 • Art Units: 1714 1716 1718 2837 2896
This examiner grants 34% of resolved cases
KENDALL, BENJAMIN R is a USPTO patent examiner in tech center 2800 and art unit 1714. The profile covers 490 resolved cases, with an allowance rate of 33.5% and a median of 1435 days to allowance. Interview lift is 21.8%, making direct discussion a relevant option while the allowance and timing figures call for careful preparation of claim amendments and arguments.
Tokyo Electron Limited, Samsung Electronics Co., Ltd., and ASM IP Holding B.V. are the leading companies. The leading firms are Snell & Wilmer (ASM IP Holding B.V.), Xsensus, and IPUSA, P.L.L.C. Practitioners should use interviews to isolate the examiner's concerns, follow with a precise written record, and plan for a prosecution path that may require sustained attention before allowance.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18545919 | SUBSTRATE PROCESSING APPARATUS | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18235653 | SUBSTRATE PROCESSING APPARATUS | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18447479 | SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18239176 | SYSTEM AND APPARATUS FOR A REACTION CHAMBER | Non-Final OA | ASM IP Holding B.V. |
| 18129932 | GAS-DELIVERY ASSEMBLY AND REACTOR SYSTEM INCLUDING SAME | Non-Final OA | ASM IP Holding B.V. |
| 17897461 | SUBSTRATE PROCESSING APPARATUS INCLUDING IMPEDANCE ADJUSTER | Non-Final OA | ASM IP Holding B.V. |
| 18010423 | OPTIMIZING EDGE RADICAL FLUX IN A DOWNSTREAM PLASMA CHAMBER | Non-Final OA | LAM RESEARCH CORPORATION |
| 18578100 | Equipment For Manufacturing Light-Emitting Device | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18454234 | PIPING, SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Kioxia Corporation |
| 19023579 | PLACING TABLE AND SUBSTRATE PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18581954 | SUBSTRATE PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18524015 | SUBSTRATE PROCESSING APPARATUS, PLASMA MEASUREMENT METHOD, AND PLASMA REGULATION METHOD | Non-Final OA | Tokyo Electron Limited |
| 18380776 | SYSTEMS AND METHODS FOR IMPROVING PLANARITY USING SELECTIVE ATOMIC LAYER ETCHING (ALE) | Non-Final OA | Tokyo Electron Limited |
| 18237409 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18359783 | APPARATUS AND METHOD FOR PLASMA PROCESSING | Non-Final OA | Tokyo Electron Limited |
| 17747861 | PLASMA PROCESSING APPARATUS | Non-Final OA | TOKYO ELECTRON LIMITED |
| 18366433 | CHAMBER COMPONENT FOR IMPROVED CLEANING EFFICIENCY | Non-Final OA | Applied Materials, Inc. |
| 18206852 | ICP SOURCE GAS DELIVERY HUB AND NOZZLE | Non-Final OA | Applied Materials, Inc. |
| 17961553 | HALOGEN-RESISTANT THERMAL BARRIER COATING FOR PROCESSING CHAMBERS | Non-Final OA | Applied Materials, Inc. |
| 18407368 | PLASMA ETCHER WITH EDGE RING AND METHOD OF PROCESSING SEMICONDUCTOR DEVICE USING THE SAME | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy33.5% of resolved applications examined by Benjamin R Kendall were allowed (490 resolved cases), compared with 50.6% across Art Unit 1714 over the last five years.
This examiner's interview lift is +21.8 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Benjamin R Kendall took 1,435 days on average from filing to allowance.
Benjamin R Kendall examines applications in Art Unit 1714 in Tech Center 2800 (Semiconductors, Circuits & Optics).
