Listed by the USPTO as MALLOY, ANNA E
Tech Center 1700 • Art Units: 1713 1722 1737
This examiner grants 47% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18426343 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | Non-Final OA | FUJIFILM Corporation |
| 18446045 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, POSITIVE TONE PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | Final Rejection | FUJIFILM Corporation |
| 18344992 | PHOTORESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | Final Rejection | Samsung Electronics Co., Ltd. |
| 17847794 | METHOD FOR FORMING PHOTORESIST PATTERNS | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 17749899 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18022762 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME | Non-Final OA | Merck Patent GmbH |
| 17612058 | A NEGATIVE TONE LIFT OFF RESIST COMPOSITION COMPRISING AN ALKALI SOLUBLE RESIN AND A PHOTO ACID GENERATOR, AND A METHOD FOR MANUFACTURING METAL FILM PATTERNS ON A SUBSTRATE. | Final Rejection | Merck Patent GmbH |
| 17908255 | OXIME ESTER PHOTOINITIATORS | Non-Final OA | BASF SE |
| 18583033 | HARDMASK COMPOSITION, HARDMASK LAYER, AND METHOD OF FORMING PATTERNS | Non-Final OA | SAMSUNG SDI CO., LTD. |
| 18570518 | COMPOSITION FOR REMOVING EDGE BEAD OF METAL-CONTAINING RESIST AND METHOD FOR FORMING PATTERN COMPRISING STEP OF REMOVING EDGE BEAD BY USING SAME | Non-Final OA | SAMSUNG SDI CO., LTD. |
| 18545034 | PELLICLE MEMBRANE, PELLICLE ASSEMBLY INCLUDING THE SAME AND METHOD OF MANUFACTURING THE PELLICLE ASSEMBLY | Non-Final OA | SK hynix Inc. |
| 18349633 | Resist Material And Patterning Process | Final Rejection | SHIN-ETSU CHEMICAL CO., LTD. |
| 18142910 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Final Rejection | Shin-Etsu Chemical Co., Ltd. |
| 18180946 | RESIST MATERIAL AND PATTERNING PROCESS | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18008776 | NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 17543855 | POLYIMIDE RESIN, POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, INSULATING FILM AND SEMICONDUCTOR DEVICE | Non-Final OA | LG CHEM, LTD. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy46.7% of resolved applications examined by Anna E Malloy were allowed (507 resolved cases), compared with 62.4% across Art Unit 1713 over the last five years.
This examiner's interview lift is -4.0 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Anna E Malloy took 1,257 days on average from filing to allowance.
Anna E Malloy examines applications in Art Unit 1713 in Tech Center 1700 (Chemistry & Materials).
