Prosecution Insights
Prosecution Insights
Tech Center 4100 • Art Units: 1718 1779 1784 2875 2898 4100
This examiner grants 30% of resolved cases
Christina D Mcclure is an examiner in Tech Center 4100 and Art Unit 1718. She has 387 resolved cases and an allowance rate of 30.0 percent. This rate indicates a challenging prosecution environment where only a minority of applications reach a grant. The median days to allowance is 1235, which is a relatively long pendency period for successful cases.
The interview lift is 32.6 percent. This high lift indicates that interviews are a very effective tool for moving cases toward allowance compared to the 30.0 percent baseline. For practitioners, the 32.6 percent lift suggests that direct communication is a vital strategy for overcoming rejections with this examiner. Given the 1235 days to allowance, an early interview could be a key factor in improving the odds of success and navigating the difficulties reflected in the low baseline allowance rate.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19283552 | METHOD OF FORMING LOW-K MATERIAL LAYER, STRUCTURE INCLUDING THE LAYER, AND SYSTEM FOR FORMING SAME | Non-Final OA | ASM IP Holding B.V. |
| 19175324 | METHOD OF FORMING A STRUCTURE INCLUDING CARBON MATERIAL, STRUCTURE FORMED USING THE METHOD, AND SYSTEM FOR FORMING THE STRUCTURE | Non-Final OA | ASM IP Holding B.V. |
| 18930631 | METHOD FOR FORMING A RARE-EARTH-CONTAINING LAYER, APPARATUS, AND STRUCTURE | Final Rejection | ASM IP Holding B.V. |
| 18642877 | SYSTEMS AND METHODS FOR DEPOSITING MATERIAL LAYERS ONTO SUBSTRATES | Non-Final OA | ASM IP Holding B.V. |
| 18598145 | METHOD OF FORMING DIELECTRIC MATERIAL LAYER USING PLASMA | Non-Final OA | ASM IP Holding B.V. |
| 17990776 | METHOD OF FORMING SIOC AND SIOCN LOW-K SPACERS | Final Rejection | ASM IP Holding B.V. |
| 18847683 | REDUCING CAPACITANCE IN SEMICONDUCTOR DEVICES | Final Rejection | Lam Research Corporation |
| 18947949 | Selective metal Capping with Metal Halide enhancement | Non-Final OA | Applied Materials, Inc. |
| 18758099 | METHODS FOR SELECTIVE DEPOSITION USING SELF-ASSEMBLED MONOLAYERS | Non-Final OA | Applied Materials, Inc. |
| 17950946 | PLASMA-ENHANCED MOLYBDENUM DEPOSITION | Final Rejection | Applied Materials, Inc. |
| 17748329 | METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE | Final Rejection | Applied Materials, Inc. |
| 18923883 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18838595 | SUBTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Final Rejection | TOKYO ELECTRON LIMITED |
| 18589570 | BOTTOM-UP DIRECTIONAL ATOMIC LAYER DEPOSITION (ALD) | Non-Final OA | Tokyo Electron Limited |
| 18522053 | DEFECT-RICH MOS2 MONOLAYER, METHODS FOR PRODUCING THE SAME AND USES THEREOF | Non-Final OA | CITY UNIVERSITY OF HONG KONG |
| 18905713 | Substrate Processing Method, Method of Manufacturing Semiconductor Device, Non-transitory Computer-readable Recording Medium and Substrate Processing Apparatus | Final Rejection | Kokusai Electric Corporation |
| 18732442 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 18609345 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | Kokusai Electric Corporation |
| 18609326 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | Kokusai Electric Corporation |
| 18608204 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 18096668 | ELECTRON-ENHANCED ATOMIC LAYER DEPOSITION (EE-ALD) METHODS AND DEVICES PREPARED BY SAME | Non-Final OA | THE REGENTS OF THE UNIVERSITY OF COLORADO, A BODY CORPORATE |
| 17917948 | METHOD FOR INDUCING CONDUCTIVITY AT AND NEAR OXIDE INTERFACES | Final Rejection | Technion Research & Development Foundation Limited |
| 18403858 | METHOD FOR SELECTIVE DEPOSITION ON DIELECTRIC MATERIALS | Non-Final OA | ENTEGRIS, INC. |
| 17642185 | MONOALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | Final Rejection | VERSUM MATERIALS US, LLC |
| 17714138 | AUDIO DEVICE, ELECTRONIC CIRCUIT, AND RELATED METHODS OF MANUFATURING | Non-Final OA | GN Hearing A/S |
| 19216004 | METAL-FLUORIDE THIN FILMS AND DEPOSITION METHODS | Non-Final OA | LOTUS APPLIED TECHNOLOGY, LLC |
| 17833841 | INORGANIC POROUS COATINGS AND METHODS OF MAKING THE SAME | Final Rejection | THE UNIVERSITY OF CHICAGO |
| 18438175 | ATOMIC LAYER DEPOSITION OF GROUP FIFTEEN MATERIALS | Final Rejection | Wayne State University |
| 18713371 | DEPOSITION OF ULTRA-THIN FUNCTIONAL COATINGS ON FLEXIBLE MATERIALS | Non-Final OA | NFINITE NANOTECHNOLOGY INC. |
| 14865038 | Multi-Phase Pre-Reacted Thermal Barrier Coatings and Process Therefor | Final Rejection | UNITED TECHNOLOGIES CORPORATION |
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