Listed by the USPTO as TRAN, BINH X
Tech Center 2800 • Art Units: 1713 1716 1765 1781 1792 2813
This examiner grants 82% of resolved cases
TRAN, BINH X is assigned to tech center 2800 and art unit 1713. The record contains 936 resolved cases, an 81.7% allowance rate, and an 11.9% interview lift. The median time to allowance is 1024 days. The metrics support a high observed allowance outcome and a positive interview association within a substantial prosecution record.
The main companies are Tokyo Electron Limited, Applied Materials Inc., and Taiwan Semiconductor Manufacturing Company, Ltd. The leading firms are JCIPRNET, CKC & Partners Co., LLC, and Conley Rose, P.C. Practitioners handling semiconductor manufacturing matters can use these recurring participants to inform claim drafting, response planning, and interview preparation.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19058795 | CHEMICAL LIQUID AND TREATMENT METHOD | Non-Final OA | FUJIFILM CORPORATION |
| 18603578 | TREATMENT LIQUID FOR MANUFACTURING SEMICONDUCTOR AND METHOD OF TREATING OBJECT TO BE TREATED | Non-Final OA | FUJIFILM Corporation |
| 18627835 | PRODUCING GRATINGS IN OPTICAL SUBSTRATES USING NEUTRALIZED ION BEAM ETCHING | Non-Final OA | GOOGLE LLC |
| 18846229 | FAST ATOMIC LAYER ETCH | Non-Final OA | Lam Research Corporation |
| 18688739 | ATOMIC LAYER ETCHING USING BORON TRICHLORIDE | Final Rejection | Lam Research Corporation |
| 18727238 | LASER MICROMACHINING OF MEMS RESONATORS FROM BULK OPTICALLY TRANSPARENT MATERIAL | Non-Final OA | The Regents of the University of California |
| 18620111 | SELECTIVE ETCHING OF SILICON ADJACENT TO SILICON-GERMANIUM | Non-Final OA | Tokyo Electron Limited |
| 18439469 | IN-SITU METAL DEPOSITION FOR REDUCED CHARGING DURING DIELECTRIC ETCH | Final Rejection | Tokyo Electron Limited |
| 18482401 | SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18368110 | ETCHING METHOD AND ETCHING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18814133 | SUBSTRATE PROCESSING INCLUDING INITIAL ETCHING AND FAST ETCHING, AND RELATED METHODS, APPARATUS, SYSTEMS, AND CHAMBERS | Non-Final OA | Applied Materials, Inc. |
| 18805790 | SELECTIVE ETCHING OF SILICON-CONTAINING MATERIAL | Non-Final OA | Applied Materials, Inc. |
| 18603360 | SELECTIVE OXIDATION PROCESSES FOR GATE-ALL-AROUND TRANSISTORS | Final Rejection | Applied Materials, Inc. |
| 18974840 | SEMICONDUCTOR MANUFACTURING METHOD | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
| 18973300 | Photoresist and Method | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18607490 | Plasma Etched Compound Semiconductor | Final Rejection | SPTS Technologies Limited |
| 18931148 | Etching Compositions | Non-Final OA | Fujifilm Electronic Materials U.S.A., Inc. |
| 18697669 | PATTERNING METHODS FOR PHOTONIC DEVICES | Final Rejection | PSIQUANTUM CORP. |
| 18957603 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | SCREEN Holdings Co., Ltd. |
| 18596278 | POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE | Final Rejection | FUJIMI INCORPORATED |
| 18684991 | POLISHING COMPOSITION, POLISHING COMPOSITION PRODUCTION METHOD, POLISHING METHOD, AND SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD | Final Rejection | FUJIMI INCORPORATED |
| 18870440 | COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD | Non-Final OA | JSR CORPORATION |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy81.7% of resolved applications examined by Binh X Tran were allowed (936 resolved cases), compared with 62.4% across Art Unit 1713 over the last five years.
This examiner's interview lift is +11.9 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Binh X Tran took 1,024 days on average from filing to allowance.
Binh X Tran examines applications in Art Unit 1713 in Tech Center 2800 (Semiconductors, Circuits & Optics).
