Technology areas: Chemistry & Materials • Semiconductors, Circuits & Optics
4 pending office actions • 3 art units • 4 examiners • 0 of 4 (0%) have an AI response strategy ready • 6 patents granted in the last 365 days
Sicrystal GmbH is currently managing 4 pending office actions within the Chemistry & Materials technology area. These actions are distributed among 4 distinct examiners, meaning the number of examiners is equal to the number of pending actions. The workload is spread across 3 distinct art units, which is a smaller count than the 4 distinct examiners involved.
The busiest examiner, SONG, MATTHEW J, is responsible for 1 busiest examiner pending action. This 1 busiest examiner pending action is a fraction of the 4 pending office actions in the total portfolio. Because the 4 pending office actions are split among 4 distinct examiners, no single examiner manages more than one action. The 3 distinct art units suggest that the 4 pending office actions cover several technical sub-sectors within Chemistry & Materials. Practitioners should prepare for 4 separate review processes, as the 4 distinct examiners will each provide independent feedback. The 1 busiest examiner pending action assigned to SONG, MATTHEW J is consistent with the one-to-one ratio of examiners to actions seen across the rest of the portfolio.
Based on the USPTO statutory response window for each pending office action. 1 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 1 (25%) |
| §112 only | 1 (25%) |
| Multi-statute (no §101) | 2 (50%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| SONG, MATTHEW J | 1 | 60.4% | +13.9% |
| WINTERS, SEAN AYERS | 1 | 88.2% | +19.3% |
| BRATLAND JR, KENNETH A | 1 | 56.1% | +16.3% |
| MOUDOU, EILEEN QI-YUN | 1 | 66.7% | +0.0% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 1 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18595130 | Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor Material | WINTERS, SEAN AYERS | — |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 2 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18598090 | METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE SIC VOLUME MONOCRYSTAL | SONG, MATTHEW J | — |
| 18466184 | PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE | MOUDOU, EILEEN QI-YUN | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 3 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18581200 | Sublimation System And Method Of Growing At Least One Single Crystal | BRATLAND JR, KENNETH A | 39d |
| 18598090 | METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE SIC VOLUME MONOCRYSTAL | SONG, MATTHEW J | — |
| 18595130 | Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor Material | WINTERS, SEAN AYERS | — |
| Art Unit | Apps |
|---|---|
| 2892 | 1 |
| 1714 | 1 |
| 1738 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18598090 | METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE SIC VOLUME MONOCRYSTAL | SONG, MATTHEW J | — | §102§103 | Non-Final OA | — | Pending | Mar 07, 2024 |
| 18595130 | Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor Material | WINTERS, SEAN AYERS | 2892 | §103 | Final Rejection | — | Pending | Mar 04, 2024 |
| 18581200 | Sublimation System And Method Of Growing At Least One Single Crystal | BRATLAND JR, KENNETH A | 1714 | §112 | Non-Final OA | 39d | Pending | Feb 19, 2024 |
| 18466184 | PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE | MOUDOU, EILEEN QI-YUN | 1738 | §102§103 | Final Rejection | — | Pending | Sep 13, 2023 |
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