Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1714 1734 2811 2812 2837
This examiner grants 56% of resolved cases
Kenneth A. Bratland Jr serves in Tech Center 2800 and Art Unit 1714. The examiner has a record of 886 resolved cases. These cases result in an allowance rate of 56.1%, which indicates the frequency of grants for applications reaching a final disposition. The median days to allowance is 1162, providing a benchmark for the expected duration of the prosecution cycle. Practitioners can use the 56.1% allowance rate to assess the likelihood of a successful outcome when an application is assigned to this examiner.
The data shows an interview lift of 16.3%. This lift suggests that interviews are an effective tool for communication, potentially improving the 56.1% allowance rate. The 1162-day median to allowance reflects the pace of the examination process in Art Unit 1714. Practitioners should consider these metrics when advising clients on the timeline and probability of grant. The consistency seen across 886 resolved cases offers a predictable environment for patent prosecution.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18669579 | MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR GROUP III NITRIDE CRYSTAL | Non-Final OA | Panasonic Holdings Corporation |
| 18633576 | DEVICE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL | Final Rejection | Panasonic Holdings Corporation |
| 18061774 | METHOD FOR FORMING A LAYER WITH THE BASIC OF A PIEZOELECRIC MATERIAL AND SURFACE ACOUSTIC WAVE DEVICE USING SUCH A LAYER | Final Rejection | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 18742250 | METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRECURSORS | Non-Final OA | ASM IP Holding B.V. |
| 18540230 | METHODS FOR FORMING SEMICONDUCTOR STACKED STRUCTURES ON A SUBSTRATE AND RELATED SEMICONDUCTOR STRUCTURES | Non-Final OA | ASM IP Holding B.V. |
| 18190696 | PYROMETER CONTROLLED MULTI-WAFER CLEANING PROCESS | Non-Final OA | ASM IP Holding, B.V. |
| 18086734 | EPITAXIAL REACTOR SYSTEMS AND METHODS OF USING SAME | Non-Final OA | ASM IP Holding B.V. |
| 18698945 | PEROVSKITE SUPERLATTICES WITH EFFICIENT CARRIER DYNAMICS | Non-Final OA | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 18286359 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE | Non-Final OA | JUSUNG ENGINEERING CO., LTD. |
| 18398781 | SUPPRESSION OF DOPANT HYDRIDE EVOLUTION FROM EPITAXIAL FILMS IN INTEGRATED CIRCUIT (IC) MANUFACTURING | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 18668884 | INHIBITORS FOR SELECTIVE EPITAXIAL DEPOSITION | Non-Final OA | Applied Materials, Inc. |
| 18226007 | METHODS, SYSTEMS, AND APPARATUS FOR FORMING LAYERS HAVING SINGLE CRYSTALLINE STRUCTURES | Non-Final OA | Applied Materials, Inc. |
| 18609525 | FILM FORMING METHOD AND FILM FORMING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18613188 | SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | Non-Final OA | ROHM CO., LTD. |
| 18042362 | METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES AS THE SOURCE MATERIAL | Non-Final OA | Board of Regents, The University of Texas System |
| 17801181 | CONTROLLING THE THICKNESS AND WIDTH OF A CRYSTALLINE SHEET FORMED ON THE SURFACE OF A MELT USING COMBINED SURFACE COOLING AND MELT HEATING | Final Rejection | Blue Origin, LLC |
| 18707810 | METHOD FOR PRODUCING HETEROEPITAXIAL WAFER | Final Rejection | SHIN-ETSU HANDOTAI CO., LTD. |
| 18661875 | MANAGING GROWTH OF SILICON CARBIDE CRYSTALS | Non-Final OA | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
| 18571926 | METHOD OF PREPARING A SURFACE OF A SINGLE CRYSTAL WAFER AS AN EPITAXIAL TEMPLATE, EPITAXIAL TEMPLATE AND DEVICE | Final Rejection | MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. |
| 18264975 | METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OPTOELECTRONIC DEVICE MANUFACTURED USING SAME | Non-Final OA | SOCPRA SCIENCES ET GENIE S.E.C. |
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