Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1714 2812 2837
This examiner grants 56% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18603351 | AUTOMATED CONTROL OF SINGLE-CRYSTAL FIBER GROWTH PROCESS | Non-Final OA | Alcon Inc. |
| 18153254 | METHOD OF FORMING AN EPITAXIAL STACK ON A PLURALITY OF SUBSTRATES | Final Rejection | ASM IP Holding B.V. |
| 18086734 | EPITAXIAL REACTOR SYSTEMS AND METHODS OF USING SAME | Non-Final OA | ASM IP Holding B.V. |
| 18566764 | CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED GAAS BY HYDRIDE VAPOR PHASE EPITAXY | Non-Final OA | Alliance for Sustainable Energy, LLC |
| 18226007 | METHODS, SYSTEMS, AND APPARATUS FOR FORMING LAYERS HAVING SINGLE CRYSTALLINE STRUCTURES | Final Rejection | Applied Materials, Inc. |
| 18374744 | CONDUCTIVE C-PLANE GaN SUBSTRATE | Final Rejection | MITSUBISHI CHEMICAL CORPORATION |
| 17769404 | SINGLE-CRYSTAL METAL FILM BY SOLID-STATE CRYSTAL GROWTH OF SEED CRYSTALS, LARGE-AREA SINGLE-LAYER OR MULTILAYER GRAPHENE WITH ADJUSTED ORIENTATION ANGLE USING SAME, AND METHOD FOR MANUFACTURING SAME | Final Rejection | IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
| 18683789 | METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON | Non-Final OA | SILTRONIC AG |
| 18042007 | METHOD OF FABRICATING HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES ON A CRYSTALLINE SUBSTRATE | Non-Final OA | NATIONAL UNIVERSITY OF SINGAPORE |
| 17791005 | METHOD FOR MANUFACTURING GROUP III NITRIDE SUBSTRATE, AND GROUP III NITRIDE SUBSTRATE | Final Rejection | SHIN-ETSU CHEMICAL CO., LTD |
| 18042362 | METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES AS THE SOURCE MATERIAL | Final Rejection | Board of Regents, The University of Texas System |
| 18276463 | METHOD FOR DETECTING SURFACE STATE OF RAW MATERIAL MELT, METHOD FOR PRODUCING SINGLE CRYSTAL, AND APPARATUS FOR PRODUCING CZ SINGLE CRYSTAL | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 17801181 | CONTROLLING THE THICKNESS AND WIDTH OF A CRYSTALLINE SHEET FORMED ON THE SURFACE OF A MELT USING COMBINED SURFACE COOLING AND MELT HEATING | Final Rejection | Blue Origin, LLC |
| 17981041 | MOLECULAR BEAM EPITAXY (MBE) REACTORS WITH MODIFIED CRYOSHROUDS FOR n+GaN REGROWTH, AND METHODS FOR n+GaN REGROWTH | Final Rejection | Qorvo US, Inc. |
| 18331209 | PHASE-CONTROLLABLE SYNTHESIS OF TRANSITION METAL DICHALCOGENIDE MONOLAYER CRYSTALS | Non-Final OA | City University of Hong Kong |
| 17620182 | IN-SITU AND SELECTIVE AREA ETCHING OF SURFACES OR LAYERS, AND HIGH-SPEED GROWTH OF GALLIUM NITRIDE, BY ORGANOMETALLIC CHLORINE PRECURSORS | Final Rejection | Yale University |
| 18571926 | METHOD OF PREPARING A SURFACE OF A SINGLE CRYSTAL WAFER AS AN EPITAXIAL TEMPLATE, EPITAXIAL TEMPLATE AND DEVICE | Non-Final OA | MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. |
| 18286359 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE | Final Rejection | JUSUNG ENGINEERING CO., LTD. |
| 18374765 | METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANIC CRYSTAL HETEROSTRUCTURE | Final Rejection | The Trustees of Princeton University |
| 18394999 | Carrier-Assisted Method for Parting Crystalline Material Along Laser Damage Region | Non-Final OA | Wolfspeed, Inc. |
| 18581200 | Sublimation System And Method Of Growing At Least One Single Crystal | Non-Final OA | SiCrystal GmbH |
| 18410347 | INGOT PULLER APPARATUS AND METHODS FOR GROWING A SINGLE CRYSTAL SILICON INGOT WITH REDUCED LOWER CHAMBER DEPOSITS | Non-Final OA | GlobalWafers Co., Ltd. |
| 18326487 | METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED CARBON CONTAMINATION AND SUSCEPTORS FOR USE IN SUCH METHODS | Non-Final OA | GlobalWafers Co., Ltd. |
| 18563302 | LOW-TRANSMISSION-LOSS SINGLE-CRYSTAL COPPER MATERIAL AND PREPARATION METHOD THEREFOR, PCB AND PREPARATION METHOD THEREFOR AND ELECTRONIC COMPONENT | Non-Final OA | ZHONGKE CRYSTAL MATERIALS (DONGGUAN) CO., LIMITED |
| 18501951 | STRUCTURES FOR COMMUNICATION, MONITORING AND CONTROL OF CORROSIVE PROCESS ENVIRONMENTS AT HIGH PRESSURE AND HIGH TEMPERATURE | Non-Final OA | SLT Technologies, Inc. |
| 18549053 | SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE | Non-Final OA | KISELKARBID I STOCKHOLM AB |
| 18229053 | DEFECT REDUCTION IN DIAMOND | Non-Final OA | Advanced Diamond Holdings, LLC |
| 18298352 | APPARATUS AND METHODS FOR THE MANUFACTURE OF SYNTHETIC DIAMONDS AND CUBIC BORON NITRIDE | Non-Final OA | GULL CORPORATION LTD |
| 17625441 | A METHOD OF CONTROLLED N-DOPING OF GROUP III-V MATERIALS GROWN ON (111) SI | Non-Final OA | Integrated Solar AS |
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