Tech Center 2800 • Art Units: 1714 2812
This examiner grants 56% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18226007 | METHODS, SYSTEMS, AND APPARATUS FOR FORMING LAYERS HAVING SINGLE CRYSTALLINE STRUCTURES | Final Rejection | Applied Materials, Inc. |
| 18374744 | CONDUCTIVE C-PLANE GaN SUBSTRATE | Final Rejection | MITSUBISHI CHEMICAL CORPORATION |
| 17769404 | SINGLE-CRYSTAL METAL FILM BY SOLID-STATE CRYSTAL GROWTH OF SEED CRYSTALS, LARGE-AREA SINGLE-LAYER OR MULTILAYER GRAPHENE WITH ADJUSTED ORIENTATION ANGLE USING SAME, AND METHOD FOR MANUFACTURING SAME | Final Rejection | IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
| 18042362 | METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES AS THE SOURCE MATERIAL | Final Rejection | Board of Regents, The University of Texas System |
| 17620182 | IN-SITU AND SELECTIVE AREA ETCHING OF SURFACES OR LAYERS, AND HIGH-SPEED GROWTH OF GALLIUM NITRIDE, BY ORGANOMETALLIC CHLORINE PRECURSORS | Final Rejection | Yale University |
| 17791005 | METHOD FOR MANUFACTURING GROUP III NITRIDE SUBSTRATE, AND GROUP III NITRIDE SUBSTRATE | Final Rejection | SHIN-ETSU CHEMICAL CO., LTD |
| 18190696 | PYROMETER CONTROLLED MULTI-WAFER CLEANING PROCESS | Non-Final OA | ASM IP Holding, B.V. |
| 18276463 | METHOD FOR DETECTING SURFACE STATE OF RAW MATERIAL MELT, METHOD FOR PRODUCING SINGLE CRYSTAL, AND APPARATUS FOR PRODUCING CZ SINGLE CRYSTAL | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 17801181 | CONTROLLING THE THICKNESS AND WIDTH OF A CRYSTALLINE SHEET FORMED ON THE SURFACE OF A MELT USING COMBINED SURFACE COOLING AND MELT HEATING | Non-Final OA | Blue Origin, LLC |
| 18550679 | METHOD OF PRODUCING GAAS WAFER, AND GAAS WAFER GROUP | Non-Final OA | DOWA Electronics Materials Co., Ltd. |
| 18566764 | CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED GAAS BY HYDRIDE VAPOR PHASE EPITAXY | Non-Final OA | Alliance for Sustainable Energy, LLC |
| 18482847 | METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS | Non-Final OA | MEISHAN BOYA ADVANCED MATERIALS CO., LTD. |
| 18683789 | METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON | Non-Final OA | SILTRONIC AG |
| 17058645 | ANISOTROPIC MATERIALS AND METHODS OF FORMING ANISOTROPIC MATERIALS EXHIBITING HIGH OPTICAL ANISOTROPY | Final Rejection | Wisconsin Alumni Research Foundation |
| 18331209 | PHASE-CONTROLLABLE SYNTHESIS OF TRANSITION METAL DICHALCOGENIDE MONOLAYER CRYSTALS | Non-Final OA | City University of Hong Kong |
| 18394999 | Carrier-Assisted Method for Parting Crystalline Material Along Laser Damage Region | Non-Final OA | Wolfspeed, Inc. |
| 18506315 | PHASE STABILIZED GROWTH OF MONOCLINIC-GALLIUM OXIDE ON THERMALLY CONDUCTING MATERIALS | Non-Final OA | University of South Carolina |
| 18581200 | Sublimation System And Method Of Growing At Least One Single Crystal | Non-Final OA | SiCrystal GmbH |
| 18410347 | INGOT PULLER APPARATUS AND METHODS FOR GROWING A SINGLE CRYSTAL SILICON INGOT WITH REDUCED LOWER CHAMBER DEPOSITS | Non-Final OA | GlobalWafers Co., Ltd. |
| 18344875 | METHOD OF GROWING SILICON CARBIDE CRYSTALS | Final Rejection | GlobalWafers Co., Ltd. |
| 18326487 | METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED CARBON CONTAMINATION AND SUSCEPTORS FOR USE IN SUCH METHODS | Non-Final OA | GlobalWafers Co., Ltd. |
| 18575373 | METHOD FOR PREPARING CREMATION CRYSTALS USING CATALYST OBTAINED THROUGH REDUCTION OF PHOSPHORUS IN SKELETAL REMAINS | Non-Final OA | MI Kyung KO |
| 18285224 | POLYCRYSTALLINE SiC MOLDED ARTICLE AND METHOD FOR PRODUCING SAME | Final Rejection | TOKAI CARBON CO., LTD. |
| 18397872 | METHOD, APPARATUS, SYSTEM AND COMPUTER STORAGE MEDIUM OF CONTROLLING CRYSTAL GROWTH | Non-Final OA | Zing Semiconductor Corporation |
| 18563302 | LOW-TRANSMISSION-LOSS SINGLE-CRYSTAL COPPER MATERIAL AND PREPARATION METHOD THEREFOR, PCB AND PREPARATION METHOD THEREFOR AND ELECTRONIC COMPONENT | Non-Final OA | ZHONGKE CRYSTAL MATERIALS (DONGGUAN) CO., LIMITED |
| 18501951 | STRUCTURES FOR COMMUNICATION, MONITORING AND CONTROL OF CORROSIVE PROCESS ENVIRONMENTS AT HIGH PRESSURE AND HIGH TEMPERATURE | Non-Final OA | SLT Technologies, Inc. |
| 18360892 | METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE ON FLEXIBLE SUBSTRATE | Final Rejection | EWHA UNIVERSITY-INDUSTRY COLLABORATION FOUNDATION |
| 18161898 | METHODS FOR AUTOMATICALLY CONTROLLING MATERIAL SUCTION IN A PROCESS OF PULLING-UP OF A MONOCRYSTAL | Final Rejection | TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD. |
| 18547302 | SYNTHETIC DIAMOND FROM A LEVITATING SUPERSATURATED SOLVENT AT LOW PRESSURE: PROCESS, APPARATUS, AND MATERIAL | Final Rejection | Cosmic Diamonds LLC |
| 18229053 | DEFECT REDUCTION IN DIAMOND | Non-Final OA | Advanced Diamond Holdings, LLC |
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