Prosecution Insights
Prosecution Insights
Technology areas: Chemistry & Materials • Medical Devices & Mechanical Engineering
6 pending office actions • 4 art units • 5 examiners • 0 of 6 (0%) have an AI response strategy ready • 22 patents granted in the last 365 days
Siltronic AG is managing 6 pending office actions within the Chemistry & Materials technology area. These 6 actions are being reviewed by 5 distinct examiners. This distribution shows that the workload is spread across the assigned personnel. The company's interaction with 5 distinct examiners suggests a need to navigate several different individual examination styles within the materials sector.
The prosecution activity for Siltronic AG occurs across 4 distinct art units. Having 4 art units for 6 pending office actions reflects technical variety in the company's materials-related filings. BRATLAND JR, KENNETH A is the busiest examiner for the portfolio, holding 2 pending office actions. This means that while Bratland handles 2 actions, the other pending actions are split among the remaining examiners. This structure indicates a focused but technically varied approach to securing patent protection in the chemistry field, requiring attention to several examination groups at the patent office.
Based on the USPTO statutory response window for each pending office action. 2 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 3 (50%) |
| §112 only | 2 (33%) |
| Multi-statute (no §101) | 1 (17%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| BRATLAND JR, KENNETH A | 2 | 56.1% | +16.3% |
| CARRILLO, BIBI SHARIDAN | 1 | 62.3% | -15.5% |
| QI, HUA | 1 | 56.6% | +23.1% |
| BOWMAN, ANDREW J | 1 | 65.9% | +13.2% |
| SHUM, KENT N | 1 | 37.7% | +50.3% |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 1 ordered by deadline are shown.
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 5 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18683789 | METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON | BRATLAND JR, KENNETH A | 8d |
| 18833981 | METHOD AND APPARATUS FOR PRODUCING ELECTRICALLY CONDUCTING BULK ß-GA2O3 SINGLE CRYSTALS AND ELECTRICALLY CONDUCTING BULK ß-GA2O3 SINGLE CRYSTAL | QI, HUA | — |
| 18833949 | METHOD FOR DEPOSITING A STRAIN RELAXED GRADED BUFFER LAYER OF SILICON GERMANIUM ON A SURFACE OF A SUBSTRATE | BOWMAN, ANDREW J | — |
| 18686906 | METHOD FOR GRINDING SEMICONDUCTOR WAFERS | SHUM, KENT N | — |
| 18019145 | APPARATUS AND METHOD FOR DEPOSITING A LAYER OF SEMICONDUCTOR MATERIAL ON A SUBSTRATE WAFER | BRATLAND JR, KENNETH A | — |
| Art Unit | Apps |
|---|---|
| 1714 | 2 |
| 1711 | 1 |
| 1717 | 1 |
| 3723 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18848950 | METHOD FOR CLEANING SEMICONDUCTOR WAFERS IN A CLEANING LINE | CARRILLO, BIBI SHARIDAN | 1711 | §112 | Final Rejection | 7d | Pending | Sep 20, 2024 |
| 18833981 | METHOD AND APPARATUS FOR PRODUCING ELECTRICALLY CONDUCTING BULK ß-GA2O3 SINGLE CRYSTALS AND ELECTRICALLY CONDUCTING BULK ß-GA2O3 SINGLE CRYSTAL | QI, HUA | — | §103§112 | Non-Final OA | — | Pending | Jul 29, 2024 |
| 18833949 | METHOD FOR DEPOSITING A STRAIN RELAXED GRADED BUFFER LAYER OF SILICON GERMANIUM ON A SURFACE OF A SUBSTRATE | BOWMAN, ANDREW J | 1717 | §103 | Final Rejection | — | Pending | Jul 29, 2024 |
| 18686906 | METHOD FOR GRINDING SEMICONDUCTOR WAFERS | SHUM, KENT N | 3723 | §112 | Non-Final OA | — | Pending | Feb 27, 2024 |
| 18683789 | METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON | BRATLAND JR, KENNETH A | 1714 | §103 | Final Rejection | 8d | Pending | Feb 15, 2024 |
| 18019145 | APPARATUS AND METHOD FOR DEPOSITING A LAYER OF SEMICONDUCTOR MATERIAL ON A SUBSTRATE WAFER | BRATLAND JR, KENNETH A | 1714 | §103 | Non-Final OA | — | Pending | Feb 01, 2023 |
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