Listed by the USPTO as AHMED, SHAMIM
Tech Center 1700 • Art Units: 1713 1792
This examiner grants 78% of resolved cases
AHMED, SHAMIM is assigned to Tech Center 1700 and Art Unit 1713. The profile records 1222 resolved cases, a 78.5% allowance rate, and a median of 1001 days to allowance. Interviews show a 22.1% lift in allowance outcomes, supporting deliberate preparation for examiner discussions when claim or prior-art issues can be narrowed through direct engagement.
The listed companies are Samsung Electronics Co., Ltd., Tokyo Electron Limited, and Tokyo Ohka Kogyo Co., Ltd. The listed firms are HARNESS, DICKEY & PIERCE, P.L.C., FOLEY & LARDNER LLP, and JCIPRNET. The large historical record and median timeline beyond three years support proactive docket management and early decisions about amendment strategy.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19051693 | METHOD FOR TREATING OBJECT TO BE TREATED, TREATMENT LIQUID, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | Non-Final OA | FUJIFILM CORPORATION |
| 18924443 | METHOD OF PROCESSING SUBSTRATE USING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18924620 | POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18609533 | CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18864999 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM | Non-Final OA | Tokyo Electron Limited |
| 18842620 | HARD MASK, SUBSTRATE PROCESSING METHOD, AND REMOVAL METHOD FOR HARD MASK | Final Rejection | Tokyo Electron Limited |
| 18925805 | DIRECTIONAL ANGLED ETCH FOR HARDMASK OPENING AND LWR IMPROVEMENT | Non-Final OA | Applied Materials, Inc. |
| 18857322 | ABRASIVE GRAINS AND METHOD FOR SELECTING SAME, POLISHING LIQUID, MULTI-LIQUID TYPE POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD | Non-Final OA | Resonac Corporation |
| 18924422 | PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | Non-Final OA | TOKYO OHKA KOGYO CO., LTD. |
| 18924413 | PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | Non-Final OA | TOKYO OHKA KOGYO CO., LTD. |
| 19237240 | METHOD OF PLASMA ETCHING | Non-Final OA | SPTS Technologies Limited |
| 18231926 | METHODS AND MATERIALS FOR POLISHING OF MATERIALS | Final Rejection | ENTEGRIS, INC. |
| 18202007 | ETCHANT COMPOSITION AND METHOD | Final Rejection | ENTEGRIS, INC. |
| 18810102 | POST-CHEMICAL MECHANICAL POLISHING CLEANING COMPOSITION, POST-CHEMICAL MECHANICAL POLISHING AND CLEANING TREATMENT METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | Non-Final OA | FUJIMI INCORPORATED |
| 17568827 | POLISHING COMPOSITION, METHOD FOR MANUFACTURING POLISHING COMPOSITION, AND POLISHING METHOD | Final Rejection | FUJIMI INCORPORATED |
| 18956558 | SUBSTRATE PROCESSING METHOD, MANUFACTURING METHOD, AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | SEMES CO., LTD. |
| 18879092 | CMP SLURRY COMPOSITION FOR POLISHING COPPER BARRIER LAYER | Non-Final OA | YCCHEM CO., LTD. |
| 18814585 | MOLYBDENUM FILM ETCHANT COMPOSITION AND ETCHING METHOD USING SAME | Non-Final OA | YCCHEM CO., LTD. |
| 18980788 | METHOD OF ETCHING METAL OXIDE LAYER BY USING ATOMIC LAYER ETCHING | Non-Final OA | INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS |
| 18963535 | MANUFACTURING METHOD FOR A PACKAGING SUBSTRATE | Non-Final OA | Absolics Inc. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy78.5% of resolved applications examined by Shamim Ahmed were allowed (1,222 resolved cases), compared with 62.4% across Art Unit 1713 over the last five years.
This examiner's interview lift is +22.1 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Shamim Ahmed took 1,001 days on average from filing to allowance.
Shamim Ahmed examines applications in Art Unit 1713 in Tech Center 1700 (Chemistry & Materials).
