Listed by the USPTO as ALROBAIE, KHAMDAN N
Tech Center 2800 • Art Units: 2824 2827
This examiner grants 86% of resolved cases
ALROBAIE, KHAMDAN N works in Tech Center 2800 and Art Unit 2824. The profile covers 667 resolved cases, with an 86.5% allowance rate and a 2.4% interview lift. Median time to allowance is 805 days. The high allowance outcome and shorter median duration stand out, while the interview figure indicates little association with additional allowance results.
Top companies are Micron Technology Inc., Taiwan Semiconductor Manufacturing Company, Ltd., and Microchip Technology Incorporated. The leading firms are BROOKS, CAMERON & HUEBSCH, PLLC, DORITY & MANNING, P.A., and FISH & RICHARDSON P.C. (TC). This record supports efficient, focused prosecution planning.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19188184 | MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 19016596 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18503479 | METHOD AND DEVICE FOR OPERATING A MEMORY DEVICE | Non-Final OA | Robert Bosch GmbH |
| 19022129 | VOLTAGE THRESHOLD ADJUSTMENT OF STORAGE DEVICES BY AN EXTERNAL CONTROLLER | Non-Final OA | PURE STORAGE, INC. |
| 18866738 | CONFIGURABLE-PERFORMANCE RESISTIVE MEMORY AND ASSOCIATED METHODS | Non-Final OA | COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES |
| 19070824 | PARTIAL BLOCK READ LEVEL VOLTAGE COMPENSATION TO DECREASE READ TRIGGER RATES | Non-Final OA | Micron Technology, Inc. |
| 18968817 | SETTING SWITCHING FOR SINGLE-LEVEL CELLS | Non-Final OA | Micron Technology, Inc. |
| 18950911 | CODING TO DECREASE ERROR RATE DISCREPANCY BETWEEN PAGES | Non-Final OA | Micron Technology, Inc. |
| 18373490 | WORD LINE DRIVERS FOR MEMORY DEVICES | Final Rejection | Micron Technology, Inc. |
| 18698617 | NEURAL NETWORK CIRCUIT AND NEURAL NETWORK CIRCUIT CONTROL METHOD | Final Rejection | MAXELL, LTD. |
| 18917954 | DEEP LEARNING BASED ITERATIVE VOLTAGE THRESHOLD ESTIMATION FOR NAND FLASH MEMORY | Final Rejection | SK hynix Inc. |
| 19038241 | NOVEL DYNAMIC INHIBIT VOLTAGE TO REDUCE WRITE POWER FOR RANDOM-ACCESS MEMORY | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18968729 | MEMORY CELL ARRAY CIRCUIT AND METHOD OF FORMING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18938961 | MEMORY DEVICE WITH WRITE PULSE TRIMMING | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 19022593 | MEMORY DEVICE INCLUDING A WORD LINE WITH PORTIONS WITH DIFFERENT SIZES IN DIFFERENT METAL LAYERS | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 18894234 | SYNCHRONIZATION POINT BASED PARAMETER TUNING IN A STORAGE DEVICE | Final Rejection | Sandisk Technologies, Inc. |
| 19198492 | SYSTEM AND METHOD FOR SWAPPING FAULTY MEMORY ADDRESSES IN A MICROCONTROLLER | Non-Final OA | Microchip Technology Incorporated |
| 18984995 | PROGRAM ERROR HANDLING AT A STORAGE DEVICE | Non-Final OA | Microchip Technology Incorporated |
| 18903427 | NON-ADJACENT CONNECTION OF HIGH-BANDWIDTH MEMORY CHIPLETS, I/O CHIPLETS, AND COMPUTE CHIPLETS THROUGH EMBEDDED LOGIC BRIDGES | Final Rejection | OpenAI OpCo, LLC. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy86.5% of resolved applications examined by Khamdan N Alrobaie were allowed (667 resolved cases), compared with 86.6% across Art Unit 2824 over the last five years.
This examiner's interview lift is +2.4 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Khamdan N Alrobaie took 805 days on average from filing to allowance.
Khamdan N Alrobaie examines applications in Art Unit 2824 in Tech Center 2800 (Semiconductors, Circuits & Optics).
