Listed by the USPTO as BAIG, ANEESA RIAZ
Tech Center 4100 • Art Units: 2814 4100
This examiner grants 92% of resolved cases
BAIG, ANEESA RIAZ is a USPTO patent examiner in tech center 4100 and art unit 2814. The examiner has 49 resolved cases, an allowance rate of 91.8%, and a median of 1217 days to allowance. The interview lift is 10.3%.
The listed companies are KIOXIA Corporation, Samsung Electronics Co., Ltd., and Samsung Display Co., Ltd. The leading firms are Calderon Safran & Wright P.C., FOLEY & LARDNER LLP, and HARNESS, DICKEY & PIERCE, P.L.C. The limited case volume calls for application-specific review, but the profile still gives practitioners a starting point for assessing allowance outcomes, timing, and the potential role of examiner interviews.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18659238 | SEMICONDUCTOR DEVICES HAVING CHANNEL STRUCTURES | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18504233 | LIGHT EMITTING ELEMENT AND DISPLAY DEVICE COMPRISING THE LIGHT EMITTING ELEMENT | Final Rejection | Samsung Display Co., LTD. |
| 18421986 | FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 18605749 | INTEGRATED CIRCUIT DEVICE INCLUDING A MULTI-CHIP PACKAGE | Non-Final OA | QUALCOMM Incorporated |
| 18593097 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE | Non-Final OA | Kioxia Corporation |
| 18593502 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | Kioxia Corporation |
| 18472837 | CORRUGATED CAPACITOR | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 17893736 | METHOD OF MAKING A PLURALITY OF 3D SEMICONDUCTOR DEVICES WITH ENHANCED MOBILITY AND CONDUCTIVITY | Final Rejection | Tokyo Electron Limited |
| 18179431 | SOLDER TRANSFER INTEGRATED CIRCUIT PACKAGING | Non-Final OA | International Business Machines Corporation |
| 18593660 | ELECTRONIC PACKAGE | Non-Final OA | Skyworks Solutions, Inc. |
| 18589011 | STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE WITH WORD LINE CONTACT VIA STRUCTURES LOCATED OVER SUPPORT FEATURES AND METHODS OF FORMING THE SAME | Non-Final OA | SANDISK TECHNOLOGIES LLC |
| 18635547 | STACKED HIGH-POWER RF SWITCH | Non-Final OA | GlobalFoundries U.S. Inc. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy91.8% of resolved applications examined by Aneesa Riaz Baig were allowed (49 resolved cases), compared with 74.2% across Art Unit 2814 over the last five years.
This examiner's interview lift is +10.3 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Aneesa Riaz Baig took 1,217 days on average from filing to allowance.
Aneesa Riaz Baig examines applications in Art Unit 2814 in Tech Center 4100.
