Listed by the USPTO as BENNETT, CHARLEE
Tech Center 4100 • Art Units: 1713 1714 1718 1759 2893 3652 4100
This examiner grants 59% of resolved cases
Bennett, Charlee handled 571 resolved cases in Tech Center 4100 and Art Unit 1713. The allowance rate was 58.8%, and the median time to allowance was 1353 days. Interview lift was 35.1%, indicating that interviews were associated with a meaningful improvement in allowance outcomes.
Applied Materials Inc., Semes Co., Ltd., and ASM IP Holding B.V. were the leading companies. The principal firms were HARNESS, DICKEY & PIERCE, P.L.C., MILES & STOCKBRIDGE PC, and Snell & Wilmer (ASM IP Holding B.V.). The combination of a moderate allowance rate, lengthy pendency, and positive interview effect supports focused prosecution strategy, especially around interviews and narrowing disputed issues.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18910685 | PLASMA GENERATION CIRCUIT AND SUBSTRATE PROCESSING DEVICE INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18383211 | PROCESS CHAMBER, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME, AND OPERATING METHOD OF THE SUBSTRATE TREATING APPARATUS | Final Rejection | Samsung Electronics Co., Ltd. |
| 18631858 | SEMICONDUCTOR PROCESSING DEVICE WITH EDGE PURGING | Non-Final OA | ASM IP Holding B.V. |
| 18051803 | SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS | Final Rejection | ASM IP Holding B.V. |
| 18767915 | RF POWER COMPENSATION TO REDUCE DEPOSITION OR ETCH RATE CHANGES IN RESPONSE TO SUBSTRATE BULK RESISTIVITY VARIATIONS | Final Rejection | Lam Research Corporation |
| 18654271 | SUBSTRATE SUPPORT WITH IMPROVED PROCESS UNIFORMITY | Non-Final OA | Lam Research Corporation |
| 18693940 | A METHOD AND APPARATUS FOR ENHANCING ION ENERGY AND REDUCING ION ENERGY SPREAD IN AN INDUCTIVELY COUPLED PLASMA | Non-Final OA | Lam Research Corporation |
| 18935537 | PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18179503 | Ceramic Pedestal Shaft with Heated/Cooled Gas Tube | Non-Final OA | Tokyo Electron Limited |
| 18690502 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | Non-Final OA | Hitachi High-Tech Corporation |
| 18279755 | PLASMA PROCESSING APPARATUS AND HEATING APPARATUS | Final Rejection | Hitachi High-Tech Corporation |
| 18823303 | WAFER EDGE RING LIFTING SOLUTION | Non-Final OA | Applied Materials, Inc. |
| 18765826 | METROLOGY SLOT PLATES | Non-Final OA | APPLIED MATERIALS, INC. |
| 18620411 | GROUNDING PLATE FOR STRESS TUNING HIGH DENSITY AND MODULUS FILMS | Non-Final OA | Applied Materials, Inc. |
| 18595231 | LID AND HYDBRID SUBSTRATE SUPPORT FOR EFFICIENT HEATING AND COOLING IN PROCESS CHAMBERS | Non-Final OA | Applied Materials, Inc. |
| 18440573 | MULTI-ZONE PROFILE CONTROL FOR INCONSISTENT UNDERLAYER | Non-Final OA | Applied Materials, Inc. |
| 18401112 | REAL-TIME MEASUREMENT OF MICROWAVE RESONATORS AS PLASMA DIAGNOSTICS FOR PROCESS MONITORING | Non-Final OA | Applied Materials, Inc. |
| 18379915 | SHOWERHEAD DESIGN FOR PLASMA-ENHANCED DEPOSITION | Final Rejection | Applied Materials, Inc. |
| 18483965 | COMPACT DYNAMIC LEVELING LIFT MECHANISM | Non-Final OA | Applied Materials, Inc. |
| 18467211 | PLASMA PROCESSING CHAMBER LID COOLING | Final Rejection | Applied Materials, Inc. |
| 18323941 | DYNAMIC INTERFACE FOR PROVIDING A SYMMETRIC RADIO FREQUENCY RETURN PATH | Non-Final OA | Applied Materials, Inc. |
| 18131534 | ADVANCED METHOD FOR CREATING ELECTROSTATIC CHUCK (ESC) MESA PATTERNS | Non-Final OA | Applied Materials, Inc. |
| 18083372 | FAST GAS SWITCHING | Non-Final OA | Applied Materials, Inc. |
| 17970451 | PLASMA PROCESSING CHAMBERS CONFIGURED FOR TUNABLE SUBSTRATE AND EDGE SHEATH CONTROL | Non-Final OA | Applied Materials, Inc. |
| 18940456 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18782651 | METHODS OF SUBSTRATE PROCESSING AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18417671 | HEATER ASSEMBLY, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | Kokusai Electric Corporation |
| 17903515 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 18396397 | SUPPORT | Final Rejection | SPTS TECHNOLOGIES LIMITED |
| 18419384 | Centering Device, Centering Method and Substrate Processing Apparatus | Final Rejection | SCREEN Holdings Co., Ltd. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy58.8% of resolved applications examined by Charlee Bennett were allowed (571 resolved cases), compared with 62.4% across Art Unit 1713 over the last five years.
This examiner's interview lift is +35.1 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Charlee Bennett took 1,353 days on average from filing to allowance.
Charlee Bennett examines applications in Art Unit 1713 in Tech Center 4100.
