Listed by the USPTO as BRATLAND JR, KENNETH A
Tech Center 2800 • Art Units: 1714 1734 2812 2837
This examiner grants 56% of resolved cases
BRATLAND JR, KENNETH A works in Tech Center 2800 and art unit 1714, with 888 resolved cases. The allowance rate is 56.2%, and the median time to allowance is 1162 days. The interview lift is 16.3%, indicating that interviews have a positive association with allowance despite the moderate allowance rate.
The listed companies are Globalwafers Co., Ltd., Applied Materials Inc., and ASM IP Holding B.V. The listed firms are Snell & Wilmer (ASM IP Holding B.V.), Brooks Kushman P.C., and BUCHANAN, INGERSOLL & ROONEY PC. The extensive record supports careful expectation setting, while the median time and allowance rate make amendment strategy and interview preparation important considerations.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18742250 | METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRECURSORS | Final Rejection | ASM IP Holding B.V. |
| 18540230 | METHODS FOR FORMING SEMICONDUCTOR STACKED STRUCTURES ON A SUBSTRATE AND RELATED SEMICONDUCTOR STRUCTURES | Non-Final OA | ASM IP Holding B.V. |
| 18190696 | PYROMETER CONTROLLED MULTI-WAFER CLEANING PROCESS | Non-Final OA | ASM IP Holding, B.V. |
| 18669579 | MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR GROUP III NITRIDE CRYSTAL | Final Rejection | Panasonic Holdings Corporation |
| 18633576 | DEVICE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL | Final Rejection | Panasonic Holdings Corporation |
| 18698945 | PEROVSKITE SUPERLATTICES WITH EFFICIENT CARRIER DYNAMICS | Final Rejection | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 18609525 | FILM FORMING METHOD AND FILM FORMING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18707810 | METHOD FOR PRODUCING HETEROEPITAXIAL WAFER | Final Rejection | SHIN-ETSU HANDOTAI CO., LTD. |
| 18613188 | SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | Non-Final OA | ROHM CO., LTD. |
| 18668884 | INHIBITORS FOR SELECTIVE EPITAXIAL DEPOSITION | Non-Final OA | Applied Materials, Inc. |
| 18657458 | NON-LINE-OF-SIGHT JUNCTION FORMATION | Non-Final OA | Applied Materials, Inc. |
| 18226007 | METHODS, SYSTEMS, AND APPARATUS FOR FORMING LAYERS HAVING SINGLE CRYSTALLINE STRUCTURES | Non-Final OA | Applied Materials, Inc. |
| 18331209 | PHASE-CONTROLLABLE SYNTHESIS OF TRANSITION METAL DICHALCOGENIDE MONOLAYER CRYSTALS | Non-Final OA | City University of Hong Kong |
| 18042362 | METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES AS THE SOURCE MATERIAL | Non-Final OA | Board of Regents, The University of Texas System |
| 17970180 | METHOD FOR MANUFACTURING A MONOCRYSTALLINE SAPPHIRE SEED AS WELL AS A SAPPHIRE SINGLE-CRYSTAL WITH A PREFERRED CRYSTALLOGRAPHIC ORIENTATION AND EXTERNAL PART AND FUNCTIONAL COMPONENTS FOR WATCHMAKING AND JEWELLERY | Non-Final OA | Comadur SA |
| 18566764 | CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED GAAS BY HYDRIDE VAPOR PHASE EPITAXY | Final Rejection | Alliance for Sustainable Energy, LLC |
| 18635262 | SYSTEMS AND METHODS FOR MICROVOID ANALYSIS IN CRYSTALS GROWN BY CONTINUOUS CZOCHRALSKI PULLERS | Non-Final OA | GlobalWafers Co., Ltd. |
| 18622166 | INGOT PULLER APPARATUS INCLUDING MOVEABLE COOLING JACKET FOR CONTROLLED INGOT COOLING PROFILES | Non-Final OA | GlobalWafers Co., Ltd. |
| 18410347 | INGOT PULLER APPARATUS AND METHODS FOR GROWING A SINGLE CRYSTAL SILICON INGOT WITH REDUCED LOWER CHAMBER DEPOSITS | Final Rejection | GlobalWafers Co., Ltd. |
| 18398449 | METHODS OF PROCESSING EPITAXIAL SEMICONDUCTOR WAFERS | Final Rejection | GlobalWafers Co., Ltd. |
| 18326487 | METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED CARBON CONTAMINATION AND SUSCEPTORS FOR USE IN SUCH METHODS | Non-Final OA | GlobalWafers Co., Ltd. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy56.2% of resolved applications examined by Kenneth A Bratland Jr. were allowed (888 resolved cases), compared with 50.6% across Art Unit 1714 over the last five years.
This examiner's interview lift is +16.3 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Kenneth A Bratland Jr. took 1,162 days on average from filing to allowance.
Kenneth A Bratland Jr. examines applications in Art Unit 1714 in Tech Center 2800 (Semiconductors, Circuits & Optics).
