Listed by the USPTO as CRAWFORD EASON, LATANYA N
Tech Center 2800 • Art Units: 2813
This examiner grants 78% of resolved cases
CRAWFORD EASON, LATANYA N examines in USPTO Technology Center 2800 and art unit 2813. The record contains 933 resolved cases, a 78.5% allowance rate, and a 0.4% interview lift. The median time to allowance is 988 days. The interview measure is close to neutral in this record, so written prosecution quality remains the clearer focus despite the strong allowance outcome.
The leading companies are Taiwan Semiconductor Manufacturing Company, Ltd., Samsung Electronics Co., Ltd., and Sony Group Corporation. The leading firms are JCIPRNET, STINSON LLP, and Apex Attorneys at Law, LLP. These recurring participants provide practical context for semiconductor and electronics matters before this examiner.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18390217 | IMAGE SENSOR | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18532504 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18489451 | SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18556417 | SENSOR DEVICE AND MANUFACTURING METHOD | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 17545467 | MAGNETIZATION ROTATION ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING SPIN-ORBIT TORQUE WIRING | Final Rejection | TDK CORPORATION |
| 18919634 | DEVICES | Non-Final OA | InnoLux Corporation |
| 18547752 | METHOD TO IMPROVE THE PERFORMANCE OF GALLIUM-CONTAINING MICRON-SIZED LIGHT-EMITTING DEVICES | Non-Final OA | The Regents of the University of California |
| 18646055 | SELECTIVE METAL CAPPING PROCESSES FOR A JUNCTION SILICIDE | Non-Final OA | Applied Materials, Inc. |
| 18400819 | SELECTIVE BOTTOM-UP METAL FILL/CAP ON JUNCTION SILICIDE BY SELECTIVE METAL REMOVAL | Non-Final OA | Applied Materials, Inc. |
| 18526529 | METHODS FOR IMPROVING DEPTH LOADING IN TRANSISTORS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, LTD. |
| 17861234 | MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18786724 | Conductive Features with Air Spacer and Method of Forming Same | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18780824 | Semiconductor Device and Manufacturing Method of Semiconductor Device | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 17976949 | SUBSTRATE FOR LIGHT EMITTING ELEMENTS, LIGHT EMITTING DEVICE INCLUDING SUBSTRATE FOR LIGHT EMITTING ELEMENTS, AND METHOD OF PRODUCING SUBSTRATE FOR LIGHT EMITTING ELEMENTS | Non-Final OA | NICHIA CORPORATION |
| 18883932 | PACKAGE STRUCTURE INCLUDING AT LEAST TWO MEMORY DEVICES, ASSEMBLY STRUCTURE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18809362 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 17104244 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | Non-Final OA | KOKUSAI ELECTRIC CORPORATION |
| 18788163 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18232593 | LED HUMAN CENTRIC LIGHTING DEVICE AND METHOD FOR MANUFACTURING SAME | Final Rejection | NINGBO SUNPU LED CO., LTD. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy78.5% of resolved applications examined by Latanya N Crawford Eason were allowed (933 resolved cases), compared with 80.3% across Art Unit 2813 over the last five years.
This examiner's interview lift is +0.4 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Latanya N Crawford Eason took 988 days on average from filing to allowance.
Latanya N Crawford Eason examines applications in Art Unit 2813 in Tech Center 2800 (Semiconductors, Circuits & Optics).
