Listed by the USPTO as DUCLAIR, STEPHANIE P.
Tech Center 3700 • Art Units: 1713 1716 1784 1792 3723
This examiner grants 72% of resolved cases
In Tech Center 3700 and Art Unit 1713, DUCLAIR, STEPHANIE P. has resolved 829 cases. The allowance rate is 72.3%, with an interview lift of 19.6%. The median time to allowance is 1005 days. The record provides a substantial basis for assessing prosecution patterns, showing a favorable allowance result and a measurable, though limited, interview association.
The leading companies are Tokyo Electron Limited, Samsung Electronics Co., Ltd., and Lam Research Corporation. The leading firms are FOLEY & LARDNER LLP, MILLEN, WHITE, ZELANO & BRANIGAN, P.C., and NSIP LAW. Applicants may rely on clear written claim treatment as the foundation, using interviews to resolve focused questions about semiconductor technology and cited references.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19026794 | ETCHANT COMPOSITION FOR ETCHING SILICON GERMANIUM FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18603614 | CHEMICAL MECHANICAL POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18848961 | NEGATIVELY CHARGED SILICA PARTICLES, METHOD OF PRODUCING SUCH PARTICLES, COMPOSITIONS COMPRISING SUCH PARTICLES, AND A METHOD OF CHEMICAL-MECHANICAL POLISHING USING SUCH PARTICLES | Non-Final OA | MERCK PATENT GMBH |
| 19053940 | ATOMIC LAYER ETCHING FOR SUBTRACTIVE METAL ETCH | Non-Final OA | Lam Research Corporation |
| 18859433 | ORGANOCHLORIDE ETCH WITH PASSIVATION AND PROFILE CONTROL | Non-Final OA | Lam Research Corporation |
| 18084303 | Hardmask to substrate pattern transfer method for Microfabrication of micro to mesoscale, high aspect ratio, multi-level, 3D Structures | Non-Final OA | The Board of Trustees of the Leland Stanford Junior University |
| 18935294 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18781793 | ETCHING SYSTEM FOR FORMING RECESSED FEATURES WITH HIGH ASPECT RATIO | Non-Final OA | Tokyo Electron Limited |
| 18588751 | VERTICAL FEATURE GROWTH USING FLUORINE-CONTAINING GAS | Final Rejection | Tokyo Electron Limited |
| 18937318 | POLISHING COMPOSITION FOR A SEMICONDUCTOR PROCESS AND MANUFACTURING METHOD OF SUBSTRATE USING THE SAME | Non-Final OA | SK HYNIX INC. |
| 18937925 | METHODS OF SELECTIVELY ETCHING SILICON | Non-Final OA | Applied Materials, Inc. |
| 18584540 | DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA | Final Rejection | Applied Materials, Inc. |
| 18682767 | ETCHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT | Final Rejection | Resonac Corporation |
| 18213865 | Control of Trench Profile Angle in SiC Semiconductors | Final Rejection | SPTS Technologies Limited |
| 18376226 | ETCHANT COMPOSITIONS AND RELATED METHODS | Final Rejection | ENTEGRIS, INC. |
| 18888714 | ETCHING COMPOSITIONS | Non-Final OA | Fujifilm Electronic Materials U.S.A., Inc. |
| 17699655 | POLISHING COMPOSITIONS AND METHODS OF USING THE SAME | Final Rejection | Fujifilm Electronic Materials U.S.A., Inc. |
| 19053065 | POLISHING COMPOSITION AND POLISHING METHOD | Non-Final OA | FUJIMI INCORPORATED |
| 18926638 | POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD OF MANUFACTURING SUBSTRATE USING SAME | Non-Final OA | YCCHEM CO., LTD. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy72.3% of resolved applications examined by Stephanie P. Duclair were allowed (829 resolved cases), compared with 62.4% across Art Unit 1713 over the last five years.
This examiner's interview lift is +19.6 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Stephanie P. Duclair took 1,005 days on average from filing to allowance.
Stephanie P. Duclair examines applications in Art Unit 1713 in Tech Center 3700 (Medical Devices & Mechanical Engineering).
