Listed by the USPTO as KUNEMUND, ROBERT M
Tech Center 2800 • Art Units: 1714 1781 1792 2818
This examiner grants 82% of resolved cases
KUNEMUND, ROBERT M works in tech center 2800 and art unit 1714. The profile reports 1346 resolved cases and an allowance rate of 82.1%. Interview lift is 13.2%, showing a measurable role for interviews without indicating that they should replace written prosecution. The median time to allowance is 1071 days, providing a useful planning reference for applicants managing examination timelines.
The leading companies are Globalwafers Co., Ltd., Taisic Materials Corp., and Samsung Electronics Co., Ltd. The firms shown are DINSMORE & SHOHL LLP, Verlo IP LLC, and BANNER & WITCOFF, LTD. Practitioners may combine focused interviews with claim amendments that clearly connect technical distinctions to the existing record.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18968834 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18559490 | EPITAXIAL NITRIDE FERROELECTRONICS | Final Rejection | The Regents of the University of Michigan |
| 18238853 | Confined Growth of 2D Materials and Their Heterostructures | Final Rejection | Massachusetts Institute of Technology |
| 18900134 | METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER | Non-Final OA | ASM IP Holding B.V. |
| 18726142 | ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, SEMICONDUCTOR WAFER USING THE ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, AND MANUFACTURING METHODS OF THE SAME | Non-Final OA | STANLEY ELECTRIC CO., LTD. |
| 18690194 | METHOD FOR MANUFACTURING A SILICON INGOT FROM SURFACE-OXIDISED SEEDS | Final Rejection | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 18702872 | COLLOIDAL CRYSTAL AND PRODUCTION METHOD THEREFOR | Non-Final OA | MURATA MANUFACTURING CO., LTD. |
| 18939211 | SYNTHESIS OF MONOLAYER TRANSITION METAL DICHALCOGENIDES BY ELECTROSTATIC SELF-ASSEMBLY | Non-Final OA | California Institute of Technology |
| 18867900 | METHOD FOR PRODUCING HETEROEPITAXIAL WAFER | Non-Final OA | SHIN-ETSU HANDOTAI CO., LTD. |
| 18960809 | COOLING ARRANGEMENTS FOR PROCESSING SYSTEMS, CHAMBERS, AND RELATED METHODS TO MODIFY SUBSTRATE TEMPERATURE PROFILES | Non-Final OA | Applied Materials, Inc. |
| 18817323 | SiC SINGLE CRYSTAL BOULE, MANUFACTURING METHOD OF SiC SINGLE CRYSTAL BOULE, AND MANUFACTURING METHOD OF SiC SUBSTRATE | Non-Final OA | Resonac Corporation |
| 18898556 | METHODS FOR CONTROLLING CRYSTALLINE PHASE OF MOLYBDENUM PRECURSORS AND RELATED COMPOSITIONS | Non-Final OA | ENTEGRIS, INC. |
| 18865726 | FABRICATION OF LARGE AREA RADIATION DETECTORS AND SHIELDING VIA FIELDASSISTED SINTERING TECHNOLOGY (FAST) | Non-Final OA | THE PENN STATE RESEARCH FOUNDATION |
| 18977640 | EXTREME LARGE GRAIN (1 MM) LATERAL GROWTH OF CD(SE,TE) ALLOY THIN FILMS BY REACTIVE ANNEALS | Non-Final OA | Alliance for Sustainable Energy, LLC |
| 18752650 | GROWTH OF STRONTIUM TETRABORATE CRYSTALS | Final Rejection | KLA CORPORATION |
| 18990573 | METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS | Non-Final OA | OSAKA UNIVERSITY |
| 18940294 | SYSTEMS AND METHODS FOR CONTROLLING A GAS DOPANT VAPORIZATION RATE DURING A CRYSTAL GROWTH PROCESS | Non-Final OA | GlobalWafers Co., Ltd. |
| 18666359 | SYSTEMS AND METHODS FOR COOLING A CHUNK POLYCRYSTALLINE FEEDER | Non-Final OA | GlobalWafers Co., Ltd. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy82.1% of resolved applications examined by Robert M Kunemund were allowed (1,346 resolved cases), compared with 50.6% across Art Unit 1714 over the last five years.
This examiner's interview lift is +13.2 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Robert M Kunemund took 1,071 days on average from filing to allowance.
Robert M Kunemund examines applications in Art Unit 1714 in Tech Center 2800 (Semiconductors, Circuits & Optics).
