Listed by the USPTO as MAI, ANH D
Tech Center 2800 • Art Units: 2800 2814 2829 2889 2893
This examiner grants 38% of resolved cases
MAI, ANH D is assigned to Tech Center 2800 and art unit 2800. The profile contains 709 resolved cases, with an allowance rate of 37.7%. The median days to allowance is 1339, indicating that applicants should prepare for extended prosecution and preserve flexibility in amendment and continuation decisions.
The interview lift is 9.6%, so interviews show a positive association with allowance outcomes in the reported matters. The listed companies are Taiwan Semiconductor Manufacturing Company, Ltd., Samsung Display Co., Ltd., and Samsung Electronics Co., Ltd. The listed firms are BIRCH STEWART KOLASCH & BIRCH, LLP, CANTOR COLBURN LLP, and Harrity & Harrity, LLP. The portfolio concentration in semiconductor and display technology makes technical claim precision especially important.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18239248 | INTEGRATED CIRCUIT DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18329784 | SEMICONDUCTOR DEVICE HAVING CONTACT PLUG WITH AN UPPER CONDUCTIVE PATTERN FORMED ON AN UPPER SURFACE OF A LOWER CONDUCTIVE PATTERN | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18110488 | POWER MANAGEMENT INTEGRATED CIRCUIT AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18802243 | A TRENCH-TYPE POWER SEMICONDUCTOR DEVICE HAVING P-TYPE REGIONS AND N-TYPE REGIONS ALTERNATIVELY FORMED UNDER AND CONTACTING THE BOTTOM OF TRENCH GATE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18176130 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE | Final Rejection | FUJI ELECTRIC CO., LTD. |
| 18238714 | DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 18237044 | DISPLAY APPARATUS | Non-Final OA | SAMSUNG DISPLAY CO., LTD. |
| 18139884 | FLEXIBLE WIRING BOARD HAVING SIGNAL LINE FORMED BETWEEN TWO INORGANIC LAYERS AND COVERED BY ORGANIC LAYERS OVER THE INORGANIC LAYERS | Non-Final OA | Samsung Display Co., Ltd. |
| 17717493 | DISPLAY DEVICE HAVING A CAPPING LAYER WITH A THICKNESS OF ABOUT 280 ANGSTROMS TO ABOUT 360 ANGSTROMS DISPOSED ON AN EMISSION ELEMENT AN ANTI-REFLECTION LAYER DISPOSED ON THE CAPPING LAYER AND A FILLING LAYER HAVING A REFRACTIVE INDEX OF ABOUT 1.3 TO ABOUT 1.6 DISPOSED ON THE ANTI-REFLECTION LAYER | Final Rejection | Samsung Display Co., Ltd. |
| 17715700 | DISPLAY APPARATUS INCLUDING AN OXIDE-SEMICONDUCTOR THIN FILM TRANSISTOR FORMED ON A SUBSTRATE HAVING A GATE ELECTRODE OF TWO DIFFERENT MATERIALS STACKED | Non-Final OA | Samsung Display Co., Ltd. |
| 18577717 | SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC EQUIPMENT | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18366441 | LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR INTEGRATION IN INTEGRATED CIRCUIT (IC) PLATFORM | Final Rejection | QUALCOMM Incorporated |
| 18446919 | FIELD EFFECT TRANSISTOR HAVING A PLURALITY OF P-TYPE DEEP LAYERS AND PLURALITY OF N-TYPE DEEP LAYERS LATERALLY AND ALTERNATIVELY FORMED UNDER P-TYPE BODY LAYER EXTENDING IN A SECOND DIRECTION PERPENDICULAR TO THE DIRECTION OF THE TRENCH | Non-Final OA | DENSO CORPORATION |
| 18583892 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Kioxia Corporation |
| 17559296 | A SEMICONDUCTOR DEVICE HAVING A DIFFUSION BREAK STRUCTURE WITH A FIRST WIDTH LESS THAN A WIDTH OF GATE TERMINAL | Non-Final OA | International Business Machines Corporation |
| 18401948 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18447340 | TRANSFER FIN FIELD EFFECT TRANSISTOR (finFET) OF A PIXEL SENSOR HAVING A PLURALITY OF CHANNEL FINS COUPLING THE N-TYPE REGION OF A PHOTODIODE TO AN EXTENSION REGION OF FLOATING DIFFUSION (FD) | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17862422 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17303524 | METHOD FOR FORMING DEEP TRENCH ISOLATION IN AN IMAGING SENSOR BY SEPARATELY FORMING FIRST SET OF DEEP TRENCHES IN FIRST DIRECTION THEN FORMING SECOND SET OF DEEP TRENCHES IN SECOND DIRECTION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18781476 | SEMICONDUCTOR DEVICE WITH INTEGRATED METAL-INSULATOR-METAL CAPACITORS | Final Rejection | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 16585859 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 18226988 | PRINTED CIRCUIT BOARD | Non-Final OA | SAMSUNG ELECTRO-MECHANICS CO., LTD. |
| 18227969 | POWER DEVICES WITH IMPROVED ON-RESISTANCE | Final Rejection | Purdue Research Foundation |
| 18952927 | TRENCHED SCHOTTKY STRUCTURE HAVING A DOPED REGION LOCATED AT A CENTRAL POSITION BETWEEN FIRST TRENCH AND SECOND TRENCH STRUCTURES | Non-Final OA | Diodes Incorporated |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy37.7% of resolved applications examined by Anh D Mai were allowed (709 resolved cases), compared with 69.7% across Art Unit 2800 over the last five years.
This examiner's interview lift is +9.6 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Anh D Mai took 1,339 days on average from filing to allowance.
Anh D Mai examines applications in Art Unit 2800 in Tech Center 2800 (Semiconductors, Circuits & Optics).
