Tech Center 2800 • Art Units: 2828 2872 2873 2898
This examiner grants 72% of resolved cases
Jessica S. Manno has resolved 202 cases in Art Unit 2828, which is part of Tech Center 2800. Her allowance rate is 72.3%, showing a favorable grant rate for applications in her docket. The median days to allowance for these applications is 954, providing a clear expectation for the time required to reach a successful conclusion. This 954-day pendency is a key benchmark for practitioners in Art Unit 2828.
The data indicates that interviews are a productive strategy when working with Manno. She has an interview lift of 27.3%, which quantifies the increase in allowance probability following an interview. Given the 72.3% baseline allowance rate and 202 resolved cases, the 27.3% lift highlights the value of direct communication as a means to overcome rejections and move applications toward a grant. Practitioners should use this 27.3% lift to improve their chances of success beyond the 72.3% baseline.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 17738364 | ANTI-REFLECTIVE COATINGS FOR PHOTODIODES OF IMAGE SENSOR PIXELS | Non-Final OA | Apple Inc. |
| 18683889 | VERTICAL CAVITY LIGHT-EMITTING ELEMENT | Non-Final OA | STANLEY ELECTRIC CO., LTD. |
| 18292062 | RADIATION-EMITTING SEMICONDUCTOR BODY, LASER DIODE AND LIGHT-EMITTING DIODE | Non-Final OA | ams-OSRAM International GmbH |
| 17824915 | EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18275680 | LASER MEDIUM UNIT AND LASER DEVICE | Final Rejection | HAMAMATSU PHOTONICS K.K. |
| 18564335 | SYSTEM FOR ACTIVELY CONTROLLING A CAVITY LENGTH OF AN OPTICAL ASSEMBLY | Non-Final OA | CYMER, LLC |
| 18131571 | Vertical Cavity Surface-Emitting Laser with Independent Definition of Current and Light Confinement | Final Rejection | II-VI Delaware, Inc. |
| 18060203 | OPTICAL DEVICE THAT INCLUDES AN EPITAXIAL LAYER STRUCTURE WITH TRENCHES AND GROOVES | Final Rejection | Lumentum Operations LLC |
| 18510864 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME | Non-Final OA | CHANGXIN MEMORY TECHNOLOGIES, INC. |
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