Listed by the USPTO as MCCLURE, CHRISTINA D
Tech Center 4100 • Art Units: 1718 1779 1784 2875 2898 4100
This examiner grants 30% of resolved cases
MCCLURE, CHRISTINA D works in Tech Center 4100 and Art Unit 1718. Her profile covers 391 resolved cases, with a 29.9% allowance rate and a median of 1246 days to allowance. The low allowance rate and extended median timing indicate a prosecution environment in which claim development and response planning may require particular care.
The interview lift is 33.1%, showing a positive association between interviews and allowance outcomes. The listed companies are ASM IP Holding B.V., Kokusai Electric Corporation, and Applied Materials Inc. The leading firms are Snell & Wilmer (ASM IP Holding B.V.), VOLPE KOENIG, and EDELL, SHAPIRO & FINNAN, LLC. This recurring participant history can assist counsel in identifying relevant experience, but does not replace application-specific analysis.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19283552 | METHOD OF FORMING LOW-K MATERIAL LAYER, STRUCTURE INCLUDING THE LAYER, AND SYSTEM FOR FORMING SAME | Non-Final OA | ASM IP Holding B.V. |
| 19175324 | METHOD OF FORMING A STRUCTURE INCLUDING CARBON MATERIAL, STRUCTURE FORMED USING THE METHOD, AND SYSTEM FOR FORMING THE STRUCTURE | Non-Final OA | ASM IP Holding B.V. |
| 18930631 | METHOD FOR FORMING A RARE-EARTH-CONTAINING LAYER, APPARATUS, AND STRUCTURE | Final Rejection | ASM IP Holding B.V. |
| 18642877 | SYSTEMS AND METHODS FOR DEPOSITING MATERIAL LAYERS ONTO SUBSTRATES | Non-Final OA | ASM IP Holding B.V. |
| 18598145 | METHOD OF FORMING DIELECTRIC MATERIAL LAYER USING PLASMA | Non-Final OA | ASM IP Holding B.V. |
| 17990776 | METHOD OF FORMING SIOC AND SIOCN LOW-K SPACERS | Final Rejection | ASM IP Holding B.V. |
| 18847683 | REDUCING CAPACITANCE IN SEMICONDUCTOR DEVICES | Final Rejection | Lam Research Corporation |
| 18000562 | IN-FEATURE WET ETCH RATE RATIO REDUCTION | Final Rejection | Lam Research Corporation |
| 18838595 | SUBTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Final Rejection | TOKYO ELECTRON LIMITED |
| 18947949 | Selective metal Capping with Metal Halide enhancement | Non-Final OA | Applied Materials, Inc. |
| 18758099 | METHODS FOR SELECTIVE DEPOSITION USING SELF-ASSEMBLED MONOLAYERS | Non-Final OA | Applied Materials, Inc. |
| 17950946 | PLASMA-ENHANCED MOLYBDENUM DEPOSITION | Final Rejection | Applied Materials, Inc. |
| 17748329 | METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE | Final Rejection | Applied Materials, Inc. |
| 18454702 | METHOD OF PHYSICAL VAPOR DEPOSITION WITH INTERMIXING REDUCTION | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18037407 | TRANSPARENT AND HIGH-K THIN FILM PREPARED BY PULSED LASER DEPOSITION | Final Rejection | THE UNIVERSITY OF HONG KONG |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy29.9% of resolved applications examined by Christina D Mcclure were allowed (391 resolved cases), compared with 35.5% across Art Unit 1718 over the last five years.
This examiner's interview lift is +33.1 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Christina D Mcclure took 1,246 days on average from filing to allowance.
Christina D Mcclure examines applications in Art Unit 1718 in Tech Center 4100.
