Listed by the USPTO as WALKE, AMANDA C
Tech Center 1700 • Art Units: 1722 1726 1737 1795
This examiner grants 88% of resolved cases
WALKE, AMANDA C works in Tech Center 1700 and Art Unit 1722, with 1734 resolved cases. The allowance rate is 88.5%, and the median time to allowance is 888 days. Interview lift is 8.6%, indicating a positive but limited association between interviews and allowance outcomes.
Fujifilm Corporation, Shin-Etsu Chemical Co., Ltd., and Samsung SDI Co., Ltd. are the leading companies. WHDA, LLP, SUGHRUE MION, PLLC, and Element IP, PLC are the leading firms. The high allowance rate and substantial case volume support relying on disciplined written prosecution, with interviews used selectively to address specific disputes.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18621915 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE | Non-Final OA | FUJIFILM Corporation |
| 18621906 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE | Non-Final OA | FUJIFILM Corporation |
| 18392802 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | Non-Final OA | FUJIFILM Corporation |
| 18467889 | TRANSFER FILM AND PHOTOSENSITIVE COMPOSITION | Non-Final OA | FUJIFILM Corporation |
| 18483895 | ORGANIC SALT, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18607213 | ORIGINAL, METHOD OF DETERMINING PATTERN OF ORIGINAL, AND METHOD OF EXPOSING | Non-Final OA | CANON KABUSHIKI KAISHA |
| 18546879 | HALOGEN-AND ALIPHATIC-CONTAINING ORGANOTIN PHOTORESISTS AND METHODS THEREOF | Final Rejection | Lam Research Corporation |
| 18617447 | METHOD OF FORMING PATTERNS | Non-Final OA | SAMSUNG SDI CO., LTD. |
| 18379933 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER USING THE SAME AND COLOR FILTER | Final Rejection | SAMSUNG SDI CO., LTD. |
| 18563382 | PHOTORESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING DEVICE | Non-Final OA | Tokyo Electron Limited |
| 18383101 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 18380970 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | Final Rejection | Shin-Etsu Chemical Co., Ltd. |
| 18370555 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | Final Rejection | Shin-Etsu Chemical Co., Ltd. |
| 18367157 | ONIUM SALT TYPE MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | Final Rejection | Shin-Etsu Chemical Co., Ltd. |
| 18229863 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 18484051 | PHOTORESIST COMPOSITION | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18687238 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, MULTILAYERED PRINTED WIRING BOARD, SEMICONDUCTOR PACKAGE, AND METHOD FOR PRODUCING MULTILAYERED PRINTED WIRING BOARD | Non-Final OA | Resonac Corporation |
| 18023952 | PHOTOSENSITIVE RESIN COMPOSITION, PERMANENT RESIST, METHOD FOR FORMING PERMANENT RESIST, AND METHOD FOR INSPECTING PERMANENT RESIST CURED FILM | Non-Final OA | RESONAC CORPORATION |
| 18578299 | METHOD FOR GENERATING MASK PATTERN | Non-Final OA | ASML NETHERLANDS B.V. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy88.5% of resolved applications examined by Amanda C Walke were allowed (1,734 resolved cases), compared with 60.4% across Art Unit 1722 over the last five years.
This examiner's interview lift is +8.6 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Amanda C Walke took 888 days on average from filing to allowance.
Amanda C Walke examines applications in Art Unit 1722 in Tech Center 1700 (Chemistry & Materials).
