1 pending office actions
| App # | Title | Examiner | Art Unit | Status | Filed |
|---|---|---|---|---|---|
| 17811639 | Semiconductor Device and Method of Forming Sacrificial Heteroepitaxy Interface to Provide Substantially Defect-Free Silicon Carbide Substrate | DAS, PINAKI | 2898 | Final Rejection | Jul 11, 2022 |
IP Author helps IP teams respond to office actions faster with AI-generated responses, examiner analytics, and prosecution intelligence.
Start Free Trial