2 pending office actions • 1 art units • 2 examiners • 0 of 2 (0%) have an AI response strategy ready • 4 patents granted in the last 365 days
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| Multi-statute (no §101) | 2 (100%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| SUN, YU-HSI DAVID | 1 | 77.3% | +8.5% |
| DAS, PINAKI | 1 | 89.1% | +8.7% |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 2 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18622990 | Semiconductor Device and Method of Forming MEMS Super-Junction Metal Oxide Semiconductor Using Epitaxial Layer | SUN, YU-HSI DAVID | — |
| 17822395 | Semiconductor Device and Method of Providing Rad Hard Power Transistor with 1200v Breakdown Voltage | DAS, PINAKI | — |
| Art Unit | Apps |
|---|---|
| 2898 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18622990 | Semiconductor Device and Method of Forming MEMS Super-Junction Metal Oxide Semiconductor Using Epitaxial Layer | SUN, YU-HSI DAVID | — | §102§103 | Non-Final OA | — | Pending | Mar 31, 2024 |
| 17822395 | Semiconductor Device and Method of Providing Rad Hard Power Transistor with 1200v Breakdown Voltage | DAS, PINAKI | 2898 | §102§103§112 | Non-Final OA | — | Pending | Aug 25, 2022 |
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