Listed by the USPTO as ALANKO, ANITA KAREN
Tech Center 3700 • Art Units: 1713 1716 1792 2884 2896 3794
This examiner grants 70% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18640332 | SUBSTRATE PROCESSING APPARATUS AND A SUBSTRATE PROCESSING METHOD USING THE SAME | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18698175 | METHOD FOR PREPARING METAL MESH AND METHOD FOR PREPARING ANTENNA | Final Rejection | BOE Technology Group Co., Ltd. |
| 18836734 | SYSTEMS AND METHODS FOR REDUCING VARIABILITY IN FEATURES OF A SUBSTRATE | Final Rejection | Lam Research Corporation |
| 18688600 | Microfabricated Multiemitter Electrospray Thrusters | Final Rejection | The Regents of the University of California |
| 18764779 | SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18805783 | SELECTIVE ETCHING OF SILICON-AND-GERMANIUM-CONTAINING MATERIAL | Non-Final OA | Applied Materials, Inc. |
| 18783581 | METHOD OF INTEGRATED COPPER OXIDE REMOVAL AND LOW K REPAIR PROCESS | Non-Final OA | Applied Materials, Inc. |
| 18636684 | CONTROLLED ETCH OF SILICON NITRIDE MATERIAL | Non-Final OA | Applied Materials, Inc. |
| 18115269 | PROCESSING METHODS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE ROUGHNESS | Non-Final OA | Applied Materials, Inc. |
| 18112252 | TREATMENTS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE ROUGHNESS | Non-Final OA | Applied Materials, Inc. |
| 18423888 | OPTICAL SIGNAL REDIRECTION STRUCTURE FOR PHOTONICS DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18393632 | Plasma Etching Method and Apparatus | Non-Final OA | SPTS Technologies Limited |
| 18887935 | ETCHANT COMPOSITIONS AND RELATED METHODS | Non-Final OA | ENTEGRIS, INC. |
| 17784228 | CHEMICAL-MECHANICAL POLISHING COMPOSITION AND CHEMICAL-MECHANICAL POLISHING METHOD USING THE SAME | Non-Final OA | ENTEGRIS, INC. |
| 18616347 | POLISHING COMPOSITIONS AND METHODS OF USE THEREOF | Final Rejection | Fujifilm Electronic Materials U.S.A., Inc. |
| 18849771 | POLISHING COMPOSITION | Non-Final OA | FUJIMI INCORPORATED |
| 18696793 | POLISHING COMPOSITION | Final Rejection | FUJIMI INCORPORATED |
| 18605224 | POLISHING COMPOSITION, POLISHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE | Final Rejection | FUJIMI INCORPORATED |
| 18688101 | POLISHING COMPOSITION | Non-Final OA | FUJIMI INCORPORATED |
| 18332233 | ETCHING GAS COMPOSITION, SUBSTRATE PROCESSING APPARATUS, AND PATTERN FORMING METHOD USING THE ETCHING GAS COMPOSITION | Final Rejection | SEMES CO., LTD. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy69.9% of resolved applications examined by Anita Karen Alanko were allowed (711 resolved cases), compared with 62.4% across Art Unit 1713 over the last five years.
This examiner's interview lift is -16.1 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Anita Karen Alanko took 1,091 days on average from filing to allowance.
Anita Karen Alanko examines applications in Art Unit 1713 in Tech Center 3700 (Medical Devices & Mechanical Engineering).
