Listed by the USPTO as ANYA, IGWE U
Tech Center 2800 • Art Units: 2891
This examiner grants 85% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18628220 | SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18781169 | BONDING METHOD, BONDING APPARATUS AND ARTICLE MANUFACTURING METHOD | Non-Final OA | CANON KABUSHIKI KAISHA |
| 18314230 | BIDIRECTIONAL POWER TRANSISTOR AND METHOD FOR PRODUCING A BIDIRECTIONAL POWER TRANSISTOR | Final Rejection | Robert Bosch GmbH |
| 18409010 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME | Final Rejection | Samsung Display Co., Ltd. |
| 18853110 | DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY PANEL AND DISPLAY DEVICE | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18240318 | MAGNETIC INDUCTORS FOR SEMICONDUCTOR PACKAGING | Non-Final OA | Intel Corporation |
| 18346098 | FIDUCIALS WITH UNDERLYING DUMMY METALLIZATION FOR INTEGRATED CIRCUIT DEVICE ALIGNMENT | Non-Final OA | Intel Corporation |
| 18217056 | FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY | Non-Final OA | Intel Corporation |
| 18852619 | SEMICONDUCTOR DEVICE | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18793709 | POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | HYUNDAI MOBIS CO., LTD. |
| 18852819 | WIRING BOARD AND SEMICONDUCTOR DEVICE | Non-Final OA | KYOCERA Corporation |
| 18692226 | METHOD FOR PRODUCING A GROWTH SUBSTRATE, GROWTH SUBSTRATE, AND METHOD FOR PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS | Non-Final OA | ams-OSRAM International GmbH |
| 18852660 | SEMICONDUCTOR FILM, AND METHOD FOR PRODUCING SEMICONDUCTOR FILM | Non-Final OA | IDEMITSU KOSAN CO.,LTD. |
| 18683703 | NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME | Final Rejection | SHIN-ETSU HANDOTAI CO., LTD. |
| 18750937 | MEMORY DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18655769 | SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18654441 | SEMICONDUCTOR DEVICE PACKAGES AND METHODS OF FORMATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company , Ltd. |
| 18421026 | SEMICONDUCTOR DIE AND WAFER BONDING CRACK DETECTOR STRUCTURES AND METHODS OF FORMING SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company LTD |
| 18402035 | CAPACITOR STRUCTURE AND METHODS OF FORMING THE SAME | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18909114 | RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING RADIATION-EMITTING SEMICONDUCTOR COMPONENT | Non-Final OA | OSRAM OLED GmbH |
| 18806055 | PACKAGE SUBSTRATE AND FABRICATING METHOD THEREOF | Non-Final OA | SILICONWARE PRECISION INDUSTRIES CO., LTD. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy85.1% of resolved applications examined by Igwe U Anya were allowed (964 resolved cases), compared with 69.5% across Art Unit 2891 over the last five years.
This examiner's interview lift is -3.8 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Igwe U Anya took 925 days on average from filing to allowance.
Igwe U Anya examines applications in Art Unit 2891 in Tech Center 2800 (Semiconductors, Circuits & Optics).
