Listed by the USPTO as BELL, LAUREN R
Tech Center 2800 • Art Units: 2811 2816 2818 2896
This examiner grants 40% of resolved cases
BELL, Lauren R has resolved 392 cases in Tech Center 2800 and shows a 40.3% allowance rate. The 32.8% interview lift indicates that direct examiner engagement may materially improve outcomes where claims face substantial examination challenges. The median time to allowance is 1266 days, so applicants should prepare for a lengthy process and develop interview goals early.
Samsung Display Co., Ltd., Semiconductor Energy Laboratory Co., Ltd., and Taiwan Semiconductor Manufacturing Company, Ltd. are the leading companies. CANTOR COLBURN LLP, Harrity & Harrity, LLP, and JCIPRNET are the leading firms. In art unit 2811, claim clarity and technically focused interviews should be central to prosecution planning.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18650251 | SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18501120 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 17864716 | INTEGRATED CIRCUIT DEVICE | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18404720 | DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | LG Display Co., Ltd. |
| 17994684 | Organic Light Emitting Diode Display | Final Rejection | LG Display Co., Ltd. |
| 18300228 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., Ltd. |
| 18106408 | DISPLAY APPARATUS | Final Rejection | SAMSUNG DISPLAY CO., LTD. |
| 18082515 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 17421367 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | Samsung Display Co., Ltd. |
| 18729992 | LIGHT-EMITTING DEVICE, DISPLAY SUBSTRATE AND DISPLAY APPARATUS | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18250792 | DISPLAY PANEL AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | Final Rejection | BOE Technology Group Co., Ltd. |
| 18624483 | Epitaxial wafer, Method of manufacturing the epitaxial wafer, and Method of manufacturing a semiconductor device using the epitaxial wafer | Non-Final OA | UIF (University Industry Foundation), Yonsei University |
| 18429571 | Electronic Device | Non-Final OA | InnoLux Corporation |
| 18359891 | METHOD OF MANUFACTURING ELECTRONIC DEVICE | Final Rejection | Innolux Corporation |
| 18309308 | SEMICONDUCTOR DEVICES WITH DOUBLE-SIDED FANOUT CHIP PACKAGES | Non-Final OA | Avago Technologies International Sales Pte. Limited |
| 18538161 | SEMICONDUCTOR DEVICE | Non-Final OA | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18538192 | SEMICONDUCTOR DEVICE | Non-Final OA | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18234414 | SEMICONDUCTOR DEVICE | Final Rejection | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18234410 | SEMICONDUCTOR DEVICE | Final Rejection | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18527971 | COMPRESSIVE STRAIN IN STACKED NANOSHEET FIELD EFFECT TRANSISTOR | Final Rejection | International Business Machines Corporation |
| 17542662 | SELECTIVE DIPOLE LAYER MODULATION USING TWO-STEP INNER SPACER | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18355238 | IMAGE SENSING DEVICE | Final Rejection | SK hynix Inc. |
| 17406953 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 18599702 | CHANNEL EXTENSION STRUCTURES FOR SEMICONDUCTOR DEVICES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17810626 | PACKAGE STRUCTURE WITH FAN-OUT STRUCTURE | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17881128 | SEMICONDCUTOR PACKAGES AND METHODS OF FORMING THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18730830 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE | Non-Final OA | NICHIA CORPORATION |
| 18299282 | LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT, AND LIGHT-EMITTING DEVICE | Final Rejection | NICHIA CORPORATION |
| 18793625 | ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METHOD OF MAKING THE SAME | Non-Final OA | Purdue Research Foundation |
| 18885906 | NANOSHEET FIELD-EFFECT TRANSISTORS DEPOPULATED OF NANOSHEET CHANNEL LAYERS | Non-Final OA | GlobalFoundries U.S. Inc. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy40.3% of resolved applications examined by Lauren R Bell were allowed (392 resolved cases), compared with 72.2% across Art Unit 2811 over the last five years.
This examiner's interview lift is +32.8 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Lauren R Bell took 1,266 days on average from filing to allowance.
Lauren R Bell examines applications in Art Unit 2811 in Tech Center 2800 (Semiconductors, Circuits & Optics).
