Listed by the USPTO as COSGROVE, JAYSON D
Tech Center 2800 • Art Units: 1737 2818
This examiner grants 53% of resolved cases
COSGROVE, JAYSON D works in Tech Center 2800 and Art Unit 1737. The profile includes 132 resolved cases, a 53.0% allowance rate, and a 1392-day median to allowance. The interview lift is 33.9%, indicating that interviews may be useful when paired with careful claim amendments and arguments addressing the examiner's stated grounds.
The listed companies are Hoya Corporation, Shin-Etsu Chemical Co., Ltd., and Samsung Electronics Co., Ltd. The listed firms are SUGHRUE MION, PLLC, Element IP, PLC, and GREENBLUM & BERNSTEIN, P.L.C. The case volume is limited, so practitioners should use the profile as targeted context for prosecution planning.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 17144259 | CHEMICAL LIQUID, KIT, PATTERN FORMING METHOD, CHEMICAL LIQUID MANUFACTURING METHOD, AND CHEMICAL LIQUID STORAGE BODY | Non-Final OA | FUJIFILM Corporation |
| 18403030 | TOP MODULE AND EXPOSING APPARATUS INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18543114 | PHOTORESIST COMPOSITION | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18145038 | PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOTORESIST | Final Rejection | Intel Corporation |
| 18624406 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | Non-Final OA | SAMSUNG SDI CO., LTD. |
| 18588606 | HARDMASK COMPOSITION, HARDMASK LAYER, AND METHOD OF FORMING PATTERNS | Non-Final OA | SAMSUNG SDI CO., LTD. |
| 18426723 | SULFONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 18388665 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | Final Rejection | Shin-Etsu Chemical Co., Ltd. |
| 18110838 | METHOD OF MANUFACTURING PHOTO MASKS | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18626242 | RESIST UNDERLAYER COMPOSITION | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18273123 | PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR POLYIMIDE CURED FILM USING SAME, AND POLYIMIDE CURED FILM | Final Rejection | ASAHI KASEI KABUSHIKI KAISHA |
| 18348313 | METHOD OF MANUFACTURING PATTERNED BASE MEMBER, PROCESSING METHOD, AND METHOD OF MANUFACTURING LASER ELEMENT | Final Rejection | NICHIA CORPORATION |
| 18568489 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | Final Rejection | TOKYO OHKA KOGYO CO., LTD. |
| 17805188 | CLEANING COMPOSITION, METHOD OF CLEANING COATING FILM FORMING DEVICE, METHOD OF PRODUCING SUBSTRATE FOR LITHOGRAPHY, AND METHOD OF FORMING RESIST PATTERN | Non-Final OA | TOKYO OHKA KOGYO CO., LTD. |
| 18277648 | SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | HOYA CORPORATION |
| 18266057 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | HOYA CORPORATION |
| 18039192 | MULTILAYER REFLECTIVE FILM-EQUIPPED SUBSTRATE, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | Final Rejection | HOYA CORPORATION |
| 18025461 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | HOYA CORPORATION |
| 18374041 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION | Final Rejection | JSR CORPORATION |
| 18372163 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION | Final Rejection | JSR CORPORATION |
| 18271556 | REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK | Non-Final OA | TEKSCEND PHOTOMASK CORP. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy53.0% of resolved applications examined by Jayson D Cosgrove were allowed (132 resolved cases), compared with 63.4% across Art Unit 1737 over the last five years.
This examiner's interview lift is +33.9 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Jayson D Cosgrove took 1,392 days on average from filing to allowance.
Jayson D Cosgrove examines applications in Art Unit 1737 in Tech Center 2800 (Semiconductors, Circuits & Optics).
