Listed by the USPTO as CRITE, ANTONIO B
Tech Center 2800 • Art Units: 2800 2817 2891 2892
This examiner grants 82% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18586112 | 3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL STRUCTURES, SOURCE/DRAIN REGIONS, AND GATE STRUCTURES AT DIFFERENT LEVELS | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18786173 | Display Device | Non-Final OA | LG Display Co., Ltd. |
| 18576110 | DISPLAY SYSTEM | Final Rejection | SONY GROUP CORPORATION |
| 18358544 | SEMICONDUCTOR DEVICE | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18028299 | ARRAY SUBSTRATE AND ELECTRONIC APPARATUS | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18558233 | DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE | Non-Final OA | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18523129 | THREE-DIMENSIONAL MEMORY DEVICE WITH VARIABLE WORD LINE VIA CONTACT DENSITY AS FUNCTION OF CONTACT DEPTH AND METHODS OF FORMING THE SAME | Non-Final OA | WESTERN DIGITAL TECHNOLOGIES, INC., |
| 18736026 | SELF-ALIGNED CONTACTS IN THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18513260 | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF AND MEMORY SYSTEM | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18777885 | CONDUCTIVE BOND STRUCTURE TO INCREASE MEMBRANE SENSITIVTY IN MEMS DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18669948 | SEMICONDUCTOR STRUCTURE WITH REDUCED BODY LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18662168 | HIGHLY PHYSICAL ION RESISTIVE SPACER TO DEFINE CHEMICAL DAMAGE FREE SUB 60NM MRAM DEVICES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18603779 | INTEGRATED CIRCUIT PACKAGES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18784872 | Structure and Method for MRAM Devices with a Slot Via | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18596123 | MECHANISMS FOR GROWING EPITAXY STRUCTURE OF FINFET DEVICE | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 17875206 | HARDENED INTERLAYER DIELECTRIC LAYER | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18615720 | LIGHT EMITTING ELEMENT PACKAGE | Non-Final OA | SEOUL VIOSYS CO., LTD. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy81.6% of resolved applications examined by Antonio B Crite were allowed (462 resolved cases), compared with 69.7% across Art Unit 2800 over the last five years.
This examiner's interview lift is -13.0 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Antonio B Crite took 871 days on average from filing to allowance.
Antonio B Crite examines applications in Art Unit 2800 in Tech Center 2800 (Semiconductors, Circuits & Optics).
