Listed by the USPTO as EOFF, ANCA
Tech Center 2800 • Art Units: 1722 1724 1737 1795 1796 2817
This examiner grants 80% of resolved cases
Anca Eoff is an examiner in Art Unit 1722 of Tech Center 2800, with 1262 resolved cases. She has a high allowance rate of 80.1 percent, which indicates a positive environment for patent applicants. The median days to allowance is 986, providing a reasonable timeline for successful prosecution. The interview lift is 10.8 percent, suggesting that interviews provide a helpful boost to the already strong 80.1 percent baseline allowance rate.
Top companies such as Shin-Etsu Chemical Co., Ltd., Samsung Electronics Co., Ltd., and Samsung SDI Co., Ltd. are frequently represented in her docket. Active law firms include HARNESS DICKEY (DETROIT), SUGHRUE MION, PLLC, and BIRCH STEWART KOLASCH & BIRCH, LLP. The 1262 resolved cases provide a very stable data set for predicting outcomes in Art Unit 1722. Practitioners should note that the 986 median days to allowance is a central figure for planning. With an 80.1 percent allowance rate and a 10.8 percent interview lift, the examiner's docket shows a consistent trend toward successful resolution for a wide range of corporate applicants.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18439390 | METHOD FOR INSPECTING RESIST COMPOSITION, METHOD FOR PRODUCING RESIST COMPOSITION, AND RESIST COMPOSITION | Non-Final OA | FUJIFILM Corporation |
| 18458609 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | Non-Final OA | FUJIFILM Corporation |
| 18420038 | ORGANOMETALLIC COMPOUND, RESIST COMPOSITION INCLUDING THE SAME AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18527056 | PHOTORESIST COMPOSITION INCLUDING PHOTOSENSITIVE POLYMER AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE | Final Rejection | Samsung Electronics Co., Ltd. |
| 18329976 | ORGANOMETALLIC COMPOUND, RESIST COMPOSITION INCLUDING THE SAME AND PATTERN FORMING METHOD USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18565554 | METHOD FOR USING COMPOSITION COMPRISING ORGANIC ACID COMPOUND, LITHOGRAPHY COMPOSITION COMPRISING ORGANIC ACID COMPOUND, AND METHOD FOR MANUFACTURING RESIST PATTERN | Final Rejection | Merck Patent GmbH |
| 18030854 | CELL MOUNTING JIG FOR PREVENTING DAMAGE TO APPEARANCE OF BATTERY CELL, CELL ALIGNMENT DEVICE AND CELL MOUNTING METHOD | Non-Final OA | LG ENERGY SOLUTION, LTD. |
| 18512626 | METHOD AND SYSTEM FOR CONTROLLING AIR SUPPLY TO FUEL CELL | Non-Final OA | Kia Corporation |
| 18094415 | BATTERY CELL, BATTERY, POWER CONSUMING APPARATUS, AND METHOD AND APPARATUS FOR MANUFACTURING BATTERY CELL | Final Rejection | CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED |
| 18411690 | HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS | Non-Final OA | SAMSUNG SDI CO., LTD. |
| 18003110 | ELECTROLYTE FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING SAME | Non-Final OA | SAMSUNG SDI CO., LTD. |
| 18003717 | ELECTROLYTE FOR LITHIUM BATTERY, AND LITHIUM BATTERY COMPRISING SAME | Non-Final OA | Samsung SDI Co., Ltd. |
| 18597253 | ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 18440742 | Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18380454 | Positive Resist Material And Patterning Process | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18450670 | Polymer, Resist Composition, And Patterning Process | Final Rejection | SHIN-ETSU CHEMICAL CO., LTD. |
| 18204805 | METHOD TO OPTIMIZE POST DEPOSITION BAKING CONDITION OF PHOTO RESISTIVE MATERIALS | Non-Final OA | Applied Materials, Inc. |
| 18526121 | METHOD OF SMOOTHENING PROFILE OF PHOTORESIST | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18385563 | ADDITIVES FOR METALLIC PHOTORESIST | Non-Final OA | Taiwan Semiconductor Manufacturing Company Ltd |
| 18694200 | PHOTOSENSITIVE COMPOSITION | Non-Final OA | TOKYO OHKA KOGYO CO., LTD. |
| 18460104 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | Final Rejection | TOKYO OHKA KOGYO CO., LTD. |
| 18542862 | DIELECTRIC FILM FORMING COMPOSITION CONTAINING ACYL GERMANIUM COMPOUND | Non-Final OA | Fujifilm Electronic Materials U.S.A., Inc. |
| 18352031 | COMPOSITE COVER FOR A BATTERY PACK OR A BATTERY MODULE FOR REDUCING THERMAL PROPAGATION RUNAWAY AND MITIGATING ARCING | Non-Final OA | GM Global Technology Operations LLC |
| 18460842 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | Final Rejection | SUMITOMO CHEMICAL COMPANY, LIMITED |
| 18687722 | COMPOSITION FOR SPIN-ON CARBON FILM FORMATION, METHOD FOR PRODUCING COMPOSITION FOR SPIN-ON CARBON FILM FORMATION, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN FORMATION METHOD, AND CIRCUIT PATTERN FORMATION METHOD | Non-Final OA | Mitsubishi Gas Chemical Company, Inc. |
| 18018983 | ELECTRODE PLATE AND PREPARATION METHOD THEREFOR, AND BATTERY | Non-Final OA | EVE ENERGY CO., LTD. |
| 18422098 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | Non-Final OA | JSR CORPORATION |
| 18239399 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | Non-Final OA | JSR CORPORATION |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy80.1% of resolved applications examined by Anca Eoff were allowed (1,262 resolved cases), compared with 60.4% across Art Unit 1722 over the last five years.
This examiner's interview lift is +10.8 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Anca Eoff took 986 days on average from filing to allowance.
Anca Eoff examines applications in Art Unit 1722 in Tech Center 2800 (Semiconductors, Circuits & Optics).
