Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2814 2818
This examiner grants 0% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18618354 | INTEGRATING NITRIDE STRESS COMPENSATION LAYERS FOR THICK OXIDE WAFER CREATION | Non-Final OA | Tokyo Electron Limited |
| 18587910 | GATE CONTACT OVER THE EDGE OF THE GATE CHANNEL | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18736843 | METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE INCLUDING NITROGEN TREATMENT AND SEMICONDUCTOR STRUCTURE THEREOF | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18719223 | SEMICONDUCTOR DEVICE | Non-Final OA | SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy