Prosecution Insights
Prosecution Insights
4 pending office actions • 0 art units • 4 examiners • 0 of 4 (0%) have an AI response strategy ready
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §102 only | 1 (25%) |
| §112 only | 3 (75%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| JUNG, MICHAEL YOO LIM | 1 | 82.5% | +10.6% |
| BOEGEL, CHEVY JACOB | 1 | 89.4% | +5.0% |
| RAHMAN, MOIN M | 1 | 86.9% | +14.3% |
| MOJADDEDI, OMAR F | 1 | 89.3% | +10.8% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 4 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18678698 | THREE-DIMENSIONAL STACKED DRAM DEVICE WITH SUB 4F2 STRUCTURE CELLS | JUNG, MICHAEL YOO LIM | — |
| 18678674 | DRAM DEVICE INCLUDING LOW CAPACITANCE BIT LINE AND SWITCHING INSULATING LAYER | BOEGEL, CHEVY JACOB | — |
| 18678912 | HIGH BANDWIDTH MEMORY WITH SUB 4F2 CELLS | RAHMAN, MOIN M | — |
| 18678777 | DRAM DEVICE WITH SUB 4F2 STRUCTURE COMPRISING SWITCHING INSULATING LAYER AND MULTILAYER STRUCTURE OF WORD LINE | MOJADDEDI, OMAR F | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 3 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18678698 | THREE-DIMENSIONAL STACKED DRAM DEVICE WITH SUB 4F2 STRUCTURE CELLS | JUNG, MICHAEL YOO LIM | — |
| 18678912 | HIGH BANDWIDTH MEMORY WITH SUB 4F2 CELLS | RAHMAN, MOIN M | — |
| 18678777 | DRAM DEVICE WITH SUB 4F2 STRUCTURE COMPRISING SWITCHING INSULATING LAYER AND MULTILAYER STRUCTURE OF WORD LINE | MOJADDEDI, OMAR F | — |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18678698 | THREE-DIMENSIONAL STACKED DRAM DEVICE WITH SUB 4F2 STRUCTURE CELLS | JUNG, MICHAEL YOO LIM | — | §112 | Non-Final OA | — | Pending | May 30, 2024 |
| 18678674 | DRAM DEVICE INCLUDING LOW CAPACITANCE BIT LINE AND SWITCHING INSULATING LAYER | BOEGEL, CHEVY JACOB | — | §102 | Non-Final OA | — | Pending | May 30, 2024 |
| 18678912 | HIGH BANDWIDTH MEMORY WITH SUB 4F2 CELLS | RAHMAN, MOIN M | — | §112 | Non-Final OA | — | Pending | May 30, 2024 |
| 18678777 | DRAM DEVICE WITH SUB 4F2 STRUCTURE COMPRISING SWITCHING INSULATING LAYER AND MULTILAYER STRUCTURE OF WORD LINE | MOJADDEDI, OMAR F | — | §112 | Non-Final OA | — | Pending | May 30, 2024 |
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