Tech Center 2800 • Art Units: 2814
This examiner grants 94% of resolved cases
Aneesa Riaz Baig, an examiner in Tech Center 2800 and Art Unit 2814, has 48 resolved cases. The allowance rate is 93.8%, though the median days to allowance is 1217. This suggests that while success is highly likely, it may require a lengthy period to achieve a final grant under this examiner's review.
The interview lift is 7.9% over the 93.8% baseline, which adds to the already high chances of success. This indicates that interviews are still beneficial, even when the baseline for success is so high. With 48 resolved cases, the examiner has a clear pattern of allowing the vast majority of applications, provided applicants can navigate the 1217-day median timeline. Practitioners should focus on patience and thoroughness, as the 93.8% allowance rate suggests that the examiner is very receptive to patentable subject matter. The 1217-day pendency is the primary hurdle, and while the 7.9% lift is modest, it can still help in finalizing the few cases that do not immediately reach allowance.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18659238 | SEMICONDUCTOR DEVICES HAVING CHANNEL STRUCTURES | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18630286 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18504233 | LIGHT EMITTING ELEMENT AND DISPLAY DEVICE COMPRISING THE LIGHT EMITTING ELEMENT | Final Rejection | Samsung Display Co., LTD. |
| 18458118 | BONDING-TYPE INTERCONNECTION MEMBER | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18421986 | FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 18179431 | SOLDER TRANSFER INTEGRATED CIRCUIT PACKAGING | Final Rejection | International Business Machines Corporation |
| 18593097 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE | Non-Final OA | Kioxia Corporation |
| 17893736 | METHOD OF MAKING A PLURALITY OF 3D SEMICONDUCTOR DEVICES WITH ENHANCED MOBILITY AND CONDUCTIVITY | Final Rejection | Tokyo Electron Limited |
| 18589011 | STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE WITH WORD LINE CONTACT VIA STRUCTURES LOCATED OVER SUPPORT FEATURES AND METHODS OF FORMING THE SAME | Non-Final OA | SANDISK TECHNOLOGIES LLC |
| 18635547 | STACKED HIGH-POWER RF SWITCH | Non-Final OA | GlobalFoundries U.S. Inc. |
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