Listed by the USPTO as DEGRASSE, IAN ISAAC
Tech Center 2800 • Art Units: 2818
This examiner grants 82% of resolved cases
DEGRASSE, IAN ISAAC is a USPTO patent examiner in tech center 2800 and art unit 2818. The record includes 27 resolved cases, with an allowance rate of 81.5%. The median time to allowance is 1308 days. Interview lift is 3.3%, so the reported data provides little evidence that interviews materially change allowance outcomes.
The principal companies are Taiwan Semiconductor Manufacturing Company, Ltd., Samsung Electronics Co., Ltd., and Samsung Display Co., Ltd. The leading firms are JCIPRNET, PVIP, and NORTH AMERICA INTELLECTUAL PROPERTY CORPORATION. Because the case base is limited, applicants should rely on application-specific examination rather than treating the aggregate profile as predictive.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18678374 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18485378 | SEMICONDUCTOR PACKAGE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17846461 | SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18760977 | PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM, AND MOVING BODY | Non-Final OA | CANON KABUSHIKI KAISHA |
| 17954681 | DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 17900742 | DISPLAY DEVICE AND TILED DISPLAY DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 17559342 | FORMATION OF CAVITY SPACER AND SOURCE-DRAIN EPITAXIAL GROWTH FOR SCALING OF GATE-ALL-AROUND TRANSISTORS | Final Rejection | Intel Corporation |
| 18122714 | ELECTRONIC DEVICE | Final Rejection | InnoLux Corporation |
| 18664558 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18256910 | WAFER-LEVEL MANUFACTURE OF OPTICAL PACKAGES | Non-Final OA | ams-OSRAM Asia Pacific Pte. Ltd. |
| 18751616 | STRESSED NANOSHEET CHANNELS | Non-Final OA | International Business Machines Corporation |
| 18517129 | EXTENDED BACKSIDE CONTACT FOR STACKED FIELD-EFFECT TRANSISTOR | Final Rejection | International Business Machines Corporation |
| 17902551 | SiC MOSFET Including Trench with Rounded Corners | Non-Final OA | Applied Materials, Inc. |
| 18593247 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 19288643 | EXTREME ULTRAVIOLET MASK WITH CAPPING LAYER | Final Rejection | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 17745562 | EXTREME ULTRAVIOLET MASK WITH CAPPING LAYER | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18215675 | INTEGRATED CIRCUIT LOW CAPACITANCE ELECTROSTATIC DISCHARGE DIODES | Non-Final OA | Advanced Micro Devices, Inc. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy81.5% of resolved applications examined by Ian Isaac Degrasse were allowed (27 resolved cases), compared with 85.2% across Art Unit 2818 over the last five years.
This examiner's interview lift is +3.3 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Ian Isaac Degrasse took 1,308 days on average from filing to allowance.
Ian Isaac Degrasse examines applications in Art Unit 2818 in Tech Center 2800 (Semiconductors, Circuits & Optics).
