Listed by the USPTO as DINKE, BITEW A
Tech Center 4100 • Art Units: 2141 2812 2823 2826 2896 2897 4100
This examiner grants 73% of resolved cases
DINKE, BITEW A examines applications in Tech Center 4100 and Art Unit 2141. The record contains 792 resolved cases, with a 73.0% allowance rate and a median of 840 days to allowance. The 12.2% interview lift indicates that interviews are associated with a noticeable, though not dominant, improvement in allowance outcomes.
The listed companies are Taiwan Semiconductor Manufacturing Company, Ltd., Samsung Display Co., Ltd., and LG Display Co., Ltd. The leading firms are Haynes and Boone, LLP (24061), Innovation Counsel LLP, and BIRCH STEWART KOLASCH & BIRCH, LLP. The substantial case volume provides a meaningful basis for using this profile in prosecution planning.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18588586 | SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN | Final Rejection | Samsung Electronics Co., Ltd. |
| 18473665 | SEMICONDUCTOR DEVICE | Final Rejection | Samsung Electronics Co., Ltd. |
| 18849265 | DISPLAY DEVICE | Non-Final OA | LG DISPLAY CO., LTD. |
| 18454273 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY APPARATUS COMPRISING THE SAME | Non-Final OA | LG Display Co., Ltd. |
| 18786829 | DISPLAY DEVICE AND METHOD FOR FABRICATION THEREOF | Non-Final OA | Samsung Display Co., LTD. |
| 18735220 | DISPLAY DEVICE | Final Rejection | Samsung Display Co., Ltd. |
| 18663084 | DISPLAY APPARATUS | Final Rejection | Samsung Display Co., Ltd. |
| 18650091 | DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | Samsung Display Co., Ltd. |
| 18558614 | IMAGE DISPLAY DEVICE AND ELECTRONIC DEVICE | Final Rejection | Sony Semiconductor Solutions Corporation |
| 18808992 | WRAP-AROUND SOURCE/DRAIN METHOD OF MAKING CONTACTS FOR BACKSIDE METALS | Non-Final OA | Intel Corporation |
| 18090879 | MICROELECTRONIC PACKAGE STRUCTURES WITH SOLDER JOINT ASSEMBLIES HAVING ROUGHENED BUMP STRUCTURES | Non-Final OA | Intel Corporation |
| 18722110 | Display Device | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18707987 | MEMORY ELEMENT AND MEMORY DEVICE | Non-Final OA | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18668134 | SEMICONDUCTOR DEVICES WITH A CURRENT GAIN LAYOUT | Non-Final OA | Micron Technology, Inc. |
| 18659666 | APPARATUS AND MEMORY DEVICE INCLUDING SPIRAL TSV CONNECTION | Final Rejection | MICRON TECHNOLOGY, INC. |
| 18606182 | MAGNETIC MEMORY DEVICE | Final Rejection | Kioxia Corporation |
| 18468556 | Reduction of Edge Transistor Leakage on N-Type EDMOS and LDMOS Devices | Non-Final OA | Murata Manufacturing Co., Ltd. |
| 18773742 | STRESSED PFET NANOSHEETS | Final Rejection | International Business Machines Corporation |
| 18756004 | WRAP AROUND CONTACT WITH SELF-ALIGNED GATE ISOLATION | Non-Final OA | International Business Machines Corporation |
| 18816403 | SEMICONDUCTOR DEVICE | Non-Final OA | Rohm Co., Ltd. |
| 18416079 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, CORRESPONDING RIBBON, APPARATUS AND DEVICE | Non-Final OA | STMicroelectronics International N.V. |
| 18791279 | INTEGRATED CIRCUIT HAVING STACKED PICK-UP REGIONS | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18785774 | SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS AND METHODS THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18783518 | Epitaxial Source/Drain Structures for Multigate Devices and Methods of Fabricating Thereof | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18784139 | SEMICONDUCTOR DEVICES HAVING SILICIDE LAYER | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18765271 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18631274 | SEMICONDUCTOR STRUCTURE | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18618063 | TFT WITH HYDROGEN ABSORPTION LAYER AND METHOD FOR FORMING THE SAME | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18428230 | METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18475965 | STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND BOTTOM SOURCE/DRAIN FEATURES | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy73.0% of resolved applications examined by Bitew A Dinke were allowed (792 resolved cases), compared with 26.4% across Art Unit 2141 over the last five years.
This examiner's interview lift is +12.2 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Bitew A Dinke took 840 days on average from filing to allowance.
Bitew A Dinke examines applications in Art Unit 2141 in Tech Center 4100.
