Listed by the USPTO as HSIEH, HSIN YI
Tech Center 2800 • Art Units: 2811 2816 2899
This examiner grants 51% of resolved cases
HSIEH, HSIN YI is a USPTO patent examiner in tech center 2800 and art unit 2811. The record reports 642 resolved cases, an allowance rate of 50.9%, and a median of 1426 days to allowance. The interview lift is 5.8%, so the available data places greater emphasis on the broader written prosecution record than on interview-associated movement.
The listed companies are Samsung Display Co., Ltd., Samsung Electronics Co., Ltd., and Taiwan Semiconductor Manufacturing Company, Ltd. The associated firms are Haynes and Boone, LLP (24061), Womble Bond Dickinson US LLP, and Akona IP PC - Intel. Practitioners can use these details to prepare claim responses and set timing expectations.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18794562 | DISPLAY DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18403487 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18362414 | LIGHT EMITTING ELEMENT, DISPLAY DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT | Non-Final OA | Samsung Display Co., LTD. |
| 17975712 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 17974695 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 17969104 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME | Final Rejection | Samsung Display Co., LTD. |
| 17743366 | PIXEL AND DISPLAY DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18335843 | ULTRAVIOLET SEMICONDUCTOR LIGHT-EMITTING ELEMENT | Final Rejection | STANLEY ELECTRIC CO., LTD. |
| 18451150 | PACKAGE ARCHITECTURE WITH BRIDGE DIES HAVING AIR GAPS AROUND VIAS | Non-Final OA | Intel Corporation |
| 18808110 | Method of manufacturing a light emitting device | Non-Final OA | InnoLux Corporation |
| 17815968 | FinFET Having Non-Merging Epitaxially Grown Source/Drains | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18242591 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT | Final Rejection | NIKKISO CO., LTD. |
| 17722061 | µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME | Final Rejection | OSRAM Opto Semiconductors GmbH |
| 18029855 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR | Non-Final OA | ENKRIS SEMICONDUCTOR, INC. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy50.9% of resolved applications examined by Hsin Yi Hsieh were allowed (642 resolved cases), compared with 72.2% across Art Unit 2811 over the last five years.
This examiner's interview lift is +5.8 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Hsin Yi Hsieh took 1,426 days on average from filing to allowance.
Hsin Yi Hsieh examines applications in Art Unit 2811 in Tech Center 2800 (Semiconductors, Circuits & Optics).
