Listed by the USPTO as LAOBAK, ANDREW KEELAN
Tech Center 2800 • Art Units: 1713 1716 2811
This examiner grants 76% of resolved cases
LAOBAK, ANDREW KEELAN is assigned to Tech Center 2800 and art unit 1713. The record includes 62 resolved cases and an allowance rate of 75.8%. The median time to allowance is 1155 days. Interviews are associated with a 34.7% lift in the allowance rate, making interview preparation an important strategic consideration in this docket. The case volume calls for measured use of the results.
The listed companies are Tokyo Electron Limited, Applied Materials Inc., and Samsung Electronics Co., Ltd. The listed firms are FISH & RICHARDSON P.C. (TC), FITCH, EVEN, TABIN & FLANNERY, LLP, and FOLEY & LARDNER LLP. These appearances can help practitioners locate relevant prosecution experience and understand the technology represented. The profile supports evaluating interview timing alongside amendment strategy, without predicting the outcome of an individual application.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18746869 | CHEMICAL LIQUID, MANUFACTURING METHOD OF MODIFIED SUBSTRATE, MANUFACTURING METHOD OF LAMINATE, AND CHEMICAL LIQUID CONTAINER | Final Rejection | FUJIFILM Corporation |
| 18609795 | SLURRY COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18596020 | SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | Samsung Electronics Co., Ltd. |
| 18139840 | ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS | Non-Final OA | Samsung Electronics Co., Ltd. |
| 19212813 | COMPOSITIONS AND METHODS FOR TUNGSTEN ETCHING INHIBITION | Non-Final OA | BASF SE |
| 18718981 | GAS TREATMENT METHOD AND GAS TREATMENT DEVICE | Non-Final OA | Tokyo Electron Limited |
| 18607202 | HARC ETCH CHEMISTRY FOR SEMINCONDUCTORS | Final Rejection | Tokyo Electron Limited |
| 18603049 | CYCLIC ETCH/DEPOSITION PLASMA PROCESSES USING TUNGSTEN BASED PRECURSOR GAS | Non-Final OA | Tokyo Electron Limited |
| 18422013 | ETCHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, ETCHING PROGRAM, AND PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18319419 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18817646 | METAL-CONTAINING HARDMASK OPENING METHODS USING BORON-AND-HALOGEN-CONTAINING PRECURSORS | Final Rejection | Applied Materials, Inc. |
| 18101932 | SYSTEMS AND METHODS FOR TITANIUM-CONTAINING FILM REMOVAL | Non-Final OA | Applied Materials, Inc. |
| 18098791 | DRY ETCH OF BORON-CONTAINING MATERIAL | Final Rejection | Applied Materials, Inc. |
| 18857708 | POLISHING LIQUID, POLISHING METHOD, COMPONENT PRODUCTION METHOD, AND SEMICONDUCTOR COMPONENT PRODUCTION METHOD | Non-Final OA | Resonac Corporation |
| 19109034 | ETCHANT COMPOSITION | Non-Final OA | Kao Corporation |
| 18602212 | COMPOSITION FOR SURFACE TREATMENT, SURFACE TREATMENT METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE | Final Rejection | FUJIMI INCORPORATED |
| 18439028 | PROTECTIVE FILM, PROTECTIVE FILM AGENT, AND METHOD OF PROCESSING WORKPIECE | Non-Final OA | DISCO CORPORATION |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy75.8% of resolved applications examined by Andrew Keelan Laobak were allowed (62 resolved cases), compared with 62.4% across Art Unit 1713 over the last five years.
This examiner's interview lift is +34.7 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Andrew Keelan Laobak took 1,155 days on average from filing to allowance.
Andrew Keelan Laobak examines applications in Art Unit 1713 in Tech Center 2800 (Semiconductors, Circuits & Optics).
