Tech Center 2800 • Art Units: 1713 1716 2811
This examiner grants 77% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18746869 | CHEMICAL LIQUID, MANUFACTURING METHOD OF MODIFIED SUBSTRATE, MANUFACTURING METHOD OF LAMINATE, AND CHEMICAL LIQUID CONTAINER | Non-Final OA | FUJIFILM Corporation |
| 17965559 | METHOD FOR CONTROLLING WET ETCH RATE (WER) SELECTIVITY | Non-Final OA | ASM IP Holding B.V. |
| 18610434 | METHODS OF PROCESSING A SUBSTRATE ON A BONDING SYSTEM, AND RELATED BONDING SYSTEMS | Non-Final OA | KULICKE AND SOFFA INDUSTRIES, INC. |
| 18498900 | Semiconductor Device Having Dielectric Material Treated with Microwave Plasma and Method of Fabricating Thereof | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18305698 | SEMICONDUCTOR PROCESSING TOOL AND METHODS OF OPERATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18817646 | METAL-CONTAINING HARDMASK OPENING METHODS USING BORON-AND-HALOGEN-CONTAINING PRECURSORS | Non-Final OA | Applied Materials, Inc. |
| 18101932 | SYSTEMS AND METHODS FOR TITANIUM-CONTAINING FILM REMOVAL | Non-Final OA | Applied Materials, Inc. |
| 18098791 | DRY ETCH OF BORON-CONTAINING MATERIAL | Non-Final OA | Applied Materials, Inc. |
| 18607202 | HARC ETCH CHEMISTRY FOR SEMINCONDUCTORS | Non-Final OA | Tokyo Electron Limited |
| 18603049 | CYCLIC ETCH/DEPOSITION PLASMA PROCESSES USING TUNGSTEN BASED PRECURSOR GAS | Final Rejection | Tokyo Electron Limited |
| 18422013 | ETCHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, ETCHING PROGRAM, AND PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18319419 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
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