Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1713 1716 2811
This examiner grants 75% of resolved cases
Andrew Keelan Laobak works in Tech Center 2800 and Art Unit 1713 with 61 resolved cases. His allowance rate pct is 75.4, and the median days to allowance is 1159. These metrics suggest the prosecution experience for applicants in his docket. The 1159-day median to allowance is a figure for managing expectations in Art Unit 1713 and planning the timing of future filings.
The interview lift pct of 34.5 is a metric indicating that interviews are a tool for applicants. This 34.5 lift suggests that direct engagement can improve the 75.4 allowance rate pct. The 61 resolved cases provide an early indication of this examiner's tendencies. A 34.5 lift is a reason for practitioners to consider an interview as a strategy for overcoming rejections and securing a grant, potentially impacting the 1159-day median timeline.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18609795 | SLURRY COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18596020 | SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | Samsung Electronics Co., Ltd. |
| 18139840 | ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS | Final Rejection | Samsung Electronics Co., Ltd. |
| 18746869 | CHEMICAL LIQUID, MANUFACTURING METHOD OF MODIFIED SUBSTRATE, MANUFACTURING METHOD OF LAMINATE, AND CHEMICAL LIQUID CONTAINER | Non-Final OA | FUJIFILM Corporation |
| 18857708 | POLISHING LIQUID, POLISHING METHOD, COMPONENT PRODUCTION METHOD, AND SEMICONDUCTOR COMPONENT PRODUCTION METHOD | Non-Final OA | Resonac Corporation |
| 18012194 | IN-SITU HYDROCARBON-BASED LAYER FOR NON-CONFORMAL PASSIVATION OF PARTIALLY ETCHED STRUCTURES | Non-Final OA | Lam Research Corporation |
| 18817646 | METAL-CONTAINING HARDMASK OPENING METHODS USING BORON-AND-HALOGEN-CONTAINING PRECURSORS | Non-Final OA | Applied Materials, Inc. |
| 18601809 | DEPOSITION PROCESS FOR PATTERNING EDGE PLACEMENT ERROR IMPROVEMENT | Non-Final OA | Applied Materials, Inc. |
| 18101932 | SYSTEMS AND METHODS FOR TITANIUM-CONTAINING FILM REMOVAL | Non-Final OA | Applied Materials, Inc. |
| 18098791 | DRY ETCH OF BORON-CONTAINING MATERIAL | Final Rejection | Applied Materials, Inc. |
| 18718981 | GAS TREATMENT METHOD AND GAS TREATMENT DEVICE | Non-Final OA | Tokyo Electron Limited |
| 18607202 | HARC ETCH CHEMISTRY FOR SEMINCONDUCTORS | Final Rejection | Tokyo Electron Limited |
| 18319419 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18997923 | PLASMA ETCHING METHOD USING HEPTAFLUOROPROPYL METHYL ETHER AND HEPTAFLUOROISOPROPYL METHYL ETHER | Non-Final OA | AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION |
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