Prosecution Insights
Prosecution Insights
Tech Center 1700 • Art Units: 1713
This examiner grants 78% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18596020 | SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18081899 | ETCHING COMPOSITION FOR ETCHING MOLYBDENUM FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18746869 | CHEMICAL LIQUID, MANUFACTURING METHOD OF MODIFIED SUBSTRATE, MANUFACTURING METHOD OF LAMINATE, AND CHEMICAL LIQUID CONTAINER | Final Rejection | FUJIFILM Corporation |
| 17547180 | POLISHING LIQUID AND CHEMICAL MECHANICAL POLISHING METHOD | Non-Final OA | FUJIFILM Corporation |
| 18582453 | PROCESSING OF SIGNALS FROM IN-SITU MONITORING SYSTEM IN CHEMICAL MECHANICAL POLISHING | Non-Final OA | Applied Materials, Inc. |
| 18209711 | IN-SITU ETCH AND INHIBITION IN PLASMA ENHANCED ATOMIC LAYER DEPOSITION | Non-Final OA | Applied Materials, Inc. |
| 18101932 | SYSTEMS AND METHODS FOR TITANIUM-CONTAINING FILM REMOVAL | Final Rejection | Applied Materials, Inc. |
| 18098791 | DRY ETCH OF BORON-CONTAINING MATERIAL | Non-Final OA | Applied Materials, Inc. |
| 18598206 | METHOD FOR MANUFACTURING MULTILAYER CERAMIC ELECTRONIC COMPONENT | Non-Final OA | KYOCERA Corporation |
| 18305698 | SEMICONDUCTOR PROCESSING TOOL AND METHODS OF OPERATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18121621 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18151223 | Method for Etching Features in a Layer in a Substrate | Non-Final OA | Tokyo Electron Limited |
| 18048618 | METHOD FOR FORMING A PATTERN | Final Rejection | Tokyo Electron Limited |
| 18602237 | ETCHING METHOD | Non-Final OA | KABUSHIKI KAISHA TOSHIBA |
| 18081685 | SUBSTRATE TREATING APPARATUS AND METHOD THEREOF | Final Rejection | SEMES CO., LTD. |
| 18002788 | ATOMIC LAYER ETCHING OF A SEMICONDUCTOR, A METAL, OR A METAL OXIDE WITH SELECTIVITY TO A DIELECTRIC | Final Rejection | Lam Research Corporation |
| 18001590 | REMOVAL OF TIN OXIDE IN CHAMBER CLEANING | Non-Final OA | Lam Research Corporation |
| 17995290 | SELECTIVE PRECISION ETCHING OF SEMICONDUCTOR MATERIALS | Non-Final OA | Lam Research Corporation |
| 18439028 | PROTECTIVE FILM, PROTECTIVE FILM AGENT, AND METHOD OF PROCESSING WORKPIECE | Non-Final OA | DISCO CORPORATION |
| 17911064 | POLISHING COMPOSITION AND POLISHING METHOD | Final Rejection | FUJIMI INCORPORATED |
| 18441167 | SILICON-ETCHANT COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | Non-Final OA | DONGWOO FINE-CHEM CO., LTD. |
| 18129433 | METHOD FOR IMPROVING HEIGHT DIFFERENCE BETWEEN GATES | Non-Final OA | Shanghai Huali Integrated Circuit Corporation |
| 18017469 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 18383231 | FACILITATING FORMATION OF A VIA IN A SUBSTRATE | Non-Final OA | MOSAIC MICROSYSTEMS LLC |
| 18077499 | COMPOSITION FOR THE SELECTIVE ETCHING OF SILICON | Non-Final OA | ENF TECHNOLOGY CO., LTD. |
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