Listed by the USPTO as PHAM, THOMAS T
Tech Center 2800 • Art Units: 1713 1714 1716 1743 2852
This examiner grants 52% of resolved cases
PHAM, THOMAS T is a USPTO patent examiner in tech center 2800 and art unit 1713. The profile covers 583 resolved cases, an allowance rate of 51.5%, and a median of 1181 days to allowance. The interview lift is 15.8%, indicating a positive association between interviews and allowance outcomes in the reported cases.
The listed companies are Tokyo Electron Limited, Applied Materials Inc., and Taiwan Semiconductor Manufacturing Company, Ltd. The listed firms are MILES & STOCKBRIDGE PC, OLIFF PLC, and SUGHRUE MION, PLLC. The allowance rate suggests that practitioners should give careful attention to claim scope and response positioning. The median timing is relevant to portfolio forecasting, while the interview measure supports evaluating direct examiner engagement as a complement to written prosecution.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 17889136 | METHOD FOR TREATING OBJECT TO BE TREATED AND TREATMENT LIQUID | Final Rejection | FUJIFILM Corporation |
| 18232123 | PLASMA CONTROL DEVICE AND PLASMA CONTROL METHOD | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 17966021 | MAGNET-DRIVEN CHEMICAL-MECHANICAL POLISHING | Final Rejection | Intel Corporation |
| 18386520 | MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN PLANAR STRUCTURES | Final Rejection | Micron Technology, Inc. |
| 18433320 | DIRECT CURRENT SUPERPOSITION (DCS) FOR PROTECTION OF ORGANIC MANDREL DURING SPACER DEPOSITION | Final Rejection | Tokyo Electron Limited |
| 18402328 | FAULT DETECTION AND CLASSIFICATION (FDC) FOR ENDPOINT DETECTION (EPD) BY REFLECTOMETRY | Final Rejection | Tokyo Electron Limited |
| 18573700 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM AND COMPUTER-READABLE RECORDING MEDIUM | Non-Final OA | Tokyo Electron Limited |
| 18386618 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18538048 | ISOTROPIC ECHING METHOD FOR TWO-DIMENSIONAL SEMICONDUCTOR MATERIALS | Final Rejection | Research & Business Foundation SUNGKYUNKWAN UNIVERSITY |
| 18374224 | ETCHING PROCESSING METHOD AND ETCHING PROCESSING APPARATUS | Final Rejection | Hitachi High-Tech Corporation |
| 17908177 | PLASMA PROCESSING METHOD | Final Rejection | Hitachi High-Tech Corporation |
| 18702402 | ETCHING METHODS USING SILICON-CONTAINING HYDROFLUOROCARBONS | Non-Final OA | L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude |
| 19051385 | METAL OXIDE DIRECTIONAL REMOVAL | Final Rejection | Applied Materials, Inc. |
| 18521948 | PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL | Final Rejection | Applied Materials, Inc. |
| 17674127 | HIGHLY SELECTIVE SILICON ETCHING | Final Rejection | Applied Materials, Inc. |
| 18657842 | APPARATUS AND METHODS FOR CHEMICAL MECHANICAL POLISHING | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18400440 | SEMICONDUCTOR DIE AND METHODS OF FORMATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18646459 | PLANARIZATION PROCESS AND METHOD | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18752505 | METHODS OF TREATING A SEMICONDUCTOR SUBSTRATE AND APPARATUS | Non-Final OA | SPTS Technologies Limited |
| 18430567 | WET ETCH FORMULATIONS AND RELATED METHODS | Final Rejection | ENTEGRIS, INC. |
| 18766908 | POLISHING COMPOSITIONS AND METHODS OF USE THEREOF | Non-Final OA | Fujifilm Electronic Materials U.S.A., Inc. |
| 18697692 | METAL OXIDE WET ETCHING METHOD | Final Rejection | PSIQUANTUM CORP. |
| 18740482 | METHOD FOR PLANARIZING SURFACE OF SEMICONDUCTOR DEVICE | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18187055 | ATOMIC LAYER ETCHING OF METAL OXIDES USING NOVEL CO-REACTANTS AS HALOGENATING AGENTS FOR SEMICONDUCTOR FABRICATION | Final Rejection | North Carolina State University |
| 17910895 | POLISHING COMPOSITION AND POLISHING METHOD | Non-Final OA | FUJIMI INCORPORATED |
| 16645741 | METHOD FOR MANUFACTURING DISK-SHAPED GLASS SUBSTRATE, METHOD FOR MANUFACTURING THIN GLASS SUBSTRATE, AND METHOD FOR MANUFACTURING LIGHT-GUIDING PLATE | Final Rejection | HOYA CORPORATION |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy51.5% of resolved applications examined by Thomas T Pham were allowed (583 resolved cases), compared with 62.4% across Art Unit 1713 over the last five years.
This examiner's interview lift is +15.8 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Thomas T Pham took 1,181 days on average from filing to allowance.
Thomas T Pham examines applications in Art Unit 1713 in Tech Center 2800 (Semiconductors, Circuits & Optics).
