Prosecution Insights
Prosecution Insights
Tech Center 1700 • Art Units: 1714
This examiner grants 57% of resolved cases
Hua Qi is an examiner in Tech Center 1700 and Art Unit 1714. He has managed 553 resolved cases with an allowance rate of 56.6 percent. This 56.6 percent rate indicates a balanced approach to examination, providing a baseline for applicant expectations.
The interview lift is 23.1 percent. This figure suggests that conducting an interview is a highly effective strategy for increasing the likelihood of a grant. The 23.1 percent lift provides a substantial boost to the allowance rate, making it a critical tactic for practitioners to consider during prosecution.
The median days to allowance is 1187. This timeline represents the typical duration for applications to reach a final grant. With 553 resolved cases, these metrics offer a clear view of the examiner's performance. The 1187-day median defines the expected prosecution experience for applicants in this docket.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18756348 | GROUP-III NITRIDE SUBSTRATE | Non-Final OA | Panasonic Holdings Corporation |
| 18110403 | SYSTEMS AND METHODS FOR PROCESSING THE SURFACE OF AN EPITAXIALLY GROWN SILICON FILM USING A RADICAL SPECIES | Final Rejection | ASM IP Holding B.V. |
| 18248740 | METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT EMITTING DEVICE | Final Rejection | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 18471940 | LAYER TRANSFER USING PATTERNED MASKS AND RELATED SYSTEMS | Final Rejection | Massachusetts Institute of Technology |
| 18140207 | EPI ISOLATION PLATE AND PARALLEL BLOCK PURGE FLOW TUNING FOR GROWTH RATE AND UNIFORMITY | Non-Final OA | Applied Materials, Inc. |
| 17099454 | APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION | Final Rejection | Applied Materials, Inc. |
| 18897279 | GROUP 13 NITRIDE SINGLE CRYSTAL SUBSTRATE | Non-Final OA | NGK INSULATORS, LTD. |
| 18794112 | METHOD OF PROCESSING CARBON-CONTAINED MONOCRYSTALLINE SUBSTRATE | Non-Final OA | DISCO CORPORATION |
| 18501985 | POLYSILICON ROD AND METHOD FOR MANUFACTURING POLYSILICON ROD | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 18870058 | METHOD FOR PRODUCING SILICON SINGLE CRYSTAL | Non-Final OA | Shin-Etsu Handotai Co., Ltd. |
| 18053796 | SEMICONDUCTOR CRYSTAL GROWTH USING SOURCE POWDER FROM CRUCIBLE WALL | Non-Final OA | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
| 17996737 | SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION METHOD | Final Rejection | SUMCO Corporation |
| 18833981 | METHOD AND APPARATUS FOR PRODUCING ELECTRICALLY CONDUCTING BULK ß-GA2O3 SINGLE CRYSTALS AND ELECTRICALLY CONDUCTING BULK ß-GA2O3 SINGLE CRYSTAL | Non-Final OA | SILTRONIC AG |
| 18840885 | METHOD FOR SUPPRESSING FORMATION OF STACKING FAULT, STRUCTURE PRODUCED BY THIS METHOD, AND METHOD FOR EVALUATING AFFECTED LAYER | Non-Final OA | TOYOTA TSUSHO CORPORATION |
| 17763684 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATES AND DEVICE FOR PRODUCING SEMICONDUCTOR SUBSTRATES | Final Rejection | TOYOTA TSUSHO CORPORATION |
| 17096512 | INGOT PULLER APPARATUS HAVING A HEAT SHIELD DISPOSED BELOW A SIDE HEATER AND METHODS FOR PREPARING AN INGOT WITH SUCH APPARATUS | Final Rejection | GlobalWaters Co., Ltd. |
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