Tech Center 1700 • Art Units: 1714
This examiner grants 56% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18522817 | METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18756348 | GROUP-III NITRIDE SUBSTRATE | Non-Final OA | Panasonic Holdings Corporation |
| 18248740 | METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT EMITTING DEVICE | Final Rejection | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 18501985 | POLYSILICON ROD AND METHOD FOR MANUFACTURING POLYSILICON ROD | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 18272253 | SINGLE CRYSTAL PULLING APPARATUS AND METHOD FOR PULLING SINGLE CRYSTAL | Final Rejection | SHIN-ETSU HANDOTAI CO., LTD. |
| 18728569 | Reaction Furnace for Producing Polycrystalline Silicon Rod, Gas Supply Nozzle, Production Method of Polycrystalline Silicon Rod, and Polycrystalline Silicon Rod | Non-Final OA | Tokuyama Corporation |
| 17099454 | APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION | Final Rejection | Applied Materials, Inc. |
| 18709177 | METAL OXIDE MANUFACTURING DEVICE AND METAL OXIDE MANUFACTURING METHOD | Non-Final OA | DIC Corporation |
| 18053796 | SEMICONDUCTOR CRYSTAL GROWTH USING SOURCE POWDER FROM CRUCIBLE WALL | Final Rejection | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
| 18332032 | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD | Non-Final OA | NuFlare Technology, Inc. |
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