Tech Center 1700 • Art Units: 1714
This examiner grants 55% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18248740 | METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT EMITTING DEVICE | Non-Final OA | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 18110403 | SYSTEMS AND METHODS FOR PROCESSING THE SURFACE OF AN EPITAXIALLY GROWN SILICON FILM USING A RADICAL SPECIES | Non-Final OA | ASM IP Holding B.V. |
| 19243262 | MANUFACTURING METHOD OF QUARTZ GLASS CRUCIBLE | Non-Final OA | SUMCO CORPORATION |
| 18237001 | METHOD OF MANUFACTURING MONOCRYSTALLINE SILICON | Non-Final OA | SUMCO CORPORATION |
| 18036988 | METHOD OF ESTIMATING OXYGEN CONCENTRATION IN SILICON SINGLE CRYSTAL, METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYSTAL MANUFACTURING APPARATAUS | Non-Final OA | SUMCO Corporation |
| 17996737 | SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION METHOD | Final Rejection | SUMCO Corporation |
| 18140207 | EPI ISOLATION PLATE AND PARALLEL BLOCK PURGE FLOW TUNING FOR GROWTH RATE AND UNIFORMITY | Non-Final OA | Applied Materials, Inc. |
| 17099454 | APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION | Final Rejection | Applied Materials, Inc. |
| 18027686 | DEVICE AND METHOD FOR MANUFACTURING A CRYSTALLINE CONVERSION LAYER FROM A SOLUTION | Final Rejection | CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE |
| 18518918 | METHOD FOR PREPARING SILICON SINGLE CRYSTAL ROD AND SINGLE CRYSTAL FURNACE | Non-Final OA | ZHEJIANG JINKO SOLAR CO., LTD. |
| 18554477 | PROCESS FOR MANUFACTURING SEMICONDUCTOR WAFERS CONTAINING A GAS-PHASE EPITAXIAL LAYER IN A DEPOSITION CHAMBER | Non-Final OA | SILTRONIC AG |
| 18551066 | INGOT GROWTH APPARATUS AND METHOD FOR CONTROLLING PRELIMINARY CRUCIBLE OF INGOT GROWTH APPARATUS | Final Rejection | HANWHA SOLUTIONS CORPORATION |
| 18272253 | SINGLE CRYSTAL PULLING APPARATUS AND METHOD FOR PULLING SINGLE CRYSTAL | Final Rejection | SHIN-ETSU HANDOTAI CO., LTD. |
| 18053796 | SEMICONDUCTOR CRYSTAL GROWTH USING SOURCE POWDER FROM CRUCIBLE WALL | Non-Final OA | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
| 18526700 | SILICON CARBIDE PLATFORMS AND THE MANUFACTURE THEREOF THROUGH SILICON CARBIDE EPITAXY ON SILICON | Final Rejection | HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
| 18028815 | INGOT GROWTH APPARATUS AND CONTROL METHOD THEREOF | Non-Final OA | HANWHA CORPORATION |
| 18507219 | INGOT PULLER APPARATUS HAVING A REFLECTOR ASSEMBLY SUSPENDED FROM SUPPORT SHAFTS | Non-Final OA | GlobalWafers Co., Ltd. |
| 18342986 | RESISTIVITY STABILIZATION MEASUREMENT OF FAT NECK SLABS FOR HIGH RESISTIVITY AND ULTRA-HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT GROWTH | Final Rejection | GlobalWafers Co., Ltd |
| 18184886 | SYSTEMS AND METHODS FOR DETERMINING MECHANICAL WEAR IN A CRYSTAL PULLER | Non-Final OA | GlobalWafers Co., Ltd. |
| 18567705 | Heater and Single Crystal Growing Apparatus | Non-Final OA | XI’AN ESWIN MATERIAL TECHNOLOGY CO., LTD. |
| 18258769 | Crystal Puller, Method for Manufacturing Monocrystalline Silicon Ingots and Monocrystalline Silicon Ingots | Final Rejection | XI’AN ESWIN MATERIAL TECHNOLOGY CO., LTD. |
| 17861187 | SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAME | Final Rejection | Pallidus, Inc |
| 18555472 | SILICON POWDER MOLDING METHOD, SILICON BLOCK, AND APPLICATION | Final Rejection | TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD. |
| 18553509 | SUPPORTING ROD FOR SINGLE CRYSTAL FURNACE AND SINGLE CRYSTAL FURNACE | Non-Final OA | TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD. |
| 18548078 | FLOW GUIDE CYLINDER LIFTING ASSEMBLY AND SUSPENDED FLOW GUIDE CYLINDER CONTAINING SAME | Final Rejection | TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD. |
| 18370935 | Silicon Carbide Epitaxy | Non-Final OA | ThinSiC Inc. |
| 18550651 | Apparatus and Method for Regulating Hot Zone for Single Crystal Growth | Non-Final OA | XI’AN ESWIN SILICON WAFER TECHNOLOGY CO., LTD. |
| 17763684 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATES AND DEVICE FOR PRODUCING SEMICONDUCTOR SUBSTRATES | Final Rejection | TOYOTA TSUSHO CORPORATION |
| 18028678 | APPARATUS FOR GROWING CRYSTALS, HAVING A THERMAL CASING UNIT | Final Rejection | EBNER Industrieofenbau GmbH |
| 17869710 | SYSTEMS AND METHODS FOR FABRICATING CRYSTALS OF METAL COMPOUNDS | Non-Final OA | Mivium, Inc. |
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