Technology areas: Chemistry & Materials • Semiconductors, Circuits & Optics
13 pending office actions • 10 art units • 13 examiners • 0 of 13 (0%) have an AI response strategy ready • 33 patents granted in the last 365 days
Soitec has 16 pending office actions in Semiconductors, Circuits & Optics. The matters span 16 examiners and 11 art units, showing broad examiner distribution and repeated use of some art-unit environments.
TUROCY, DAVID P is the busiest examiner, with 1 pending matter. No examiner has more than that stated load, so examiner-specific leverage is limited. The art-unit distribution still supports identifying recurring technical and procedural patterns across related matters.
The portfolio calls for systematic docket coordination across many examination relationships. Counsel may benefit from maintaining consistent claim terminology and disclosure positions while adapting arguments to the relevant art-unit practice.
Based on the USPTO statutory response window for each pending office action. 2 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 6 (46%) |
| §102 only | 1 (8%) |
| Multi-statute (no §101) | 6 (46%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| CAILLOUET, CHRISTOPHER C | 1 | 67.8% | +14.9% |
| RAHIM, NILUFA | 1 | 83.6% | -1.0% |
| HOQUE, MOHAMMAD M | 1 | 85.3% | +9.3% |
| KOCH, GEORGE R | 1 | 72.8% | +17.0% |
| ARMAND, MARC ANTHONY | 1 | 83.6% | +4.1% |
| SMITH JR., JIMMY R | 1 | 65.2% | +42.4% |
| CARTER, MICHAEL W | 1 | 74.3% | +15.4% |
| GROSS, CARSON | 1 | 73.0% | +21.5% |
| WASHVILLE, JEFFREY D | 1 | 80.1% | -4.6% |
| JUNGE, BRYAN R. | 1 | 58.0% | +9.0% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 1 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18886782 | METHOD FOR TRANSFERRING BLOCKS FROM A DONOR SUBSTRATE ONTO A RECEIVER SUBSTRATE BY IMPLANTING IONS IN THE DONOR SUBSTRATE THROUGH A MASK, BONDING THE DONOR SUBSTRATE TO THE RECEIVER SUBSTRATE, AND DETACHING THE DONOR | HOQUE, MOHAMMAD M | — |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 6 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18888578 | STRUCTURE FOR A FRONT-FACING IMAGE SENSOR | RAHIM, NILUFA | — |
| 18608134 | SYSTEM FOR FRACTURING A PLURALITY OF WAFER ASSEMBLIES | ARMAND, MARC ANTHONY | — |
| 18685991 | METHOD FOR TRANSFERRING A USEFUL LAYER TO A FRONT FACE OF CARRIER SUBSTRATE | SMITH JR., JIMMY R | — |
| 18685257 | SEMICONDUCTOR STRUCTURE FOR OPTOELECTRONIC APPLICATIONS | CARTER, MICHAEL W | — |
| 18461226 | PROCESS FOR MANUFACTURING A TWO-DIMENSIONAL FILM OF HEXAGONAL CRYSTALLINE STRUCTURE USING EPITAXIAL GROWTH ON A TRANSFERRED THIN METAL FILM | WASHVILLE, JEFFREY D | — |
| 18548616 | METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | JUNGE, BRYAN R. | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 5 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18901953 | PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTAL MATERIAL | CAILLOUET, CHRISTOPHER C | — |
| 18729023 | METHOD FOR PRODUCING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING A PIEZOELECTRIC LAYER TO A CARRIER SUBSTRATE | KOCH, GEORGE R | — |
| 18685991 | METHOD FOR TRANSFERRING A USEFUL LAYER TO A FRONT FACE OF CARRIER SUBSTRATE | SMITH JR., JIMMY R | — |
| 18685257 | SEMICONDUCTOR STRUCTURE FOR OPTOELECTRONIC APPLICATIONS | CARTER, MICHAEL W | — |
| 18287148 | METHOD OF MANUFACTURING A MULTILAYER STRUCTURE | GROSS, CARSON | — |
| Art Unit | Apps |
|---|---|
| 1745 | 3 |
| 2893 | 2 |
| 2817 | 1 |
| 2813 | 1 |
| 2828 | 1 |
| 1746 | 1 |
| 1766 | 1 |
| 2897 | 1 |
| 2818 | 1 |
| 3729 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18901953 | PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTAL MATERIAL | CAILLOUET, CHRISTOPHER C | 1745 | §103 | Final Rejection | — | Pending | Sep 30, 2024 |
| 18888578 | STRUCTURE FOR A FRONT-FACING IMAGE SENSOR | RAHIM, NILUFA | 2893 | §102§103§112 | Non-Final OA | — | Pending | Sep 18, 2024 |
| 18886782 | METHOD FOR TRANSFERRING BLOCKS FROM A DONOR SUBSTRATE ONTO A RECEIVER SUBSTRATE BY IMPLANTING IONS IN THE DONOR SUBSTRATE THROUGH A MASK, BONDING THE DONOR SUBSTRATE TO THE RECEIVER SUBSTRATE, AND DETACHING THE DONOR | HOQUE, MOHAMMAD M | 2817 | §102 | Non-Final OA | — | Pending | Sep 16, 2024 |
| 18729023 | METHOD FOR PRODUCING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING A PIEZOELECTRIC LAYER TO A CARRIER SUBSTRATE | KOCH, GEORGE R | 1745 | §103 | Final Rejection | — | Pending | Jul 15, 2024 |
| 18608134 | SYSTEM FOR FRACTURING A PLURALITY OF WAFER ASSEMBLIES | ARMAND, MARC ANTHONY | 2813 | §102§103 | Non-Final OA | — | Pending | Mar 18, 2024 |
| 18685991 | METHOD FOR TRANSFERRING A USEFUL LAYER TO A FRONT FACE OF CARRIER SUBSTRATE | SMITH JR., JIMMY R | 1745 | §102§103 | Non-Final OA | — | Pending | Feb 23, 2024 |
| 18685257 | SEMICONDUCTOR STRUCTURE FOR OPTOELECTRONIC APPLICATIONS | CARTER, MICHAEL W | 2828 | §102§103§112 | Non-Final OA | — | Pending | Feb 21, 2024 |
| 18287148 | METHOD OF MANUFACTURING A MULTILAYER STRUCTURE | GROSS, CARSON | 1746 | §103 | Non-Final OA | — | Pending | Oct 16, 2023 |
| 18461226 | PROCESS FOR MANUFACTURING A TWO-DIMENSIONAL FILM OF HEXAGONAL CRYSTALLINE STRUCTURE USING EPITAXIAL GROWTH ON A TRANSFERRED THIN METAL FILM | WASHVILLE, JEFFREY D | 1766 | §102§112 | Non-Final OA | — | Pending | Sep 05, 2023 |
| 18548616 | METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | JUNGE, BRYAN R. | 2897 | §103§112 | Final Rejection | — | Pending | Sep 01, 2023 |
| 18263802 | METHOD FOR PREPARING THE RESIDUE OF A DONOR SUBSTRATE, A LAYER OF WHICH HAS BEEN REMOVED BY DELAMINATION | DEGRASSE, IAN ISAAC | 2818 | §103 | Non-Final OA | 23d | Pending | Aug 01, 2023 |
| 17907245 | PROCESS FOR MANUFACTURING A PIEZOELECTRIC STRUCTURE FOR A RADIOFREQUENCY DEVICE WHICH STRUCTURE CAN BE USED TO TRANSFER A PIEZOELECTRIC LAYER, AND PROCESS FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER | CARLEY, JEFFREY T. | 3729 | §103 | Non-Final OA | — | Pending | Mar 17, 2023 |
| 17757822 | METHOD FOR MANUFACTURING A FULLY-DEPLETED SEMICONDUCTOR-ON-INSULATOR (FD_SOI) STRUCTURE INCLUDING HEAT-TREATING AN SOI SUBSTATE HAVING A P-TYPE MONOCRYSTALLINE SEMICONDUCTOR LAYER TO FORM A P-N JUNCTION BY DIFFUSION OF DOPANTS | MAI, ANH D | 2893 | §103 | Non-Final OA | 15d | Pending | Jun 21, 2022 |
IP Author helps IP teams respond to office actions faster with AI-generated responses, examiner analytics, and prosecution intelligence.
Start Free TrialSoitec has 13 pending office actions as of October 2026, spread across 10 art units and 13 examiners.
Christopher C Caillouet has the most, with 1 of Soitec's pending office actions.
Mostly Semiconductors, Circuits & Optics (USPTO Tech Center 2800), based on where its pending office actions are examined.
