Tech Center 2800 • Art Units: 2818
This examiner grants 0% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18378943 | NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18378858 | CHIP WITH CRACK GUIDING STRUCTURE COMBINED WITH CRACK STOP STRUCTURE | Non-Final OA | Infineon Technologies AG |
| 18378850 | SACRIFICIAL SOURCE/DRAIN FOR METALLIC SOURCE/DRAIN HORIZONTAL GATE ALL AROUND ARCHITECTURE | Non-Final OA | Applied Materials, Inc. |
| 18360856 | SELF-ALIGNED GATE CONTACT OVER LOCALLY RAISED GATE | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18533721 | SEMICONDUCTOR DEVICE | Non-Final OA | ROHM CO., LTD. |
| 18226386 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | Sumitomo Electric Device Innovations, Inc. |
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