Tech Center 3700 • Art Units: 1713 1716 1784 1792 3723
This examiner grants 72% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18603614 | CHEMICAL MECHANICAL POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18757975 | PLASMA ETCHING METHOD AND METHOD OF MANUFACTURING DISPLAY APPARATUS | Non-Final OA | Samsung Display Co., LTD. |
| 17699655 | POLISHING COMPOSITIONS AND METHODS OF USING THE SAME | Final Rejection | Fujifilm Electronic Materials U.S.A., Inc. |
| 18084303 | Hardmask to substrate pattern transfer method for Microfabrication of micro to mesoscale, high aspect ratio, multi-level, 3D Structures | Non-Final OA | The Board of Trustees of the Leland Stanford Junior University |
| 18845163 | ETCHING METHOD | Non-Final OA | HITACHI HIGH-TECH CORPORATION |
| 18732353 | NESTED-LOOP ATOMIC LAYER DEPOSITION WITH INHIBITION AND/OR ETCH | Non-Final OA | Applied Materials, Inc. |
| 18620762 | CONTROLLING ETCH EDGE EFFECTS | Non-Final OA | Tokyo Electron Limited |
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