Tech Center 1700 • Art Units: 1713 1716 1792
This examiner grants 71% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18603614 | CHEMICAL MECHANICAL POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18252032 | METHOD FOR SELECTIVELY ETCHING A METAL COMPONENT | Non-Final OA | Microsoft Technology Licensing, LLC |
| 18584540 | DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA | Non-Final OA | Applied Materials, Inc. |
| 18392785 | ATOMIC LAYER ETCHING OF SILICON OXIDE AT CRYOGENIC TEMPERATURE | Non-Final OA | Applied Materials, Inc. |
| 18539892 | ETCHING SUBSTRATES USING VAPOR ADSORPTION | Final Rejection | Applied Materials, Inc. |
| 18084303 | Hardmask to substrate pattern transfer method for Microfabrication of micro to mesoscale, high aspect ratio, multi-level, 3D Structures | Final Rejection | The Board of Trustees of the Leland Stanford Junior University |
| 18386601 | ETCHING METHOD | Non-Final OA | Tokyo Electron Limited |
| 18485978 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18479599 | ETCHING METHOD AND PLASMA PROCESSING SYSTEM | Non-Final OA | Tokyo Electron Limited |
| 18312427 | Protection Layer Formation during Plasma Etching Conductive Materials | Non-Final OA | Tokyo Electron Limited |
| 18248562 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18125206 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM | Non-Final OA | Tokyo Electron Limited |
| 18682767 | ETCHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT | Non-Final OA | Resonac Corporation |
| 18273605 | METHOD FOR FORMING PATTERN OF METAL OXIDE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT | Final Rejection | Resonac Corporation |
| 18439340 | Photolithography Methods and Resulting Structures | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18308266 | Stealth Patterning Formation for Bonding Improvement | Final Rejection | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18558788 | IMIDAZOLIUM-BASED POLY(IONIC LIQUID)S AND USE THEREFORE | Non-Final OA | Versum Materials US, LLC |
| 18252705 | METHOD FOR ETCHING SILICON WAFER | Non-Final OA | BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. |
| 18127053 | POLISHING COMPOSITIONS AND METHODS OF USE THEREOF | Final Rejection | Fujifilm Electronic Materials U.S.A., Inc. |
| 17699655 | POLISHING COMPOSITIONS AND METHODS OF USING THE SAME | Non-Final OA | Fujifilm Electronic Materials U.S.A., Inc. |
| 18213865 | Control of Trench Profile Angle in SiC Semiconductors | Non-Final OA | SPTS Technologies Limited |
| 18027071 | METHOD OF PREPARING A SILICON CARBIDE WAFER | Final Rejection | Oxford Instruments Nanotechnology Tools Limited |
| 17923931 | PLASMA PROCESSING METHOD USING A MIXED PLASMA PROCESSING GAS OF C4F8 AND 2,3,3,3- TETRAFLUOROPROPENE | Final Rejection | SPP Technologies Co., Ltd. |
| 18288270 | MULTI-LEVEL STRUCTURE FABRICATION | Non-Final OA | NILT Switzerland GmbH |
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