Prosecution Insights
Prosecution Insights
Tech Center 3700 • Art Units: 1713 1716 1784 1792 3723
This examiner grants 72% of resolved cases
Stephanie P. Duclair serves in Art Unit 1713 within Tech Center 3700. The examiner has 827 resolved cases and an allowance rate of 72.2%. This indicates a high probability of success for patent applicants. The median days to allowance is 1005, which reflects an efficient timeline for prosecution.
The interview lift is 19.6%, suggesting that interviews are a productive tool for resolving issues and further increasing the probability of allowance beyond the 72.2% baseline. With 827 resolved cases, the data provides confidence in these metrics. Practitioners in Tech Center 3700 can expect a 1005-day median timeline.
The 72.2% allowance rate and 19.6% lift characterize the procedural landscape in Art Unit 1713. These figures allow for precise forecasting of prosecution outcomes. Applicants can use this data to justify the resources required for a formal interview.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19026794 | ETCHANT COMPOSITION FOR ETCHING SILICON GERMANIUM FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18757975 | PLASMA ETCHING METHOD AND METHOD OF MANUFACTURING DISPLAY APPARATUS | Non-Final OA | Samsung Display Co., LTD. |
| 18848961 | NEGATIVELY CHARGED SILICA PARTICLES, METHOD OF PRODUCING SUCH PARTICLES, COMPOSITIONS COMPRISING SUCH PARTICLES, AND A METHOD OF CHEMICAL-MECHANICAL POLISHING USING SUCH PARTICLES | Non-Final OA | MERCK PATENT GMBH |
| 18888714 | ETCHING COMPOSITIONS | Non-Final OA | Fujifilm Electronic Materials U.S.A., Inc. |
| 17699655 | POLISHING COMPOSITIONS AND METHODS OF USING THE SAME | Final Rejection | Fujifilm Electronic Materials U.S.A., Inc. |
| 18682767 | ETCHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT | Final Rejection | Resonac Corporation |
| 18084303 | Hardmask to substrate pattern transfer method for Microfabrication of micro to mesoscale, high aspect ratio, multi-level, 3D Structures | Non-Final OA | The Board of Trustees of the Leland Stanford Junior University |
| 18735717 | WET ETCHING OF HIGH INDEX GLASS FOR SURFACE STRENGTH IMPROVEMENT | Non-Final OA | CORNING INCORPORATED |
| 18937318 | POLISHING COMPOSITION FOR A SEMICONDUCTOR PROCESS AND MANUFACTURING METHOD OF SUBSTRATE USING THE SAME | Non-Final OA | SK HYNIX INC. |
| 19053940 | ATOMIC LAYER ETCHING FOR SUBTRACTIVE METAL ETCH | Non-Final OA | Lam Research Corporation |
| 18859433 | ORGANOCHLORIDE ETCH WITH PASSIVATION AND PROFILE CONTROL | Non-Final OA | Lam Research Corporation |
| 18937925 | METHODS OF SELECTIVELY ETCHING SILICON | Non-Final OA | Applied Materials, Inc. |
| 18584540 | DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA | Final Rejection | Applied Materials, Inc. |
| 18781793 | ETCHING SYSTEM FOR FORMING RECESSED FEATURES WITH HIGH ASPECT RATIO | Non-Final OA | Tokyo Electron Limited |
| 18620762 | CONTROLLING ETCH EDGE EFFECTS | Non-Final OA | Tokyo Electron Limited |
| 18588751 | VERTICAL FEATURE GROWTH USING FLUORINE-CONTAINING GAS | Final Rejection | Tokyo Electron Limited |
| 19053065 | POLISHING COMPOSITION AND POLISHING METHOD | Non-Final OA | FUJIMI INCORPORATED |
| 18851171 | POLISHING COMPOSITION | Non-Final OA | FUJIMI INCORPORATED |
| 18866177 | METHOD FOR NANO ETCHING OF COPPER AND COPPER ALLOY SURFACES | Non-Final OA | ATOTECH DEUTSCHLAND GMBH & Co. KG |
| 18527433 | METHOD FOR FABRICATION OF SEMICONDUCTOR STRUCTURES AND APPARATUS FOR FABRICATION OF THE SAME | Non-Final OA | National Yang Ming Chiao Tung University |
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