Prosecution Insights
Prosecution Insights
Technology area: Chemistry & Materials
21 pending office actions • 12 art units • 17 examiners • 0 of 21 (0%) have an AI response strategy ready • 13 patents granted in the last 365 days
Soulbrain Co., Ltd. is currently navigating 21 pending office actions in the Chemistry & Materials technology area. These applications are distributed across 12 distinct art units, reflecting a wide variety of chemical processes or material compositions. The portfolio is handled by 17 distinct examiners, suggesting that while some examiners may have multiple cases, the majority of the work is dispersed across many individuals.
Philip N Schwartz is the busiest examiner for Soulbrain Co., Ltd., with 4 pending office actions. This concentration is notable, as these 4 cases represent a portion of the 21 pending office actions. Managing the relationship with Philip N Schwartz will be a key component of the company's strategy, even as they navigate the requirements of 12 other distinct art units and examiners to ensure that their chemical innovations are consistently protected across the USPTO.
Based on the USPTO statutory response window for each pending office action. 6 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Every pending office action with a known statutory deadline, placed on a days-until-due axis. Dots left of Today are overdue; the further right, the more runway. Cases that share a deadline window stack vertically. 6 of the docket's apps have a known mailing date.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 6 (29%) |
| Multi-statute (no §101) | 15 (71%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| SCHWARTZ, PHILIP N | 4 | 55.5% | +17.0% |
| CARVALHO JR., ARMINDO | 2 | 50.3% | +29.0% |
| PENNY, TABATHA L | 1 | 45.7% | +22.8% |
| PROCTOR, CACHET I | 1 | 77.1% | +5.9% |
| BAKSHI, PANCHAM | 1 | 76.8% | +30.2% |
| PAGANO, ALEXANDER R | 1 | 78.7% | +11.3% |
| MCDONOUGH, JAMES E | 1 | 71.1% | +10.9% |
| ANTHONY, JOSEPH DAVID | 1 | 73.2% | +5.2% |
| KASS-MULLET, BENJAMIN ELI | 1 | 70.4% | +8.3% |
| BERRESFORD, JORDAN ELIZABETH | 1 | 68.1% | +6.1% |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 8 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18272084 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 20d |
| 18272083 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 22d |
| 18843486 | THIN FILM MODIFICATION COMPOSITION, METHOD OF FORMING THIN FILM USING THIN FILM MODIFICATION COMPOSITION, SEMICONDUCTOR SUBSTRATE INCLUDING THIN FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | ANTHONY, JOSEPH DAVID | 69d |
| 19159341 | METHOD OF FORMING THIN FILM, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME | PENNY, TABATHA L | — |
| 19113342 | ACTIVATOR, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME | PROCTOR, CACHET I | — |
| 19109585 | SHIELDING COMPOUND, METHOD OF FORMING THIN FILM USING SHIELDING COMPOUND, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE FABRICATED USING METHOD | BAKSHI, PANCHAM | — |
| 18704327 | ELECTROLYTE AND SECONDARY BATTERY INCLUDING THE SAME | KASS-MULLET, BENJAMIN ELI | — |
| 18627460 | ELECTROLYTE AND SECOND BATTERY COMPRISING SAME | CARVALHO JR., ARMINDO | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 8 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18272084 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 20d |
| 18272083 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 22d |
| 19159341 | METHOD OF FORMING THIN FILM, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME | PENNY, TABATHA L | — |
| 19109585 | SHIELDING COMPOUND, METHOD OF FORMING THIN FILM USING SHIELDING COMPOUND, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE FABRICATED USING METHOD | BAKSHI, PANCHAM | — |
| 18848179 | THIN FILM MODIFICATION COMPOSITION, METHOD OF FORMING THIN FILM USING THIN FILM MODIFICATION COMPOSITION, SEMICONDUCTOR SUBSTRATE INCLUDING THIN FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR | PAGANO, ALEXANDER R | — |
| 18847832 | VACUUM-BASED THIN FILM MODIFIER, THIN FILM MODIFICATION COMPOSITION INCLUDING VACUUM-BASED THIN FILM MODIFIER, METHOD OF FORMING THIN FILM USING THIN FILM MODIFICATION COMPOSITION, SEMICONDUCTOR SUBSTRATE INCLUDING THIN FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | MCDONOUGH, JAMES E | — |
| 18627460 | ELECTROLYTE AND SECOND BATTERY COMPRISING SAME | CARVALHO JR., ARMINDO | — |
| 18627456 | ELECTROLYTE AND SECONDARY BATTERY COMPRISING SAME | CARVALHO JR., ARMINDO | — |
| Art Unit | Apps |
|---|---|
| 1749 | 4 |
| 1712 | 2 |
| 1718 | 2 |
| 1692 | 2 |
| 1734 | 1 |
| 1764 | 1 |
| 1752 | 1 |
| 2898 | 1 |
| 1727 | 1 |
| 1751 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 19159341 | METHOD OF FORMING THIN FILM, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME | PENNY, TABATHA L | 1712 | §103§112Other | Non-Final OA | — | Pending | Aug 25, 2025 |
| 19113342 | ACTIVATOR, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME | PROCTOR, CACHET I | 1712 | §102§112 | Non-Final OA | — | Pending | Mar 19, 2025 |
| 19109585 | SHIELDING COMPOUND, METHOD OF FORMING THIN FILM USING SHIELDING COMPOUND, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE FABRICATED USING METHOD | BAKSHI, PANCHAM | 1718 | §102§112 | Final Rejection | — | Pending | Mar 07, 2025 |
| 18848179 | THIN FILM MODIFICATION COMPOSITION, METHOD OF FORMING THIN FILM USING THIN FILM MODIFICATION COMPOSITION, SEMICONDUCTOR SUBSTRATE INCLUDING THIN FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR | PAGANO, ALEXANDER R | 1692 | §103 | Final Rejection | — | Pending | Sep 18, 2024 |
| 18847832 | VACUUM-BASED THIN FILM MODIFIER, THIN FILM MODIFICATION COMPOSITION INCLUDING VACUUM-BASED THIN FILM MODIFIER, METHOD OF FORMING THIN FILM USING THIN FILM MODIFICATION COMPOSITION, SEMICONDUCTOR SUBSTRATE INCLUDING THIN FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | MCDONOUGH, JAMES E | 1734 | §103 | Non-Final OA | — | Pending | Sep 17, 2024 |
| 18843486 | THIN FILM MODIFICATION COMPOSITION, METHOD OF FORMING THIN FILM USING THIN FILM MODIFICATION COMPOSITION, SEMICONDUCTOR SUBSTRATE INCLUDING THIN FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | ANTHONY, JOSEPH DAVID | 1764 | §102§103 | Final Rejection | 69d | Pending | Sep 03, 2024 |
| 18704327 | ELECTROLYTE AND SECONDARY BATTERY INCLUDING THE SAME | KASS-MULLET, BENJAMIN ELI | 1752 | §102§103§112 | Non-Final OA | — | Pending | Apr 24, 2024 |
| 18627460 | ELECTROLYTE AND SECOND BATTERY COMPRISING SAME | CARVALHO JR., ARMINDO | — | §102§103 | Non-Final OA | — | Pending | Apr 05, 2024 |
| 18627456 | ELECTROLYTE AND SECONDARY BATTERY COMPRISING SAME | CARVALHO JR., ARMINDO | — | §102§103 | Non-Final OA | — | Pending | Apr 05, 2024 |
| 18627382 | ELECTROLYTE AND SECONDARY BATTERY COMPRISING SAME | BERRESFORD, JORDAN ELIZABETH | — | §102§103 | Non-Final OA | — | Pending | Apr 04, 2024 |
| 18288228 | FILM-FORMING MATERIAL, FILM-FORMING COMPOSITION, FILM-FORMING METHOD USING FILM-FORMING MATERIAL AND FILM-FORMING COMPOSITION, AND SEMICONDUCTOR DEVICE FABRICATED USING FILM-FORMING METHOD | RHOADES, DEREK JAMES | 1718 | §102§112 | Non-Final OA | — | Pending | Oct 25, 2023 |
| 18277075 | METAL THIN-FILM PRECURSOR COMPOSITION, METHOD OF FORMING THIN FILM USING METAL THIN-FILM PRECURSOR COMPOSITION, AND SEMICONDUCTOR SUBSTRATE FABRICATED USING METHOD | STARK, JARRETT J | 2898 | §103 | Final Rejection | 42d | Pending | Sep 15, 2023 |
| 18272084 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 1749 | §103§112 | Final Rejection | 20d | Pending | Aug 26, 2023 |
| 18272080 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 1749 | §102§112 | Final Rejection | — | Pending | Aug 26, 2023 |
| 18272085 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 1749 | §103§112 | Final Rejection | — | Pending | Aug 26, 2023 |
| 18272083 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 1749 | §103§112 | Final Rejection | 22d | Pending | Jul 12, 2023 |
| 18269521 | ELECTROLYTE AND SECONDARY BATTERY INCLUDING THE SAME | LUSTGRAAF, BENJAMIN T | 1727 | §103 | Non-Final OA | — | Pending | Jun 23, 2023 |
| 18269518 | ELECTROLYTE AND SECONDARY BATTERY INCLUDING THE SAME | RUTISER, CLAIRE A | 1751 | §103§112 | Non-Final OA | — | Pending | Jun 23, 2023 |
| 18208389 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY COMPRISING THE SAME | EGGERDING, ALIX ECHELMEYER | 1729 | §103 | Non-Final OA | 16d | Pending | Jun 12, 2023 |
| 18039206 | OXIDE FILM REACTION SURFACE CONTROL AGENT, METHOD OF FORMING OXIDE FILM USING OXIDE FILM REACTION SURFACE CONTROL AGENT, SEMICONDUCTOR SUBSTRATE INCLUDING OXIDE FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | HOU, FRANK S | 1692 | §102§112 | Non-Final OA | — | Pending | May 26, 2023 |
| 18014452 | GROWTH INHIBITOR FOR FORMING THIN FILM, METHOD OF FORMING THIN FILM USING GROWTH INHIBITOR, AND SEMICONDUCTOR SUBSTRATE FABRICATED BY METHOD | HEINCER, LIAM J | 1767 | §103 | Final Rejection | 60d | Pending | Jan 04, 2023 |
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