Prosecution Insights
Prosecution Insights
9 pending office actions • 7 art units • 7 examiners • 0 of 9 (0%) have an AI response strategy ready • 10 patents granted in the last 365 days
Based on the USPTO statutory response window for each pending office action. 8 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Every pending office action with a known statutory deadline, placed on a days-until-due axis. Dots left of Today are overdue; the further right, the more runway. Cases that share a deadline window stack vertically. 8 of the docket's apps have a known mailing date.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 7 (78%) |
| §102 only | 2 (22%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| SCHWARTZ, PHILIP N | 3 | 55.4% | +18.5% |
| CHEN, BRET P | 1 | 84.2% | +16.7% |
| ANTHONY, JOSEPH DAVID | 1 | 73.3% | +4.0% |
| STARK, JARRETT J | 1 | 70.3% | +11.2% |
| EGGERDING, ALIX ECHELMEYER | 1 | 57.8% | +17.4% |
| HOU, FRANK S | 1 | 71.5% | +34.5% |
| HEINCER, LIAM J | 1 | 55.5% | +25.9% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 1 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18848153 | METHOD OF FORMING THIN FILM, SEMICONDUCTOR SUBSTRATE FABRICATED USING METHOD, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | CHEN, BRET P | 9d overdue |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 8 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18848153 | METHOD OF FORMING THIN FILM, SEMICONDUCTOR SUBSTRATE FABRICATED USING METHOD, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | CHEN, BRET P | 9d overdue |
| 18272078 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 13d |
| 18208389 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY COMPRISING THE SAME | EGGERDING, ALIX ECHELMEYER | 16d |
| 18272084 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 20d |
| 18272083 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 22d |
| 18277075 | METAL THIN-FILM PRECURSOR COMPOSITION, METHOD OF FORMING THIN FILM USING METAL THIN-FILM PRECURSOR COMPOSITION, AND SEMICONDUCTOR SUBSTRATE FABRICATED USING METHOD | STARK, JARRETT J | 42d |
| 18014452 | GROWTH INHIBITOR FOR FORMING THIN FILM, METHOD OF FORMING THIN FILM USING GROWTH INHIBITOR, AND SEMICONDUCTOR SUBSTRATE FABRICATED BY METHOD | HEINCER, LIAM J | 60d |
| 18039206 | OXIDE FILM REACTION SURFACE CONTROL AGENT, METHOD OF FORMING OXIDE FILM USING OXIDE FILM REACTION SURFACE CONTROL AGENT, SEMICONDUCTOR SUBSTRATE INCLUDING OXIDE FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | HOU, FRANK S | — |
| Art Unit | Apps |
|---|---|
| 1749 | 3 |
| 1718 | 1 |
| 1764 | 1 |
| 2898 | 1 |
| 1729 | 1 |
| 1692 | 1 |
| 1767 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18848153 | METHOD OF FORMING THIN FILM, SEMICONDUCTOR SUBSTRATE FABRICATED USING METHOD, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | CHEN, BRET P | 1718 | §103 | Non-Final OA | 9d overdue | Pending | Sep 18, 2024 |
| 18843486 | THIN FILM MODIFICATION COMPOSITION, METHOD OF FORMING THIN FILM USING THIN FILM MODIFICATION COMPOSITION, SEMICONDUCTOR SUBSTRATE INCLUDING THIN FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | ANTHONY, JOSEPH DAVID | 1764 | §103 | Non-Final OA | 69d | Pending | Sep 03, 2024 |
| 18277075 | METAL THIN-FILM PRECURSOR COMPOSITION, METHOD OF FORMING THIN FILM USING METAL THIN-FILM PRECURSOR COMPOSITION, AND SEMICONDUCTOR SUBSTRATE FABRICATED USING METHOD | STARK, JARRETT J | 2898 | §103 | Non-Final OA | 42d | Pending | Sep 15, 2023 |
| 18272084 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 1749 | §103 | Non-Final OA | 20d | Pending | Aug 26, 2023 |
| 18272078 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 1749 | §103 | Non-Final OA | 13d | Pending | Aug 25, 2023 |
| 18272083 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY INCLUDING THE SAME | SCHWARTZ, PHILIP N | 1749 | §103 | Non-Final OA | 22d | Pending | Jul 12, 2023 |
| 18208389 | ELECTROLYTE SOLUTION AND SECONDARY BATTERY COMPRISING THE SAME | EGGERDING, ALIX ECHELMEYER | 1729 | §103 | Non-Final OA | 16d | Pending | Jun 12, 2023 |
| 18039206 | OXIDE FILM REACTION SURFACE CONTROL AGENT, METHOD OF FORMING OXIDE FILM USING OXIDE FILM REACTION SURFACE CONTROL AGENT, SEMICONDUCTOR SUBSTRATE INCLUDING OXIDE FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | HOU, FRANK S | 1692 | §102 | Non-Final OA | — | Pending | May 26, 2023 |
| 18014452 | GROWTH INHIBITOR FOR FORMING THIN FILM, METHOD OF FORMING THIN FILM USING GROWTH INHIBITOR, AND SEMICONDUCTOR SUBSTRATE FABRICATED BY METHOD | HEINCER, LIAM J | 1767 | §102 | Non-Final OA | 60d | Pending | Jan 04, 2023 |
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