Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2897
This examiner grants 96% of resolved cases
Adam S. Bowen serves in Tech Center 2800 and Art Unit 2897. The examiner has a record of 744 resolved cases. These cases result in an allowance rate of 96.5%, which indicates the frequency of grants for applications reaching a final disposition. The median days to allowance is 645, providing a benchmark for the expected duration of the prosecution cycle. Practitioners can use the 96.5% allowance rate to assess the likelihood of a successful outcome when an application is assigned to this examiner.
The data shows an interview lift of 2.4%. This lift suggests that while interviews are a tool for communication, the 96.5% allowance rate is already achieved in the majority of the 744 resolved cases. The 645-day median to allowance reflects the pace of the examination process in Art Unit 2897. Practitioners should consider these metrics when advising clients on the timeline and probability of grant. The consistency seen across 744 resolved cases offers a predictable environment for patent prosecution.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18597930 | DISPLAY DEVICE AND ELECTRONIC APPARATUS | Non-Final OA | SEIKO EPSON CORPORATION |
| 18648577 | METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE AND CORRESPONDING VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE | Non-Final OA | Robert Bosch GmbH |
| 18734746 | CAPACITOR DIE EMBEDDED IN PACKAGE SUBSTRATE FOR PROVIDING CAPACITANCE TO SURFACE MOUNTED DIE | Non-Final OA | Intel Corporation |
| 18654855 | TECHNIQUES FOR ACHIEVING MULTIPLE TRANSISTOR FIN DIMENSIONS ON A SINGLE DIE | Non-Final OA | Intel Corporation |
| 18772382 | CELL PLACEMENT OPTIMIZATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18770367 | SOURCE/DRAIN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18766003 | STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18746930 | SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18741963 | Contact Structures In Semiconductor Devices | Non-Final OA | Taiwan Semiconductor Manufacturing Company, LTD. |
| 18731593 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18673432 | SOURCE/DRAIN EPI STRUCTURE FOR IMPROVING CONTACT QUALITY | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18645481 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18775943 | SEMICONDUCTOR DEVICE AND METHODS OF FORMING | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18774643 | Semiconductor Device with Cut Metal Gate and Method of Manufacture | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18771714 | GATE STRUCTURES IN TRANSISTOR DEVICES AND METHODS OF FORMING SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18766853 | FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18671732 | Contact Structures With Deposited Silicide Layers | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18662374 | DUAL SILICIDE STRUCTURE AND METHODS THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18635641 | ASYMMETRIC EPITAXY REGIONS FOR LANDING CONTACT PLUG | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
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