Technology area: Semiconductors, Circuits & Optics
5 pending office actions • 5 art units • 5 examiners • 0 of 5 (0%) have an AI response strategy ready • 2 patents granted in the last 365 days
Iqe PLC currently maintains 4 pending office actions within the Semiconductors, Circuits & Optics technology area. These matters are distributed across 4 distinct examiners and 1 distinct art unit. This distribution indicates that each active case is being handled by a different individual, though they are concentrated within a single organizational unit.
The busiest examiner for the portfolio is SCHODDE, CHRISTOPHER A, who is responsible for 1 busiest examiner pending office action. While the company has 4 pending office actions in total, this examiner only handles a single case. This suggests that the workload is spread across the various officials identified in the data.
The involvement of the Semiconductors, Circuits & Optics technology area requires the applicant to navigate specific internal policies and examination standards. Each active matter is subject to the focus of its respective examiner. Practitioners must manage the assigned officials, necessitating an approach that accounts for different perspectives across the Semiconductors, Circuits & Optics sector.
Based on the USPTO statutory response window for each pending office action. 1 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 2 (40%) |
| Multi-statute (no §101) | 3 (60%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| SCHODDE, CHRISTOPHER A | 1 | 52.7% | +33.9% |
| WINTERS, SEAN AYERS | 1 | 88.2% | +19.3% |
| CHEN, JACK S J | 1 | 76.7% | +5.6% |
| NELSON, HUNTER JARED | 1 | 38.7% | +24.5% |
| HRNJIC, ADIN | 1 | 66.1% | +9.7% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 1 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18102965 | LAYERED STRUCTURE AND METHOD USING A POROUS LAYER HAVING DIFFERENT POROSITIES | WINTERS, SEAN AYERS | — |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 3 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18226474 | LAYERED STRUCTURE | SCHODDE, CHRISTOPHER A | — |
| 17950670 | Stress Management Layer for GaN HEMT | CHEN, JACK S J | — |
| 17733033 | POROUS RF SWITCH FOR REDUCED CROSSTALK | HRNJIC, ADIN | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 3 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 17875531 | MULTI-WAVELENGTH LIGHT-EMITTING SEMICONDUCTOR DEVICES | NELSON, HUNTER JARED | 65d |
| 18226474 | LAYERED STRUCTURE | SCHODDE, CHRISTOPHER A | — |
| 18102965 | LAYERED STRUCTURE AND METHOD USING A POROUS LAYER HAVING DIFFERENT POROSITIES | WINTERS, SEAN AYERS | — |
| Art Unit | Apps |
|---|---|
| 2898 | 1 |
| 2892 | 1 |
| 2893 | 1 |
| 2828 | 1 |
| 2817 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18226474 | LAYERED STRUCTURE | SCHODDE, CHRISTOPHER A | 2898 | §102§103 | Final Rejection | — | Pending | Jul 26, 2023 |
| 18102965 | LAYERED STRUCTURE AND METHOD USING A POROUS LAYER HAVING DIFFERENT POROSITIES | WINTERS, SEAN AYERS | 2892 | §103 | Non-Final OA | — | Pending | Jan 30, 2023 |
| 17950670 | Stress Management Layer for GaN HEMT | CHEN, JACK S J | 2893 | §102§103§112 | Non-Final OA | — | Pending | Sep 22, 2022 |
| 17875531 | MULTI-WAVELENGTH LIGHT-EMITTING SEMICONDUCTOR DEVICES | NELSON, HUNTER JARED | 2828 | §103 | Non-Final OA | 65d | Pending | Jul 28, 2022 |
| 17733033 | POROUS RF SWITCH FOR REDUCED CROSSTALK | HRNJIC, ADIN | 2817 | §103§112 | Final Rejection | — | Pending | Apr 29, 2022 |
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