Tech Center 2800 • Art Units: 2814 2817 2884 2897
This examiner grants 66% of resolved cases
Adin Hrnjic is an examiner in Art Unit 2814 of Tech Center 2800. With 59 resolved cases, the examiner has an allowance rate of 66.1%. This rate indicates the frequency with which applications are allowed in this art unit. The median days to allowance is 1215, providing a benchmark for the duration of successful prosecution. The 59 resolved cases provide an initial look at the examiner's performance trends.
The interview lift is 9.7%, suggesting a modest benefit from conducting interviews compared to the 66.1% baseline. While the lift is positive, it is not as large as in other art units within the same tech center. The 1215 median days to allowance should be considered when planning prosecution strategy. Practitioners may find that the 66.1% allowance rate is achievable through written arguments, though the 9.7% lift remains an option for resolving specific issues.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18740075 | SEMICONDUCTOR PACKAGE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18528621 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18577227 | DISPLAY PANEL AND DISPLAY APPARATUS | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 17274324 | Display Panel and Manufacture Method Thereof, and Display Apparatus | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18760403 | METHOD OF MANUFACTURING DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18530849 | MICRO-LED DBR FABRICATION BY ELECTROCHEMICAL ETCHING | Final Rejection | Snap Inc. |
| 17869597 | TRANSPARENT DISPLAY DEVICE | Final Rejection | LG Display Co., Ltd. |
| 17561686 | GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAIN STRUCTURES WITH SUBSTRATE CONNECTION PORTIONS | Final Rejection | Intel Corporation |
| 18308386 | HIGH-FREQUENCY GROUP III-NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTORS WITH HIGH-ALUMINUM CONCENTRATION BARRIERS AND RECESSED GATES | Non-Final OA | Wisconsin Alumni Research Foundation |
| 18166361 | SEMICONDUCTOR MODULE WITH INTEGRATED CURRENT SENSOR | Final Rejection | AUDI AG |
| 18577041 | SEMICONDUCTOR DEVICE AND POWER CONVERTER | Non-Final OA | Mitsubishi Electric Corporation |
| 18468279 | DIELECTRIC AND TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL NANOSHEET DEVICES | Final Rejection | International Business Machines Corporation |
| 17493884 | COPPER INTERCONNECTS WITH AN EMBEDDED DIELECTRIC CAP BETWEEN LINES | Final Rejection | International Business Machines Corporation |
| 18404831 | Gate Patterning for Stacked Device Structure | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17302054 | DEEP TRENCH ISOLATION STRUCTURE IN A PIXEL SENSOR | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18441352 | SILICON CHANNEL FOR BONDED 3D NAND DEVICES | Non-Final OA | Applied Materials, Inc. |
| 17727047 | OPTOELECTRONIC SYSTEM AND PHOTODETECTOR FOR OPTOELECTRONIC SYSTEM | Final Rejection | City University of Hong Kong |
| 18611773 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18395760 | MIM CAPACITOR DISPOSED IN MODIFIED DUAL DAMASCENE STRUCTURE AND FABRICATING METHOD OF THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18327331 | CURRENT SENSOR | Final Rejection | Melexis Technologies SA |
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