Prosecution Insights
Last updated: May 29, 2026

Examiner: HRNJIC, ADIN

Tech Center 2800 • Art Units: 2817

This examiner grants 63% of resolved cases

Performance Statistics

63.0%
Allow Rate
-5.0% vs TC avg
97
Total Applications
+11.4%
Interview Lift
1195
Avg Prosecution Days
Based on 54 resolved cases, 2023–2026

Rejection Statute Breakdown

0%
§101 Eligibility
4.4%
§102 Novelty
92.0%
§103 Obviousness
3.6%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
18528621 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Non-Final OA Samsung Electronics Co., Ltd.
17887595 MOVING BLADE CAVITY TECHNOLOGY FOR HIGH DENSE UNITS PER STRIP DESIGN Final Rejection Texas Instruments Incorporated
18530849 MICRO-LED DBR FABRICATION BY ELECTROCHEMICAL ETCHING Non-Final OA Snap Inc.
17741575 FILM, ELEMENT, AND EQUIPMENT Final Rejection CANON KABUSHIKI KAISHA
18468279 DIELECTRIC AND TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL NANOSHEET DEVICES Non-Final OA International Business Machines Corporation
17493884 COPPER INTERCONNECTS WITH AN EMBEDDED DIELECTRIC CAP BETWEEN LINES Non-Final OA International Business Machines Corporation
17561686 GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAIN STRUCTURES WITH SUBSTRATE CONNECTION PORTIONS Non-Final OA Intel Corporation
18364734 DEEP TRENCH ISOLATION STRUCTURE IN A PIXEL SENSOR Non-Final OA Taiwan Semiconductor Manufacturing Company, Ltd.
17874048 CHIP STRUCTURE WITH CONDUCTIVE VIA STRUCTURE Final Rejection Taiwan Semiconductor Manufacturing Company, Ltd.
18346663 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Non-Final OA SK hynix Inc.
18520980 METHOD OF PASSIVATING CLEAVED SEMICONDUCTOR STRUCTURE Non-Final OA Comptek Solutions Oy
18260859 THREE-DIMENSIONAL FLASH MEMORY INCLUDING CHANNEL LAYER HAVING MULTILAYER STRUCTURE, AND METHOD FOR MANUFACTURING SAME Non-Final OA IUCF-HYU (Industry University Cooperation Foundation Hanyang University)
17651651 STRUCTURES WITH DEFORMABLE CONDUCTORS Non-Final OA Liquid Wire Inc.
17616023 METHOD FOR TUNING ELECTRICAL PROPERTIES OF OXIDE SEMICONDUCTORS AND THE DEVELOPMENT OF HIGHLY CONDUCTIVE P-TYPE AND N-TYPE Ga2O3 Non-Final OA Bowling Green State University
18245838 NORMALLY-OFF MESFET DEVICE WITH STACKED GATE CONTACT Final Rejection III-V Technologies GmbH

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