Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1712 1713 1716 2896
This examiner grants 0% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18632562 | PROCESS FOR MANUFACTURING A THREE-DIMENSIONAL STRUCTURE IN BENDING | Non-Final OA | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 18797608 | PATTERN FORMING METHOD AND ARTICLE MANUFACTURING METHOD | Non-Final OA | CANON KABUSHIKI KAISHA |
| 18818146 | METHOD OF FABRICATING DISPLAY DEVICE HAVING PATTERNED LITHIUM-BASED TRANSITION METAL OXIDE | Non-Final OA | Magic Leap, Inc. |
| 18475701 | METHOD FOR MANUFACTURING VIBRATOR | Non-Final OA | SEIKO EPSON CORPORATION |
| 18625916 | PATTERNING METHODS, SEMICONDUCTOR STRUCTURES AND MEMORY | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18938878 | POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND MANUFACTURING METHOD OF SUBSTRATE USING THE SAME | Non-Final OA | SK HYNIX INC. |
| 18671417 | CRYOGENIC ETCHING OF SILICON-CONTAINING MATERIALS | Non-Final OA | Applied Materials, Inc. |
| 18593014 | SELECTIVE ETCHING OF ALTERNATING LAYERS OF SILICON OXIDE AND SILICON NITRIDE FOR HIGH ASPECT RATIO CONTACTS | Final Rejection | Applied Materials, Inc. |
| 18442681 | SYSTEMS AND METHODS FOR NANOHOLE WET CLEANS | Non-Final OA | Applied Materials, Inc. |
| 18484379 | MICROWAVE HIGH-DENSITY PLASMA FOR SELECTIVE ETCH | Final Rejection | Applied Materials, Inc. |
| 18588275 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, FILM THICKNESS MEASUREMENT METHOD, AND TEMPERATURE MEASUREMENT METHOD | Non-Final OA | Kioxia Corporation |
| 18914968 | METHODS FOR CONDITIONING A SURFACE PRIOR TO ETCHING TO OPTIMIZE ETCH PERFORMANCE | Non-Final OA | Tokyo Electron Limited |
| 18547888 | FILM FORMING METHOD, PROCESSING APPARATUS, AND PROCESSING SYSTEM | Non-Final OA | Tokyo Electron Limited |
| 18755712 | METHOD FOR PLANARIZING SURFACE OF SEMICONDUCTOR DEVICE | Non-Final OA | UNITED MICROELECTRONICS CORP. |
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