Prosecution Insights
Prosecution Insights
Tech Center 3700 • Art Units: 1712 1713 1716 1794 2828 2896 3799
This examiner grants 100% of resolved cases
Jonathan Langdon Carter is an examiner in Art Unit 1712 within Tech Center 3700. He has a history with 3 resolved cases. Across these files, he maintains an allowance rate of 100.0 percent. While this percentage is high, the sample size of 3 cases means that practitioners should view this as an emerging trend. The data suggests an initially favorable environment for applicants.
The interview lift for this examiner is 0.0 percent. This figure indicates that, in the 3 cases resolved so far, interviews have not altered the probability of reaching an allowance. Given that the baseline allowance rate is already 100.0 percent, there has been no statistical room for an interview to provide a lift. Practitioners may find that written prosecution is sufficient to reach a grant based on this dataset.
The median days to allowance for these cases is 976. This timeline provides an early indication of the pendency an applicant might expect when assigned to this examiner. A duration of 976 days is a specific benchmark for this art unit. As more cases are resolved beyond the initial 3, this median and the 100.0 percent allowance rate will likely evolve to reflect a broader range of prosecution scenarios.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18475701 | METHOD FOR MANUFACTURING VIBRATOR | Non-Final OA | SEIKO EPSON CORPORATION |
| 18739193 | DEPOSITION MASK AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18632562 | PROCESS FOR MANUFACTURING A THREE-DIMENSIONAL STRUCTURE IN BENDING | Non-Final OA | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 18797608 | PATTERN FORMING METHOD AND ARTICLE MANUFACTURING METHOD | Non-Final OA | CANON KABUSHIKI KAISHA |
| 18818146 | METHOD OF FABRICATING DISPLAY DEVICE HAVING PATTERNED LITHIUM-BASED TRANSITION METAL OXIDE | Non-Final OA | Magic Leap, Inc. |
| 18938878 | POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND MANUFACTURING METHOD OF SUBSTRATE USING THE SAME | Non-Final OA | SK HYNIX INC. |
| 18725503 | HIGH SELECTIVITY AND UNIFORM DIELECTRIC ETCH | Non-Final OA | Lam Research Corporation |
| 18671417 | CRYOGENIC ETCHING OF SILICON-CONTAINING MATERIALS | Non-Final OA | Applied Materials, Inc. |
| 18442681 | SYSTEMS AND METHODS FOR NANOHOLE WET CLEANS | Non-Final OA | Applied Materials, Inc. |
| 18788530 | COPPER-LAYER ETCHING METHOD AND SUBSTRATE PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18734683 | METHOD FOR ETCHING A METAL HARD MASK | Non-Final OA | Tokyo Electron Limited |
| 18659733 | CLEANING LIQUID FOR REMOVING CERIUM COMPOUND, CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER | Non-Final OA | MITSUBISHI CHEMICAL CORPORATION |
| 18160700 | Surface Treatment Of Quantum Dots | Non-Final OA | The Trustees of Columbia University in the city of New York |
| 18818832 | MOLYBDENUM CHEMICAL MECHANICAL POLISHING COMPOUNDS AND METHODS OF USE THEREOF | Non-Final OA | FUJIMI INCORPORATED |
| 18696798 | POLISHING COMPOSITION | Final Rejection | FUJIMI INCORPORATED |
| 18589690 | SILICON OXYNITRIDE REMOVAL ENHANCERS AND METHODS OF USE THEREOF | Final Rejection | FUJIMI INCORPORATED |
| 18949532 | Patterning Process | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18938313 | SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING | Non-Final OA | KCTECH CO., LTD. |
| 18538919 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT SYSTEM | Non-Final OA | SEMES CO., LTD. |
| 18906945 | Method for Thinning a Semiconductor Substrate | Non-Final OA | IMEC VZW |
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