Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2800 2812
This examiner grants 94% of resolved cases
Scott B. Geyer, working in Tech Center 2800 and Art Unit 2800, demonstrates an allowance rate of 94.2% over 727 resolved cases. The median days to allowance is 693, which represents the typical timeline for successful applications. This 693-day figure and the 94.2% allowance rate indicate a very efficient path to patent issuance. Practitioners should use these metrics to plan their prosecution strategy in this art unit.
The interview lift is 4.2%, a figure that is small relative to the 94.2% allowance rate. With such a high baseline for success, interviews may only be necessary for the most complex cases among the 727 resolved cases. The 4.2% lift suggests that written prosecution is often sufficient to reach an allowance. The 693-day median pendency confirms that this examiner provides a streamlined route to grant, and the 94.2% rate reflects a high probability of success.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18811512 | PASSIVE COMPONENT EMBEDDED SUBSTRATE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18662107 | CAPACITOR, SEMICONDUCTOR DEVICE COMPRISING THE CAPACITOR, AND METHOD OF FABRICATING THE CAPACITOR | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18422471 | SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18762478 | PACKAGE FORMATION METHODS INCLUDING COUPLING A MOLDED ROUTING LAYER TO AN INTEGRATED ROUTING LAYER | Non-Final OA | Intel Corporation |
| 18061181 | INTEGRATED CIRCUIT PACKAGE ARCHITECTURES WITH CORE AND/OR BUILD-UP LAYERS COMPRISING SPIN-ON GLASS (SOG) | Final Rejection | Intel Corporation |
| 18566939 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC EQUIPMENT | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18409105 | SELF ASSEMBLED MONOLAYER FORMED ON A QUANTUM DEVICE | Non-Final OA | International Business Machines Corporation |
| 18788031 | MULTI-GATE SEMICONDUCTOR DEVICE WITH INNER SPACER AND FABRICATION METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18784645 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18644209 | CHIP PACKAGE STRUCTURE WITH LID AND METHOD FOR FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18783807 | 3DIC WITH GAP-FILL STRUCTURES AND THE METHOD OF MANUFACTURING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18594540 | Solid Electrolytic Capacitor with Improved ESR and Leakage | Non-Final OA | KEMET Electronics Corporation |
| 18747476 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | UNITED MICROELECTRONICS CORP. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy