Tech Center 2800 • Art Units: 2829 2893
This examiner grants 92% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18360128 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18226990 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18008064 | TRANSFER PROCESS TO REALIZE SEMICONDUCTOR DEVICES | Non-Final OA | The Regents of the University of California |
| 18458848 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME | Non-Final OA | LG Display Co., Ltd. |
| 18068886 | TRANSPARENT TOUCH DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 18166391 | HYBRID GATE FIELD EFFECT TRANSISTOR, METHOD FOR PREPARING HYBRID GATE FIELD EFFECT TRANSISTOR, AND SWITCH CIRCUIT | Non-Final OA | Huawei Technologies Co., Ltd. |
| 17783088 | MEMORY DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 17264503 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | Semiconductor Energy Laboratory Co., Ltd. |
| 17897876 | SKIP VIA WITH LOCALIZED SPACER | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18179519 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18458087 | SEMICONDUCTOR DEVICE | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 17891671 | SEMICONDUCTOR DEVICE | Final Rejection | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 18655990 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 18347858 | MULTI-TIER MEMORY DEVICE WITH DIFFERENT WIDTH CENTRAL STAIRCASE REGIONS IN DIFFERENT VERTICAL TIERS AND METHODS FOR FORMING THE SAME | Non-Final OA | SANDISK TECHNOLOGIES LLC |
| 18379871 | SEMICONDUCTOR STRUCTURE INCLUDING MULTIPLE GATE ELECTRODES AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18066159 | STRUCTURE WITH CONDUCTIVE FEATURE FOR DIRECT BONDING AND METHOD OF FORMING SAME | Non-Final OA | ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC. |
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